KR102410589B1 - 하전 입자 빔에 대한 광 빔의 정렬 방법 - Google Patents

하전 입자 빔에 대한 광 빔의 정렬 방법 Download PDF

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KR102410589B1
KR102410589B1 KR1020180079528A KR20180079528A KR102410589B1 KR 102410589 B1 KR102410589 B1 KR 102410589B1 KR 1020180079528 A KR1020180079528 A KR 1020180079528A KR 20180079528 A KR20180079528 A KR 20180079528A KR 102410589 B1 KR102410589 B1 KR 102410589B1
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South Korea
Prior art keywords
calibration surface
light
sample
laser
charged particle
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Korean (ko)
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KR20190006453A (ko
Inventor
카메론 제임스 자크르슨
돌프 팀메르만
밀로스 토쓰
조지 필레비치
스티븐 랜돌프
아우렐리엔 필립 진 마클로우 보트맨
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에프이아이 컴파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020180079528A 2017-07-10 2018-07-09 하전 입자 빔에 대한 광 빔의 정렬 방법 Active KR102410589B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762530829P 2017-07-10 2017-07-10
US62/530,829 2017-07-10

Publications (2)

Publication Number Publication Date
KR20190006453A KR20190006453A (ko) 2019-01-18
KR102410589B1 true KR102410589B1 (ko) 2022-06-17

Family

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KR1020180079528A Active KR102410589B1 (ko) 2017-07-10 2018-07-09 하전 입자 빔에 대한 광 빔의 정렬 방법

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Country Link
US (1) US10777383B2 (enExample)
EP (1) EP3428950B1 (enExample)
JP (1) JP6951298B2 (enExample)
KR (1) KR102410589B1 (enExample)
CN (1) CN109243953B (enExample)

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US10896802B2 (en) * 2017-12-27 2021-01-19 Fei Company Combined SEM-CL and FIB-IOE microscopy
KR102456983B1 (ko) * 2018-09-11 2022-10-21 주식회사 히타치하이테크 전자선 장치
DE102019203493A1 (de) * 2019-03-14 2020-09-17 BLZ Bayerisches Laserzentrum Gemeinnützige Forschungsgesellschaft mbH Verfahren zur ultrahochaufgelösten Modifikation, insbesondere zur physischen Materialabtragung oder internen Materialänderung, eines Werkstücks
CN110346400A (zh) * 2019-06-18 2019-10-18 北京科技大学 一种模拟火炮烧蚀的试验装置及方法
TWI845751B (zh) 2019-08-30 2024-06-21 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子束系統及成像方法
JP7148467B2 (ja) * 2019-08-30 2022-10-05 株式会社日立ハイテク 荷電粒子線装置
JP7308710B2 (ja) * 2019-09-25 2023-07-14 株式会社日立ハイテクサイエンス 集束イオンビーム装置
US11257657B2 (en) * 2020-02-18 2022-02-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with interferometer for height measurement
DE102020115869A1 (de) * 2020-06-16 2021-12-16 RUHR-UNIVERSITäT BOCHUM Herstellung eines Objekts mittels Zwei-Photonen-Polymerisation
CN113964006B (zh) * 2020-07-21 2023-09-12 聚束科技（北京）有限公司 一种粒子束装置束斑追踪方法及系统
TWI727869B (zh) * 2020-07-27 2021-05-11 聚威科技股份有限公司 光學顯微鏡之雷射加工之能量動態調整方法與光斑大小動態調整方法
KR20230118110A (ko) * 2020-12-16 2023-08-10 에이에스엠엘 네델란즈 비.브이. Acc 모듈에 의한 하전 입자 시스템의 열-지원 검사
CN114047657B (zh) * 2021-12-13 2025-05-23 国开启科量子技术(北京)有限公司 一种粒子的照亮装置
CN113984821B (zh) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 纳米结构三维成像系统与方法
US12165832B2 (en) * 2021-12-31 2024-12-10 Fei Company Systems and methods for performing sample lift-out for highly reactive materials
WO2023187876A1 (ja) * 2022-03-28 2023-10-05 株式会社日立ハイテク 荷電粒子線装置の調整方法及び荷電粒子線装置
CN115128788B (zh) * 2022-05-30 2023-11-28 中国人民解放军国防科技大学 与观测物平行的水平放置显微装置
CN115083869B (zh) * 2022-06-06 2025-09-26 惠然科技有限公司 机械对中装置及电子显微镜
US12237142B2 (en) * 2022-06-16 2025-02-25 Fei Company Methods for determining the virtual source location of a liquid metal ion source
US11658001B1 (en) * 2022-12-07 2023-05-23 Institute Of Geology And Geophysics, Chinese Academy Of Sciences Ion beam cutting calibration system and method
KR102850108B1 (ko) 2023-11-01 2025-08-28 씨아이에스(주) 유센트릭 스테이지용 클램핑장치
KR102850109B1 (ko) 2023-11-01 2025-08-28 씨아이에스(주) 유센트릭 스테이지
CN118039438B (zh) * 2024-02-23 2024-09-20 深圳市鹏芯微集成电路制造有限公司 离子注入机的校准设备及校准方法

Citations (3)

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DE102009015341A1 (de) 2009-03-27 2010-10-07 Carl Zeiss Ag Verfahren und Vorrichtungen zur optischen Untersuchung von Proben
JP2013524466A (ja) 2010-04-07 2013-06-17 エフ・イ−・アイ・カンパニー 組合せレーザおよび荷電粒子ビーム・システム
JP2014182984A (ja) 2013-03-21 2014-09-29 Ebara Corp 試料検査装置及び試料の検査方法

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JPH0815064B2 (ja) * 1987-11-25 1996-02-14 株式会社日立製作所 集束エネルギービーム加工装置および加工方法
JPH10312768A (ja) * 1997-05-15 1998-11-24 Hitachi Ltd 集束イオンビーム装置
US6627903B1 (en) * 2000-09-11 2003-09-30 Nikon Corporation Methods and devices for calibrating a charged-particle-beam microlithography apparatus, and microelectronic-device fabrication methods comprising same
JP2003016988A (ja) * 2001-06-27 2003-01-17 Fujitsu Ltd フォーカストイオンビーム装置及びそれを利用したフォーカストイオンビーム加工方法
US6855622B2 (en) 2002-05-30 2005-02-15 Nptest, Llc Method and apparatus for forming a cavity in a semiconductor substrate using a charged particle beam
WO2010052854A1 (ja) * 2008-11-05 2010-05-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置
EP2601477B1 (en) * 2010-08-02 2021-09-22 Oxford Instruments America, Inc. Method for acquiring simultaneous and overlapping optical and charged particle beam images
US8766213B2 (en) * 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9991090B2 (en) * 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
DE102009015341A1 (de) 2009-03-27 2010-10-07 Carl Zeiss Ag Verfahren und Vorrichtungen zur optischen Untersuchung von Proben
JP2013524466A (ja) 2010-04-07 2013-06-17 エフ・イ−・アイ・カンパニー 組合せレーザおよび荷電粒子ビーム・システム
JP2014182984A (ja) 2013-03-21 2014-09-29 Ebara Corp 試料検査装置及び試料の検査方法

Also Published As

Publication number Publication date
EP3428950A1 (en) 2019-01-16
US10777383B2 (en) 2020-09-15
JP6951298B2 (ja) 2021-10-20
KR20190006453A (ko) 2019-01-18
EP3428950B1 (en) 2021-09-22
JP2019016600A (ja) 2019-01-31
US20190013178A1 (en) 2019-01-10
CN109243953B (zh) 2023-04-18
CN109243953A (zh) 2019-01-18

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