JP2013257317A5 - - Google Patents
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- JP2013257317A5 JP2013257317A5 JP2013109593A JP2013109593A JP2013257317A5 JP 2013257317 A5 JP2013257317 A5 JP 2013257317A5 JP 2013109593 A JP2013109593 A JP 2013109593A JP 2013109593 A JP2013109593 A JP 2013109593A JP 2013257317 A5 JP2013257317 A5 JP 2013257317A5
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- JP
- Japan
- Prior art keywords
- substrate
- milling
- angle
- axis
- cuts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims description 152
- 238000003801 milling Methods 0.000 claims description 82
- 238000010884 ion-beam technique Methods 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 73
- 239000002245 particle Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 33
- 238000010894 electron beam technology Methods 0.000 claims description 28
- 238000003384 imaging method Methods 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000010408 sweeping Methods 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 3
- 239000000523 sample Substances 0.000 description 94
- 230000008569 process Effects 0.000 description 24
- 150000002500 ions Chemical class 0.000 description 14
- 238000004458 analytical method Methods 0.000 description 12
- 230000009977 dual effect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005498 polishing Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/493,735 | 2012-06-11 | ||
| US13/493,735 US9733164B2 (en) | 2012-06-11 | 2012-06-11 | Lamella creation method and device using fixed-angle beam and rotating sample stage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013257317A JP2013257317A (ja) | 2013-12-26 |
| JP2013257317A5 true JP2013257317A5 (enExample) | 2016-09-29 |
Family
ID=48740820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013109593A Pending JP2013257317A (ja) | 2012-06-11 | 2013-05-24 | 角度が固定されたビームと回転する試料ステージとを使用する薄片製作方法および装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9733164B2 (enExample) |
| EP (1) | EP2674742A3 (enExample) |
| JP (1) | JP2013257317A (enExample) |
| CN (1) | CN103512781A (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013082496A1 (en) | 2011-12-01 | 2013-06-06 | Fei Company | High throughput tem preparation processes and hardware for backside thinning of cross-sectional view lamella |
| JP6062628B2 (ja) * | 2011-12-08 | 2017-01-18 | 株式会社日立ハイテクサイエンス | 薄膜試料作製装置及び方法 |
| US10110854B2 (en) * | 2012-07-27 | 2018-10-23 | Gatan, Inc. | Ion beam sample preparation apparatus and methods |
| CN104822482B (zh) | 2012-10-05 | 2017-12-05 | Fei 公司 | 用于倾斜铣削保护的体沉积 |
| CN104685348B (zh) | 2012-10-05 | 2017-12-12 | Fei 公司 | 高纵横比结构分析 |
| KR102144555B1 (ko) | 2012-10-05 | 2020-08-13 | 에프이아이 컴파니 | 하전 입자 빔 샘플 준비과정에서 커트닝을 감소하기 위한 방법 및 시스템 |
| EP2755226B1 (en) * | 2013-01-15 | 2016-06-29 | Fei Company | Sample carrier for an electron microscope |
| US9821486B2 (en) | 2013-10-30 | 2017-11-21 | Fei Company | Integrated lamellae extraction station |
| US9449785B2 (en) | 2013-11-11 | 2016-09-20 | Howard Hughes Medical Institute | Workpiece transport and positioning apparatus |
| EP2916342A1 (en) | 2014-03-05 | 2015-09-09 | Fei Company | Fabrication of a lamella for correlative atomic-resolution tomographic analyses |
| CN103868773A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 透射电镜样品的制作方法 |
| EP2924710A1 (en) * | 2014-03-25 | 2015-09-30 | Fei Company | Imaging a sample with multiple beams and a single detector |
| US9947507B2 (en) * | 2015-07-09 | 2018-04-17 | Carl Zeiss Microscopy Gmbh | Method for preparing cross-sections by ion beam milling |
| EP3318862B1 (en) * | 2016-11-04 | 2019-08-21 | FEI Company | Tomography sample preparation systems and methods with improved speed, automation, and reliability |
| US10546719B2 (en) | 2017-06-02 | 2020-01-28 | Fei Company | Face-on, gas-assisted etching for plan-view lamellae preparation |
