JP6891099B2 - 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 - Google Patents

位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Download PDF

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JP6891099B2
JP6891099B2 JP2017230282A JP2017230282A JP6891099B2 JP 6891099 B2 JP6891099 B2 JP 6891099B2 JP 2017230282 A JP2017230282 A JP 2017230282A JP 2017230282 A JP2017230282 A JP 2017230282A JP 6891099 B2 JP6891099 B2 JP 6891099B2
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phase shift
layer
film
light
chromium
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JP2018116263A (ja
JP2018116263A5 (https=
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誠治 坪井
誠治 坪井
順一 安森
順一 安森
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Hoya Corp
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Hoya Corp
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Priority to TW106146200A priority Critical patent/TWI800499B/zh
Priority to TW112111541A priority patent/TWI808927B/zh
Priority to KR1020180001708A priority patent/KR102505733B1/ko
Priority to CN202311459935.1A priority patent/CN117518704A/zh
Priority to CN201810034453.4A priority patent/CN108319103B/zh
Publication of JP2018116263A publication Critical patent/JP2018116263A/ja
Publication of JP2018116263A5 publication Critical patent/JP2018116263A5/ja
Priority to JP2021087557A priority patent/JP7095157B2/ja
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Priority to KR1020230025855A priority patent/KR102548886B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
JP2017230282A 2017-01-16 2017-11-30 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 Active JP6891099B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW106146200A TWI800499B (zh) 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法
TW112111541A TWI808927B (zh) 2017-01-16 2017-12-28 相位偏移光罩基底及使用其之相位偏移光罩之製造方法、與顯示裝置之製造方法
KR1020180001708A KR102505733B1 (ko) 2017-01-16 2018-01-05 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
CN201810034453.4A CN108319103B (zh) 2017-01-16 2018-01-15 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
CN202311459935.1A CN117518704A (zh) 2017-01-16 2018-01-15 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
JP2021087557A JP7095157B2 (ja) 2017-01-16 2021-05-25 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
KR1020230025855A KR102548886B1 (ko) 2017-01-16 2023-02-27 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017004875 2017-01-16
JP2017004875 2017-01-16

Related Child Applications (1)

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JP2021087557A Division JP7095157B2 (ja) 2017-01-16 2021-05-25 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

Publications (3)

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JP2018116263A JP2018116263A (ja) 2018-07-26
JP2018116263A5 JP2018116263A5 (https=) 2020-10-08
JP6891099B2 true JP6891099B2 (ja) 2021-06-18

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JP2017230282A Active JP6891099B2 (ja) 2017-01-16 2017-11-30 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP2021087557A Active JP7095157B2 (ja) 2017-01-16 2021-05-25 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

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JP2021087557A Active JP7095157B2 (ja) 2017-01-16 2021-05-25 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法

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JP (2) JP6891099B2 (https=)
KR (2) KR102505733B1 (https=)
CN (1) CN117518704A (https=)
TW (2) TWI808927B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
KR102582203B1 (ko) * 2018-09-14 2023-09-22 가부시키가이샤 니콘 위상 시프트 마스크 블랭크스, 위상 시프트 마스크, 노광 방법, 및 디바이스의 제조 방법
JP2022083394A (ja) * 2020-11-24 2022-06-03 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び表示装置の製造方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
WO2022230694A1 (ja) * 2021-04-30 2022-11-03 株式会社ニコン 位相シフトマスクブランクス、位相シフトマスク、露光方法、及びデバイスの製造方法
KR102535171B1 (ko) * 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (16)

* Cited by examiner, † Cited by third party
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JPS6342205A (ja) * 1986-08-07 1988-02-23 Nec Corp 発振回路
JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JPH10186632A (ja) * 1996-10-24 1998-07-14 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
JP2983020B1 (ja) * 1998-12-18 1999-11-29 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2001083687A (ja) * 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
US6500587B1 (en) * 2001-02-02 2002-12-31 Advanced Micro Devices, Inc. Binary and attenuating phase-shifting masks for multiple wavelengths
JP2005092241A (ja) * 2002-03-01 2005-04-07 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP4784983B2 (ja) * 2006-01-10 2011-10-05 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP5121020B2 (ja) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
KR101282040B1 (ko) 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP5743008B2 (ja) * 2014-06-06 2015-07-01 信越化学工業株式会社 フォトマスクブランク及びその製造方法、フォトマスク、光パターン照射方法、並びにハーフトーン位相シフト膜の設計方法
KR101810805B1 (ko) * 2014-12-26 2017-12-19 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6322250B2 (ja) * 2016-10-05 2018-05-09 Hoya株式会社 フォトマスクブランク

Also Published As

Publication number Publication date
JP2021144237A (ja) 2021-09-24
CN117518704A (zh) 2024-02-06
TWI808927B (zh) 2023-07-11
TW201832921A (zh) 2018-09-16
JP2018116263A (ja) 2018-07-26
JP7095157B2 (ja) 2022-07-04
KR20230035005A (ko) 2023-03-10
TWI800499B (zh) 2023-05-01
TW202328801A (zh) 2023-07-16
KR102548886B1 (ko) 2023-06-30
KR20180084636A (ko) 2018-07-25
KR102505733B1 (ko) 2023-03-03

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