JP6951298B2 - 荷電粒子ビームに光ビームをアライメントするための方法 - Google Patents
荷電粒子ビームに光ビームをアライメントするための方法 Download PDFInfo
- Publication number
- JP6951298B2 JP6951298B2 JP2018130626A JP2018130626A JP6951298B2 JP 6951298 B2 JP6951298 B2 JP 6951298B2 JP 2018130626 A JP2018130626 A JP 2018130626A JP 2018130626 A JP2018130626 A JP 2018130626A JP 6951298 B2 JP6951298 B2 JP 6951298B2
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- Prior art keywords
- calibration surface
- light
- sample
- charged particle
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
- H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762530829P | 2017-07-10 | 2017-07-10 | |
| US62/530,829 | 2017-07-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019016600A JP2019016600A (ja) | 2019-01-31 |
| JP2019016600A5 JP2019016600A5 (enExample) | 2021-07-26 |
| JP6951298B2 true JP6951298B2 (ja) | 2021-10-20 |
Family
ID=62909418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018130626A Active JP6951298B2 (ja) | 2017-07-10 | 2018-07-10 | 荷電粒子ビームに光ビームをアライメントするための方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10777383B2 (enExample) |
| EP (1) | EP3428950B1 (enExample) |
| JP (1) | JP6951298B2 (enExample) |
| KR (1) | KR102410589B1 (enExample) |
| CN (1) | CN109243953B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10896802B2 (en) * | 2017-12-27 | 2021-01-19 | Fei Company | Combined SEM-CL and FIB-IOE microscopy |
| KR102456983B1 (ko) * | 2018-09-11 | 2022-10-21 | 주식회사 히타치하이테크 | 전자선 장치 |
| DE102019203493A1 (de) * | 2019-03-14 | 2020-09-17 | BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH | Verfahren zur ultrahochaufgelösten Modifikation, insbesondere zur physischen Materialabtragung oder internen Materialänderung, eines Werkstücks |
| CN110346400A (zh) * | 2019-06-18 | 2019-10-18 | 北京科技大学 | 一种模拟火炮烧蚀的试验装置及方法 |
| TWI845751B (zh) | 2019-08-30 | 2024-06-21 | 荷蘭商Asml荷蘭公司 | 帶電粒子束系統及成像方法 |
| JP7148467B2 (ja) * | 2019-08-30 | 2022-10-05 | 株式会社日立ハイテク | 荷電粒子線装置 |
| JP7308710B2 (ja) * | 2019-09-25 | 2023-07-14 | 株式会社日立ハイテクサイエンス | 集束イオンビーム装置 |
| US11257657B2 (en) * | 2020-02-18 | 2022-02-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device with interferometer for height measurement |
| DE102020115869A1 (de) * | 2020-06-16 | 2021-12-16 | RUHR-UNIVERSITäT BOCHUM | Herstellung eines Objekts mittels Zwei-Photonen-Polymerisation |
| CN113964006B (zh) * | 2020-07-21 | 2023-09-12 | 聚束科技(北京)有限公司 | 一种粒子束装置束斑追踪方法及系统 |
| TWI727869B (zh) * | 2020-07-27 | 2021-05-11 | 聚威科技股份有限公司 | 光學顯微鏡之雷射加工之能量動態調整方法與光斑大小動態調整方法 |
| KR20230118110A (ko) * | 2020-12-16 | 2023-08-10 | 에이에스엠엘 네델란즈 비.브이. | Acc 모듈에 의한 하전 입자 시스템의 열-지원 검사 |
| CN114047657B (zh) * | 2021-12-13 | 2025-05-23 | 国开启科量子技术(北京)有限公司 | 一种粒子的照亮装置 |
| CN113984821B (zh) * | 2021-12-29 | 2022-03-11 | 中国科学院地质与地球物理研究所 | 纳米结构三维成像系统与方法 |
| US12165832B2 (en) * | 2021-12-31 | 2024-12-10 | Fei Company | Systems and methods for performing sample lift-out for highly reactive materials |
| WO2023187876A1 (ja) * | 2022-03-28 | 2023-10-05 | 株式会社日立ハイテク | 荷電粒子線装置の調整方法及び荷電粒子線装置 |