| EP3432338B1 (en) * | 2017-07-20 | 2019-10-23 | FEI Company | Specimen preparation and inspection in a dual-beam charged particle microscope |
| CZ309855B6 (cs) * | 2017-09-20 | 2023-12-20 | Tescan Group, A.S. | Zařízení s iontovým tubusem a rastrovacím elektronovým mikroskopem |
| CN112912988B (zh) * | 2018-10-23 | 2024-12-17 | 应用材料公司 | 用于大面积基板的聚焦离子束系统 |
| US11158487B2 (en) * | 2019-03-29 | 2021-10-26 | Fei Company | Diagonal compound mill |
| DE102021201686A1 (de) * | 2020-11-17 | 2022-05-19 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe |
| CN112730006B (zh) * | 2021-02-05 | 2022-11-29 | 上海市计量测试技术研究院 | 一种孔面离子通道衬度试样的制备方法 |
| CN113984821B (zh) * | 2021-12-29 | 2022-03-11 | 中国科学院地质与地球物理研究所 | 纳米结构三维成像系统与方法 |
| US11784025B1 (en) | 2022-05-10 | 2023-10-10 | Plasma-Therm Nes Llc | Integral sweep in ion beam system |
| US11658001B1 (en) * | 2022-12-07 | 2023-05-23 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Ion beam cutting calibration system and method |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6039000A (en) | 1998-02-11 | 2000-03-21 | Micrion Corporation | Focused particle beam systems and methods using a tilt column |
| US7094312B2 (en) * | 1999-07-22 | 2006-08-22 | Fsi Company | Focused particle beam systems and methods using a tilt column |
| DE60144508D1 (de) | 2000-11-06 | 2011-06-09 | Hitachi Ltd | Verfahren zur Herstellung von Proben |
| JP4283432B2 (ja) * | 2000-11-06 | 2009-06-24 | 株式会社日立製作所 | 試料作製装置 |
| EP1388883B1 (en) | 2002-08-07 | 2013-06-05 | Fei Company | Coaxial FIB-SEM column |
| US7009187B2 (en) | 2002-08-08 | 2006-03-07 | Fei Company | Particle detector suitable for detecting ions and electrons |
| US7504182B2 (en) | 2002-09-18 | 2009-03-17 | Fei Company | Photolithography mask repair |
| US7002152B2 (en) | 2003-02-15 | 2006-02-21 | Bal-Tec Ag | Sample preparation for transmission electron microscopy |
| JP3887356B2 (ja) | 2003-07-08 | 2007-02-28 | エスアイアイ・ナノテクノロジー株式会社 | 薄片試料作製方法 |
| JP5099291B2 (ja) * | 2006-02-14 | 2012-12-19 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム装置及び試料の断面加工・観察方法 |
| EP2041756B1 (en) | 2006-07-14 | 2015-05-13 | FEI Company | A multi-source plasma focused ion beam system |
| US8835880B2 (en) | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
| EP2009421A1 (en) | 2007-06-29 | 2008-12-31 | FEI Company | Method for separating a lamella for TEM inspection from a core sample |
| EP2009420A1 (en) * | 2007-06-29 | 2008-12-31 | FEI Company | Method for attaching a sample to a manipulator |
| WO2009089499A2 (en) | 2008-01-09 | 2009-07-16 | Fei Company | Multibeam system |
| US10493559B2 (en) | 2008-07-09 | 2019-12-03 | Fei Company | Method and apparatus for laser machining |
| US8278220B2 (en) | 2008-08-08 | 2012-10-02 | Fei Company | Method to direct pattern metals on a substrate |
| US8168961B2 (en) | 2008-11-26 | 2012-05-01 | Fei Company | Charged particle beam masking for laser ablation micromachining |
| JP5612493B2 (ja) | 2010-03-18 | 2014-10-22 | 株式会社日立ハイテクサイエンス | 複合荷電粒子ビーム装置 |
| WO2011127327A2 (en) | 2010-04-07 | 2011-10-13 | Fei Company | Combination laser and charged particle beam system |
| CN102269772A (zh) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 一种纳米微粒浮栅透射电子显微镜观测样品制备方法 |
| US8283629B1 (en) | 2011-04-15 | 2012-10-09 | Fei Company | Aberration-corrected wien ExB mass filter with removal of neutrals from the Beam |
| JP2013101929A (ja) | 2011-11-07 | 2013-05-23 | Fei Co | 荷電粒子ビーム・システムの絞り |
| WO2013082496A1 (en) | 2011-12-01 | 2013-06-06 | Fei Company | High throughput tem preparation processes and hardware for backside thinning of cross-sectional view lamella |
-
2012
- 2012-06-11 US US13/493,735 patent/US9733164B2/en active Active
-
2013
- 2013-05-24 JP JP2013109593A patent/JP2013257317A/ja active Pending
- 2013-06-09 CN CN201310231578.3A patent/CN103512781A/zh active Pending
- 2013-06-10 EP EP13171169.9A patent/EP2674742A3/en not_active Withdrawn
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