JP6929804B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6929804B2
JP6929804B2 JP2018025759A JP2018025759A JP6929804B2 JP 6929804 B2 JP6929804 B2 JP 6929804B2 JP 2018025759 A JP2018025759 A JP 2018025759A JP 2018025759 A JP2018025759 A JP 2018025759A JP 6929804 B2 JP6929804 B2 JP 6929804B2
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Japan
Prior art keywords
gate electrode
trench gate
dummy
electrode
trench
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JP2018025759A
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Japanese (ja)
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JP2019057702A5 (enExample
JP2019057702A (ja
Inventor
憲一 松下
憲一 松下
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to CN201810186983.0A priority Critical patent/CN109524396B/zh
Priority to US15/926,361 priority patent/US10468512B2/en
Publication of JP2019057702A publication Critical patent/JP2019057702A/ja
Publication of JP2019057702A5 publication Critical patent/JP2019057702A5/ja
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2018025759A 2017-09-20 2018-02-16 半導体装置 Active JP6929804B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810186983.0A CN109524396B (zh) 2017-09-20 2018-03-07 半导体装置
US15/926,361 US10468512B2 (en) 2017-09-20 2018-03-20 Semiconductor device with insulated gate bipolar transistor (IGBT) having multiple resistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017180287 2017-09-20
JP2017180287 2017-09-20

Publications (3)

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JP2019057702A JP2019057702A (ja) 2019-04-11
JP2019057702A5 JP2019057702A5 (enExample) 2020-03-05
JP6929804B2 true JP6929804B2 (ja) 2021-09-01

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JP2018025759A Active JP6929804B2 (ja) 2017-09-20 2018-02-16 半導体装置

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7484093B2 (ja) * 2019-06-24 2024-05-16 富士電機株式会社 半導体装置
JP7305589B2 (ja) * 2020-03-19 2023-07-10 株式会社東芝 半導体装置及び半導体回路
JP7447769B2 (ja) 2020-11-13 2024-03-12 三菱電機株式会社 半導体素子、半導体装置
JP7743736B2 (ja) * 2021-09-08 2025-09-25 富士電機株式会社 絶縁ゲート型バイポーラトランジスタ
JP7781664B2 (ja) 2022-02-10 2025-12-08 株式会社東芝 半導体装置
JP7717652B2 (ja) * 2022-03-22 2025-08-04 株式会社東芝 半導体装置及び半導体回路
WO2024014362A1 (ja) * 2022-07-11 2024-01-18 ローム株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012164851A (ja) * 2011-02-08 2012-08-30 Toyota Motor Corp 半導体装置
DE102014119543B4 (de) * 2014-12-23 2018-10-11 Infineon Technologies Ag Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul
JP6950186B2 (ja) * 2017-01-17 2021-10-13 富士電機株式会社 半導体装置

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