KR102505733B1 - 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 - Google Patents

위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 Download PDF

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KR102505733B1
KR102505733B1 KR1020180001708A KR20180001708A KR102505733B1 KR 102505733 B1 KR102505733 B1 KR 102505733B1 KR 1020180001708 A KR1020180001708 A KR 1020180001708A KR 20180001708 A KR20180001708 A KR 20180001708A KR 102505733 B1 KR102505733 B1 KR 102505733B1
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phase shift
layer
film
light
reflectance
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KR20180084636A (ko
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세이지 츠보이
준이치 야스모리
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
KR1020180001708A 2017-01-16 2018-01-05 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법 Active KR102505733B1 (ko)

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KR1020230025855A KR102548886B1 (ko) 2017-01-16 2023-02-27 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2017-004875 2017-01-16
JP2017004875 2017-01-16
JP2017230282A JP6891099B2 (ja) 2017-01-16 2017-11-30 位相シフトマスクブランクおよびこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JPJP-P-2017-230282 2017-11-30

Related Child Applications (1)

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KR1020230025855A Division KR102548886B1 (ko) 2017-01-16 2023-02-27 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

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KR20180084636A KR20180084636A (ko) 2018-07-25
KR102505733B1 true KR102505733B1 (ko) 2023-03-03

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KR1020180001708A Active KR102505733B1 (ko) 2017-01-16 2018-01-05 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
KR1020230025855A Active KR102548886B1 (ko) 2017-01-16 2023-02-27 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

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JP (2) JP6891099B2 (https=)
KR (2) KR102505733B1 (https=)
CN (1) CN117518704A (https=)
TW (2) TWI808927B (https=)

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TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
KR102582203B1 (ko) * 2018-09-14 2023-09-22 가부시키가이샤 니콘 위상 시프트 마스크 블랭크스, 위상 시프트 마스크, 노광 방법, 및 디바이스의 제조 방법
JP2022083394A (ja) * 2020-11-24 2022-06-03 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクの製造方法及び表示装置の製造方法
KR102402742B1 (ko) * 2021-04-30 2022-05-26 에스케이씨솔믹스 주식회사 포토마스크 블랭크 및 이를 이용한 포토마스크
WO2022230694A1 (ja) * 2021-04-30 2022-11-03 株式会社ニコン 位相シフトマスクブランクス、位相シフトマスク、露光方法、及びデバイスの製造方法
KR102535171B1 (ko) * 2021-11-04 2023-05-26 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (1)

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JP2000181049A (ja) 1998-12-18 2000-06-30 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク

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JP3262302B2 (ja) * 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JPH10186632A (ja) * 1996-10-24 1998-07-14 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスク
JP2001083687A (ja) * 1999-09-09 2001-03-30 Dainippon Printing Co Ltd ハーフトーン位相シフトフォトマスク及びこれを作製するためのハーフトーン位相シフトフォトマスク用ブランクス
US6500587B1 (en) * 2001-02-02 2002-12-31 Advanced Micro Devices, Inc. Binary and attenuating phase-shifting masks for multiple wavelengths
JP2005092241A (ja) * 2002-03-01 2005-04-07 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP4784983B2 (ja) * 2006-01-10 2011-10-05 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP5121020B2 (ja) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 多階調フォトマスク、フォトマスクブランク、及びパターン転写方法
KR101282040B1 (ko) 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP5743008B2 (ja) * 2014-06-06 2015-07-01 信越化学工業株式会社 フォトマスクブランク及びその製造方法、フォトマスク、光パターン照射方法、並びにハーフトーン位相シフト膜の設計方法
KR101810805B1 (ko) * 2014-12-26 2017-12-19 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6322250B2 (ja) * 2016-10-05 2018-05-09 Hoya株式会社 フォトマスクブランク

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JP2021144237A (ja) 2021-09-24
CN117518704A (zh) 2024-02-06
TWI808927B (zh) 2023-07-11
TW201832921A (zh) 2018-09-16
JP2018116263A (ja) 2018-07-26
JP7095157B2 (ja) 2022-07-04
KR20230035005A (ko) 2023-03-10
TWI800499B (zh) 2023-05-01
TW202328801A (zh) 2023-07-16
KR102548886B1 (ko) 2023-06-30
KR20180084636A (ko) 2018-07-25
JP6891099B2 (ja) 2021-06-18

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