JP6924648B2 - ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング - Google Patents

ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング Download PDF

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JP6924648B2
JP6924648B2 JP2017154337A JP2017154337A JP6924648B2 JP 6924648 B2 JP6924648 B2 JP 6924648B2 JP 2017154337 A JP2017154337 A JP 2017154337A JP 2017154337 A JP2017154337 A JP 2017154337A JP 6924648 B2 JP6924648 B2 JP 6924648B2
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boron
gas
substrate
oxide film
metal oxide
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JP2018026566A (ja
JP2018026566A5 (https=
Inventor
ロバート　ディー．クラーク
ディー．クラーク ロバート
エヌ．タピリー カンダバラ
エヌ．タピリー カンダバラ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B7/00—Halogens; Halogen acids
    • C01B7/19—Fluorine; Hydrogen fluoride
    • C01B7/191—Hydrogen fluoride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/06—Boron halogen compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2017154337A 2016-08-10 2017-08-09 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング Active JP6924648B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662373232P 2016-08-10 2016-08-10
US62/373,232 2016-08-10

Publications (3)

Publication Number Publication Date
JP2018026566A JP2018026566A (ja) 2018-02-15
JP2018026566A5 JP2018026566A5 (https=) 2020-07-30
JP6924648B2 true JP6924648B2 (ja) 2021-08-25

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JP2017154337A Active JP6924648B2 (ja) 2016-08-10 2017-08-09 ホウ素含有ガスおよびフッ化水素ガスを使用した原子層エッチング

Country Status (4)

Country Link
US (2) US10283369B2 (https=)
JP (1) JP6924648B2 (https=)
KR (1) KR102510736B1 (https=)
TW (1) TWI717544B (https=)

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JP6679642B2 (ja) * 2018-03-27 2020-04-15 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102902002B1 (ko) * 2018-09-13 2025-12-18 샌트랄 글래스 컴퍼니 리미티드 실리콘 산화물의 에칭 방법 및 에칭 장치
JP7336884B2 (ja) * 2018-10-04 2023-09-01 東京エレクトロン株式会社 表面処理方法及び処理システム
US11387112B2 (en) 2018-10-04 2022-07-12 Tokyo Electron Limited Surface processing method and processing system
KR102448630B1 (ko) * 2019-02-25 2022-09-28 주식회사 아이큐랩 탄화 규소 반도체 공정에서 트렌치 형성 방법
CN121358194A (zh) * 2019-06-11 2026-01-16 应用材料公司 使用氟及金属卤化物来蚀刻金属氧化物
CN111168056A (zh) * 2020-01-17 2020-05-19 宁波柔创纳米科技有限公司 一种金属粉末及降低金属粉末含氧量提升抗氧化性的方法
WO2021168158A2 (en) * 2020-02-18 2021-08-26 Forge Nano Inc. ATOMIC LAYER DEPOSITION (ALD) FOR MULTI-LAYER CERAMIC CAPACITORS (MLCCs)
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum
JP7096279B2 (ja) * 2020-03-25 2022-07-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
WO2022003803A1 (ja) * 2020-06-30 2022-01-06 株式会社日立ハイテク エッチング処理方法およびエッチング処理装置
JP7174016B2 (ja) 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
WO2022050099A1 (ja) * 2020-09-01 2022-03-10 株式会社Adeka エッチング方法
US11488835B2 (en) 2020-11-20 2022-11-01 Applied Materials, Inc. Systems and methods for tungsten-containing film removal
JP7621876B2 (ja) * 2021-01-26 2025-01-27 東京エレクトロン株式会社 基板処理方法、部品処理方法及び基板処理装置
US11462414B2 (en) * 2021-03-08 2022-10-04 Tokyo Electron Limited Atomic layer etching of metal oxides
US11631589B2 (en) * 2021-05-04 2023-04-18 Applied Materials, Inc. Metal etch in high aspect-ratio features
KR20240027026A (ko) 2021-07-05 2024-02-29 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
WO2023039382A1 (en) * 2021-09-07 2023-03-16 Lam Research Corporation Atomic layer etching using boron trichloride
KR102737905B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 촉매 반응 기반 원자층 식각 방법
KR102737901B1 (ko) * 2021-12-13 2024-12-04 한양대학교 에리카산학협력단 고유전율 박막의 원자층 식각 방법 및 원자층 식각 장치
JP2025505834A (ja) * 2022-02-22 2025-02-28 ラム リサーチ コーポレーション 阻害剤を使用した原子層エッチング
KR20250005333A (ko) 2022-05-02 2025-01-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置
KR20250140553A (ko) * 2023-01-27 2025-09-25 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템

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Also Published As

Publication number Publication date
JP2018026566A (ja) 2018-02-15
KR102510736B1 (ko) 2023-03-15
TWI717544B (zh) 2021-02-01
US10283369B2 (en) 2019-05-07
US20180047577A1 (en) 2018-02-15
US20190267249A1 (en) 2019-08-29
US10790156B2 (en) 2020-09-29
KR20180018413A (ko) 2018-02-21
TW201820459A (zh) 2018-06-01

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