JP6956288B2 - 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 - Google Patents

基板処理方法、プラズマ処理装置、及びエッチングガス組成物 Download PDF

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JP6956288B2
JP6956288B2 JP2021046015A JP2021046015A JP6956288B2 JP 6956288 B2 JP6956288 B2 JP 6956288B2 JP 2021046015 A JP2021046015 A JP 2021046015A JP 2021046015 A JP2021046015 A JP 2021046015A JP 6956288 B2 JP6956288 B2 JP 6956288B2
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gas
film
substrate
group
plasma
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JP2021174985A (ja
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隆太郎 須田
幕樹 戸村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority claimed from US17/092,376 external-priority patent/US11342194B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW110110808A priority Critical patent/TW202209474A/zh
Priority to SG10202103960VA priority patent/SG10202103960VA/en
Priority to EP21169517.6A priority patent/EP3905307B1/en
Priority to KR1020210051545A priority patent/KR102459129B1/ko
Priority to CN202110435309.3A priority patent/CN113594032A/zh
Priority to US17/244,957 priority patent/US20210343539A1/en
Priority to JP2021163469A priority patent/JP2022002337A/ja
Publication of JP2021174985A publication Critical patent/JP2021174985A/ja
Publication of JP6956288B2 publication Critical patent/JP6956288B2/ja
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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  • Engineering & Computer Science (AREA)
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  • Plasma & Fusion (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
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  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
JP2021046015A 2020-04-30 2021-03-19 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 Active JP6956288B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
TW110110808A TW202209474A (zh) 2020-04-30 2021-03-25 基板處理方法及電漿處理裝置
SG10202103960VA SG10202103960VA (en) 2020-04-30 2021-04-19 Substrate processing method and plasma processing apparatus
EP21169517.6A EP3905307B1 (en) 2020-04-30 2021-04-20 Substrate processing method and plasma processing apparatus
KR1020210051545A KR102459129B1 (ko) 2020-04-30 2021-04-21 기판 처리 방법 및 플라즈마 처리 장치
CN202110435309.3A CN113594032A (zh) 2020-04-30 2021-04-22 基板处理方法及等离子体处理装置
US17/244,957 US20210343539A1 (en) 2020-04-30 2021-04-30 Substrate processing method and plasma processing apparatus
JP2021163469A JP2022002337A (ja) 2020-04-30 2021-10-04 基板処理方法及びプラズマ処理装置
KR1020220136180A KR20220150845A (ko) 2020-04-30 2022-10-21 기판 처리 방법 및 플라즈마 처리 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063017998P 2020-04-30 2020-04-30
US63/017,998 2020-04-30
US17/092,376 US11342194B2 (en) 2019-11-25 2020-11-09 Substrate processing method and substrate processing apparatus
US17/092,376 2020-11-09

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JP2021163469A Division JP2022002337A (ja) 2020-04-30 2021-10-04 基板処理方法及びプラズマ処理装置

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JP6956288B2 true JP6956288B2 (ja) 2021-11-02

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Publication number Priority date Publication date Assignee Title
JP7348672B2 (ja) * 2021-12-03 2023-09-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
WO2023162161A1 (ja) * 2022-02-25 2023-08-31 東京エレクトロン株式会社 温調システム、温調方法、基板処理方法及び基板処理装置
WO2024043166A1 (ja) * 2022-08-22 2024-02-29 東京エレクトロン株式会社 プラズマ処理装置及び基板処理システム

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JPS6066823A (ja) 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd 半導体エッチング方法
JPH06168914A (ja) * 1992-05-13 1994-06-14 Tokyo Electron Ltd エッチング処理方法
JP3704965B2 (ja) 1998-08-12 2005-10-12 セイコーエプソン株式会社 ドライエッチング方法及び装置
US6401728B2 (en) * 1999-03-01 2002-06-11 United Microelectronics Corp. Method for cleaning interior of etching chamber
WO2009044681A1 (ja) * 2007-10-05 2009-04-09 Sekisui Chemical Co., Ltd. シリコンのエッチング方法
KR101134909B1 (ko) * 2010-05-06 2012-04-17 주식회사 테스 실리콘 산화막의 건식 식각 방법
KR102182234B1 (ko) * 2012-07-31 2020-11-24 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법
JP2015073035A (ja) * 2013-10-03 2015-04-16 東京エレクトロン株式会社 エッチング方法
JP6788177B2 (ja) * 2015-05-14 2020-11-25 セントラル硝子株式会社 ドライエッチング方法、ドライエッチング剤及び半導体装置の製造方法
US9831097B2 (en) * 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US10892143B2 (en) * 2016-10-21 2021-01-12 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
KR20240037371A (ko) * 2018-03-16 2024-03-21 램 리써치 코포레이션 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
KR20210114509A (ko) * 2019-01-23 2021-09-23 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭 방법, 드라이 에칭제, 및 그 보존 용기

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US20210343539A1 (en) 2021-11-04
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