JP6883274B2 - 金属酸化物薄膜の製造方法及び薄膜製造装置 - Google Patents
金属酸化物薄膜の製造方法及び薄膜製造装置 Download PDFInfo
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- JP6883274B2 JP6883274B2 JP2016223729A JP2016223729A JP6883274B2 JP 6883274 B2 JP6883274 B2 JP 6883274B2 JP 2016223729 A JP2016223729 A JP 2016223729A JP 2016223729 A JP2016223729 A JP 2016223729A JP 6883274 B2 JP6883274 B2 JP 6883274B2
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- metal oxide
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- thin film
- metal
- evaporation temperature
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 99
- 150000004706 metal oxides Chemical class 0.000 title claims description 99
- 239000010409 thin film Substances 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 98
- 239000002184 metal Substances 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 47
- 238000001704 evaporation Methods 0.000 claims description 44
- 230000008020 evaporation Effects 0.000 claims description 43
- 239000010408 film Substances 0.000 claims description 35
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims description 32
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 38
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 230000006837 decompression Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- -1 ITO Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- Physical Vapour Deposition (AREA)
Description
2 金属線
3 処理ステージ
4 チャンバ
5 パッキン
6 プロセスガス供給口
7 N2ガス供給口
8 減圧装置
9 電源
10 電流導入端子
a プロセスガス
b N2ガス
c 排気
Claims (5)
- 基材をチャンバ内に投入する準備工程と、
前記準備工程後、前記チャンバ内を排気する減圧工程と、
前記減圧工程後、前記チャンバ内を、酸素濃度が10〜1000ppmであり、水素濃度が10〜1000ppmである低圧の雰囲気にして、前記チャンバ内に設置した金属を加熱して金属酸化物を生成させる金属酸化物生成工程と、
前記金属酸化物を蒸発温度まで加熱し、前記基材上に堆積させる成膜工程と
を含む、金属酸化物の蒸発温度より金属の蒸発温度が高い金属酸化物薄膜の製造方法。 - 前記金属酸化物生成工程が、酸素及び水素を前記チャンバ内に導入する工程を含み、
前記成膜工程において、前記酸素及び水素の導入を停止する工程をさらに含む、請求項1に記載の方法。 - 前記金属が、タングステンである、請求項1または2に記載の方法。
- 基材をチャンバ内に投入する準備工程と、
前記準備工程後、前記チャンバ内を排気する減圧工程と、
前記減圧工程後、前記チャンバ内を酸素を含んだ低圧の雰囲気にして、前記チャンバ内に設置したタングステンを加熱して三酸化タングステンを生成させる金属酸化物生成工程と、
前記三酸化タングステンを1200℃まで加熱し、前記基材上に堆積させる成膜工程と
を含む、三酸化タングステン薄膜の製造方法。 - 基材をチャンバ内に投入する準備工程と、
前記準備工程後、前記チャンバ内を排気する減圧工程と、
前記減圧工程後、前記チャンバ内を酸素を含んだ低圧の雰囲気にして、前記チャンバ内に設置した金属を加熱して金属酸化物を生成させる金属酸化物生成工程と、
前記金属酸化物を蒸発温度まで加熱し、前記基材上に堆積させる成膜工程と
を含む、金属酸化物の蒸発温度より金属の蒸発温度が高い金属酸化物薄膜の製造方法であって、
前記蒸発温度が二酸化タングステンの蒸発温度であり、製造される金属酸化物薄膜が二酸化タングステン薄膜であり、
前記二酸化タングステンの蒸発温度に達するまで、気体状の前記金属酸化物から前記基材を遮蔽する工程を含む、方法。
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