| CN115128788B (zh) * | 2022-05-30 | 2023-11-28 | 中国人民解放军国防科技大学 | 与观测物平行的水平放置显微装置 |
| CN115083869B (zh) * | 2022-06-06 | 2025-09-26 | 惠然科技有限公司 | 机械对中装置及电子显微镜 |
| US12237142B2 (en) * | 2022-06-16 | 2025-02-25 | Fei Company | Methods for determining the virtual source location of a liquid metal ion source |
| US11658001B1 (en) * | 2022-12-07 | 2023-05-23 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Ion beam cutting calibration system and method |
| KR102850108B1 (ko) | 2023-11-01 | 2025-08-28 | 씨아이에스(주) | 유센트릭 스테이지용 클램핑장치 |
| KR102850109B1 (ko) | 2023-11-01 | 2025-08-28 | 씨아이에스(주) | 유센트릭 스테이지 |
| CN118039438B (zh) * | 2024-02-23 | 2024-09-20 | 深圳市鹏芯微集成电路制造有限公司 | 离子注入机的校准设备及校准方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0815064B2 (ja) * | 1987-11-25 | 1996-02-14 | 株式会社日立製作所 | 集束エネルギービーム加工装置および加工方法 |
| JPH10312768A (ja) * | 1997-05-15 | 1998-11-24 | Hitachi Ltd | 集束イオンビーム装置 |
| US6627903B1 (en) * | 2000-09-11 | 2003-09-30 | Nikon Corporation | Methods and devices for calibrating a charged-particle-beam microlithography apparatus, and microelectronic-device fabrication methods comprising same |
| JP2003016988A (ja) * | 2001-06-27 | 2003-01-17 | Fujitsu Ltd | フォーカストイオンビーム装置及びそれを利用したフォーカストイオンビーム加工方法 |
| US6855622B2 (en) | 2002-05-30 | 2005-02-15 | Nptest, Llc | Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam |
| WO2010052854A1 (ja) * | 2008-11-05 | 2010-05-14 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| DE102009015341A1 (de) | 2009-03-27 | 2010-10-07 | Carl Zeiss Ag | Verfahren und Vorrichtungen zur optischen Untersuchung von Proben |
| KR101854287B1 (ko) | 2010-04-07 | 2018-05-03 | 에프이아이 컴파니 | 레이저 및 하전 입자 빔 시스템 결합 |
| EP2601477B1 (en) * | 2010-08-02 | 2021-09-22 | Oxford Instruments America, Inc. | Method for acquiring simultaneous and overlapping optical and charged particle beam images |
| US8766213B2 (en) * | 2012-09-07 | 2014-07-01 | Fei Company | Automated method for coincident alignment of a laser beam and a charged particle beam |
| US9991090B2 (en) * | 2012-11-15 | 2018-06-05 | Fei Company | Dual laser beam system used with an electron microscope and FIB |
| JP6232195B2 (ja) | 2013-03-21 | 2017-11-15 | 株式会社荏原製作所 | 試料検査装置及び試料の検査方法 |
-
2018
- 2018-07-06 US US16/028,622 patent/US10777383B2/en active Active
- 2018-07-09 KR KR1020180079528A patent/KR102410589B1/ko active Active
- 2018-07-09 CN CN201810744936.3A patent/CN109243953B/zh active Active
- 2018-07-10 EP EP18182609.0A patent/EP3428950B1/en active Active
- 2018-07-10 JP JP2018130626A patent/JP6951298B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3428950A1 (en) | 2019-01-16 |
| US10777383B2 (en) | 2020-09-15 |
| KR20190006453A (ko) | 2019-01-18 |
| EP3428950B1 (en) | 2021-09-22 |
| JP2019016600A (ja) | 2019-01-31 |
| US20190013178A1 (en) | 2019-01-10 |
| CN109243953B (zh) | 2023-04-18 |
| CN109243953A (zh) | 2019-01-18 |
| KR102410589B1 (ko) | 2022-06-17 |
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