JP6913569B2 - 被処理体を処理する方法 - Google Patents

被処理体を処理する方法 Download PDF

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Publication number
JP6913569B2
JP6913569B2 JP2017162600A JP2017162600A JP6913569B2 JP 6913569 B2 JP6913569 B2 JP 6913569B2 JP 2017162600 A JP2017162600 A JP 2017162600A JP 2017162600 A JP2017162600 A JP 2017162600A JP 6913569 B2 JP6913569 B2 JP 6913569B2
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film
gas
hole
etching
processing
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Japanese (ja)
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JP2019041020A5 (https=
JP2019041020A (ja
Inventor
雅弘 田端
雅弘 田端
亨 久松
亨 久松
嘉英 木原
嘉英 木原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2017162600A priority Critical patent/JP6913569B2/ja
Priority to TW107128535A priority patent/TWI785095B/zh
Priority to TW111137161A priority patent/TWI858400B/zh
Priority to KR1020180098612A priority patent/KR102735966B1/ko
Priority to CN201810971378.4A priority patent/CN109427561B/zh
Priority to US16/111,622 priority patent/US10559472B2/en
Publication of JP2019041020A publication Critical patent/JP2019041020A/ja
Priority to US16/731,456 priority patent/US11133192B2/en
Publication of JP2019041020A5 publication Critical patent/JP2019041020A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4088—Processes for improving the resolution of the masks
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/3244—Gas supply means
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    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
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    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
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    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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    • H10P50/00—Etching of wafers, substrates or parts of devices
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    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
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    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
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    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017162600A 2017-08-25 2017-08-25 被処理体を処理する方法 Active JP6913569B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017162600A JP6913569B2 (ja) 2017-08-25 2017-08-25 被処理体を処理する方法
TW107128535A TWI785095B (zh) 2017-08-25 2018-08-16 被處理體之處理方法
TW111137161A TWI858400B (zh) 2017-08-25 2018-08-16 電漿處理裝置
KR1020180098612A KR102735966B1 (ko) 2017-08-25 2018-08-23 피처리체를 처리하는 방법
CN201810971378.4A CN109427561B (zh) 2017-08-25 2018-08-24 处理被处理体的方法
US16/111,622 US10559472B2 (en) 2017-08-25 2018-08-24 Workpiece processing method
US16/731,456 US11133192B2 (en) 2017-08-25 2019-12-31 Workpiece processing method

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JP2017162600A JP6913569B2 (ja) 2017-08-25 2017-08-25 被処理体を処理する方法

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JP2019041020A JP2019041020A (ja) 2019-03-14
JP2019041020A5 JP2019041020A5 (https=) 2020-06-18
JP6913569B2 true JP6913569B2 (ja) 2021-08-04

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JP (1) JP6913569B2 (https=)
KR (1) KR102735966B1 (https=)
CN (1) CN109427561B (https=)
TW (2) TWI785095B (https=)

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JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP7066565B2 (ja) * 2018-07-27 2022-05-13 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US10950428B1 (en) * 2019-08-30 2021-03-16 Mattson Technology, Inc. Method for processing a workpiece
WO2021050308A1 (en) * 2019-09-12 2021-03-18 Applied Materials, Inc. Repulsion mesh and deposition methods
US11443923B2 (en) * 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
JP7500332B2 (ja) * 2020-08-05 2024-06-17 キオクシア株式会社 半導体記憶装置及びその製造方法
JP2022096079A (ja) * 2020-12-17 2022-06-29 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

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US6635335B1 (en) * 1999-06-29 2003-10-21 Micron Technology, Inc. Etching methods and apparatus and substrate assemblies produced therewith
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US11133192B2 (en) 2021-09-28
US20200135480A1 (en) 2020-04-30
TW201920716A (zh) 2019-06-01
KR102735966B1 (ko) 2024-11-28
TW202305153A (zh) 2023-02-01
CN109427561B (zh) 2023-07-07
US10559472B2 (en) 2020-02-11
JP2019041020A (ja) 2019-03-14
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US20190067019A1 (en) 2019-02-28
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