JP6923518B2 - 複合構造 - Google Patents

複合構造 Download PDF

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Publication number
JP6923518B2
JP6923518B2 JP2018520170A JP2018520170A JP6923518B2 JP 6923518 B2 JP6923518 B2 JP 6923518B2 JP 2018520170 A JP2018520170 A JP 2018520170A JP 2018520170 A JP2018520170 A JP 2018520170A JP 6923518 B2 JP6923518 B2 JP 6923518B2
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Japan
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layer
composite structure
acoustic wave
useful layer
functional layer
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Japanese (ja)
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JP2018537888A (ja
JP2018537888A5 (enExample
Inventor
ゲナール パスカル
ゲナール パスカル
ラドゥ イオヌット
ラドゥ イオヌット
ランドリュ ディディエ
ランドリュ ディディエ
デボネ エリック
デボネ エリック
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Soitec SA
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Soitec SA
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Publication of JP2018537888A5 publication Critical patent/JP2018537888A5/ja
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Publication of JP6923518B2 publication Critical patent/JP6923518B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2018520170A 2015-10-20 2016-10-17 複合構造 Active JP6923518B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe
FR1559994 2015-10-20
PCT/FR2016/052675 WO2017068270A1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé

Publications (3)

Publication Number Publication Date
JP2018537888A JP2018537888A (ja) 2018-12-20
JP2018537888A5 JP2018537888A5 (enExample) 2019-11-28
JP6923518B2 true JP6923518B2 (ja) 2021-08-18

Family

ID=54708030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018520170A Active JP6923518B2 (ja) 2015-10-20 2016-10-17 複合構造

Country Status (8)

Country Link
US (1) US20180316329A1 (enExample)
EP (1) EP3365927B1 (enExample)
JP (1) JP6923518B2 (enExample)
KR (1) KR102671257B1 (enExample)
CN (2) CN114512595A (enExample)
FR (1) FR3042647B1 (enExample)
SG (1) SG11201803341QA (enExample)
WO (1) WO2017068270A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
FR3076126A1 (fr) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
CN113544546B (zh) 2019-03-29 2023-11-10 深圳帧观德芯科技有限公司 半导体x射线检测器
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
GB2598665B (en) * 2020-09-04 2025-07-23 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299B1 (en) * 2020-10-26 2025-08-06 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
US20230208399A1 (en) 2021-12-29 2023-06-29 Skyworks Solutions, Inc. Multilayer piezoelectric substrate surface acoustic wave device with tilted multilayer interdigital transducer electrode
US12470199B2 (en) 2022-01-13 2025-11-11 Skyworks Solutions, Inc. Acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US20230344415A1 (en) 2022-04-15 2023-10-26 Skyworks Solutions, Inc. Multiplexers with different filter types on different dies

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
JPH10297931A (ja) * 1997-04-24 1998-11-10 Matsushita Electric Ind Co Ltd 複合圧電基板の製造方法
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
JP3815424B2 (ja) * 2002-11-08 2006-08-30 株式会社村田製作所 弾性境界波装置
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
JP4419962B2 (ja) * 2004-01-19 2010-02-24 株式会社村田製作所 弾性境界波装置
WO2007142112A1 (ja) * 2006-06-02 2007-12-13 Murata Manufacturing Co., Ltd. 多層セラミック基板およびその製造方法ならびに電子部品
US7608986B2 (en) * 2006-10-02 2009-10-27 Seiko Epson Corporation Quartz crystal resonator
WO2008078481A1 (ja) * 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
US7408286B1 (en) * 2007-01-17 2008-08-05 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
WO2008126486A1 (ja) * 2007-04-09 2008-10-23 Murata Manufacturing Co., Ltd. 誘電体セラミック組成物ならびにセラミック基板およびその製造方法
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
JP5029699B2 (ja) * 2007-11-30 2012-09-19 株式会社村田製作所 セラミック複合多層基板及びその製造方法並びに電子部品
JP4460612B2 (ja) * 2008-02-08 2010-05-12 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
WO2009139272A1 (ja) * 2008-05-15 2009-11-19 株式会社村田製作所 多層セラミック基板およびその製造方法
FR2942911B1 (fr) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法
JP6242597B2 (ja) * 2013-06-03 2017-12-06 太陽誘電株式会社 弾性波デバイス及びその製造方法
US9646911B2 (en) * 2014-04-10 2017-05-09 Sensor Electronic Technology, Inc. Composite substrate

Also Published As

Publication number Publication date
US20180316329A1 (en) 2018-11-01
KR20180074732A (ko) 2018-07-03
JP2018537888A (ja) 2018-12-20
EP3365927B1 (fr) 2021-03-24
CN114512595A (zh) 2022-05-17
FR3042647A1 (fr) 2017-04-21
CN108271425A (zh) 2018-07-10
EP3365927A1 (fr) 2018-08-29
FR3042647B1 (fr) 2017-12-01
WO2017068270A1 (fr) 2017-04-27
SG11201803341QA (en) 2018-05-30
KR102671257B1 (ko) 2024-06-03

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