FR3042647B1 - Structure composite et procede de fabrication associe - Google Patents

Structure composite et procede de fabrication associe

Info

Publication number
FR3042647B1
FR3042647B1 FR1559994A FR1559994A FR3042647B1 FR 3042647 B1 FR3042647 B1 FR 3042647B1 FR 1559994 A FR1559994 A FR 1559994A FR 1559994 A FR1559994 A FR 1559994A FR 3042647 B1 FR3042647 B1 FR 3042647B1
Authority
FR
France
Prior art keywords
manufacturing
same
composite structure
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1559994A
Other languages
English (en)
French (fr)
Other versions
FR3042647A1 (fr
Inventor
Pascal Guenard
Ionut Radu
Didier Landru
Eric Desbonnets
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1559994A priority Critical patent/FR3042647B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to US15/769,698 priority patent/US20180316329A1/en
Priority to PCT/FR2016/052675 priority patent/WO2017068270A1/fr
Priority to CN202210146142.3A priority patent/CN114512595A/zh
Priority to KR1020187014265A priority patent/KR102671257B1/ko
Priority to EP16798236.2A priority patent/EP3365927B1/fr
Priority to CN201680065643.1A priority patent/CN108271425A/zh
Priority to SG11201803341QA priority patent/SG11201803341QA/en
Priority to JP2018520170A priority patent/JP6923518B2/ja
Publication of FR3042647A1 publication Critical patent/FR3042647A1/fr
Application granted granted Critical
Publication of FR3042647B1 publication Critical patent/FR3042647B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02031—Characteristics of piezoelectric layers, e.g. cutting angles consisting of ceramic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0407—Temperature coefficient

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR1559994A 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe Active FR3042647B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe
PCT/FR2016/052675 WO2017068270A1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé
CN202210146142.3A CN114512595A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法
KR1020187014265A KR102671257B1 (ko) 2015-10-20 2016-10-17 복합 구조체 및 관련 제조 방법
US15/769,698 US20180316329A1 (en) 2015-10-20 2016-10-17 Composite structure and associated production method
EP16798236.2A EP3365927B1 (fr) 2015-10-20 2016-10-17 Structure composite et procédé de fabrication associé
CN201680065643.1A CN108271425A (zh) 2015-10-20 2016-10-17 复合结构及相关制造方法
SG11201803341QA SG11201803341QA (en) 2015-10-20 2016-10-17 Composite structure and associated production method
JP2018520170A JP6923518B2 (ja) 2015-10-20 2016-10-17 複合構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1559994A FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe

Publications (2)

Publication Number Publication Date
FR3042647A1 FR3042647A1 (fr) 2017-04-21
FR3042647B1 true FR3042647B1 (fr) 2017-12-01

Family

ID=54708030

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1559994A Active FR3042647B1 (fr) 2015-10-20 2015-10-20 Structure composite et procede de fabrication associe

Country Status (8)

Country Link
US (1) US20180316329A1 (enExample)
EP (1) EP3365927B1 (enExample)
JP (1) JP6923518B2 (enExample)
KR (1) KR102671257B1 (enExample)
CN (2) CN108271425A (enExample)
FR (1) FR3042647B1 (enExample)
SG (1) SG11201803341QA (enExample)
WO (1) WO2017068270A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3068508B1 (fr) * 2017-06-30 2019-07-26 Soitec Procede de transfert d'une couche mince sur un substrat support presentant des coefficients de dilatation thermique differents
FR3076126A1 (fr) * 2017-12-26 2019-06-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un resonateur acoustique a ondes de volume a capacite parasite reduite
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
WO2020198934A1 (en) 2019-03-29 2020-10-08 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor x-ray detector
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN111883644B (zh) * 2020-07-23 2021-04-13 中国科学院上海微系统与信息技术研究所 一种异质压电薄膜结构及其制备方法
GB2598665B (en) * 2020-09-04 2025-07-23 Skyworks Solutions Inc Multi-layer piezoelectric substrate with controllable delta temperature coefficient of frequency
EP3989299B1 (en) * 2020-10-26 2025-08-06 Université de Franche-Comté Piezoelectric device comprising flexible single crystalline piezoelectric linbo3 and/or litao3 films integrated on flexible substrate and methods for producing the same
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US20230223910A1 (en) 2022-01-13 2023-07-13 Skyworks Solutions, Inc. Method of making acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
US12500572B2 (en) 2022-04-15 2025-12-16 Skyworks Solutions, Inc. Multiplexer formed on multi-layer piezoelectric substrate and temperature compensated surface acoustic wave device dies

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
TW219354B (en) * 1993-05-31 1994-01-21 Ind Tech Res Inst Strengthening of multi-layer ceramic/glass articles
JPH10297931A (ja) * 1997-04-24 1998-11-10 Matsushita Electric Ind Co Ltd 複合圧電基板の製造方法
TW449937B (en) * 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
JP3815424B2 (ja) * 2002-11-08 2006-08-30 株式会社村田製作所 弾性境界波装置
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
WO2005069486A1 (ja) * 2004-01-19 2005-07-28 Murata Manufacturing Co., Ltd. 弾性境界波装置
WO2007142112A1 (ja) * 2006-06-02 2007-12-13 Murata Manufacturing Co., Ltd. 多層セラミック基板およびその製造方法ならびに電子部品
US7608986B2 (en) * 2006-10-02 2009-10-27 Seiko Epson Corporation Quartz crystal resonator
JP4894861B2 (ja) * 2006-12-25 2012-03-14 株式会社村田製作所 弾性境界波装置
US7408286B1 (en) * 2007-01-17 2008-08-05 Rf Micro Devices, Inc. Piezoelectric substrate for a saw device
JP5104761B2 (ja) * 2007-04-09 2012-12-19 株式会社村田製作所 セラミック基板およびその製造方法
JP2009124696A (ja) * 2007-10-26 2009-06-04 Panasonic Electric Works Co Ltd 共振装置
CN101874429B (zh) * 2007-11-30 2013-04-03 株式会社村田制作所 陶瓷复合多层基板及其制造方法以及电子元器件
JP4460612B2 (ja) * 2008-02-08 2010-05-12 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
CN104589738A (zh) * 2008-05-15 2015-05-06 株式会社村田制作所 多层陶瓷基板及其制造方法
FR2942911B1 (fr) * 2009-03-09 2011-05-13 Soitec Silicon On Insulator Procede de realisation d'une heterostructure avec adaptation locale de coefficient de dilatation thermique
WO2014129432A1 (ja) * 2013-02-19 2014-08-28 日本碍子株式会社 複合基板、弾性波デバイス及び弾性波デバイスの製法
JP6242597B2 (ja) * 2013-06-03 2017-12-06 太陽誘電株式会社 弾性波デバイス及びその製造方法
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Also Published As

Publication number Publication date
WO2017068270A1 (fr) 2017-04-27
CN108271425A (zh) 2018-07-10
EP3365927B1 (fr) 2021-03-24
JP2018537888A (ja) 2018-12-20
US20180316329A1 (en) 2018-11-01
CN114512595A (zh) 2022-05-17
EP3365927A1 (fr) 2018-08-29
SG11201803341QA (en) 2018-05-30
KR102671257B1 (ko) 2024-06-03
JP6923518B2 (ja) 2021-08-18
KR20180074732A (ko) 2018-07-03
FR3042647A1 (fr) 2017-04-21

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