JP6883007B2 - 窒化物半導体装置 - Google Patents

窒化物半導体装置 Download PDF

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Publication number
JP6883007B2
JP6883007B2 JP2018175269A JP2018175269A JP6883007B2 JP 6883007 B2 JP6883007 B2 JP 6883007B2 JP 2018175269 A JP2018175269 A JP 2018175269A JP 2018175269 A JP2018175269 A JP 2018175269A JP 6883007 B2 JP6883007 B2 JP 6883007B2
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semiconductor layer
layer
semiconductor
nitride
composition
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JP2018175269A
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Japanese (ja)
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JP2019134153A (ja
JP2019134153A5 (enExample
Inventor
謙次郎 上杉
謙次郎 上杉
重哉 木村
重哉 木村
年輝 彦坂
年輝 彦坂
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

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  • Junction Field-Effect Transistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2018175269A 2018-01-30 2018-09-19 窒化物半導体装置 Active JP6883007B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018013976 2018-01-30
JP2018013976 2018-01-30

Publications (3)

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JP2019134153A JP2019134153A (ja) 2019-08-08
JP2019134153A5 JP2019134153A5 (enExample) 2019-10-31
JP6883007B2 true JP6883007B2 (ja) 2021-06-02

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US (1) US10483354B2 (enExample)
JP (1) JP6883007B2 (enExample)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
TWI701717B (zh) * 2019-08-12 2020-08-11 環球晶圓股份有限公司 磊晶結構
JP6765589B1 (ja) * 2020-02-17 2020-10-07 三菱電機株式会社 エピタキシャルウエハ、半導体装置およびエピタキシャルウエハの製造方法
TWI767219B (zh) * 2020-04-24 2022-06-11 環球晶圓股份有限公司 磊晶結構
JP7462544B2 (ja) * 2020-12-11 2024-04-05 株式会社東芝 窒化物半導体、ウェーハ、半導体装置及び窒化物半導体の製造方法
JP2024068299A (ja) * 2022-11-08 2024-05-20 株式会社東芝 窒化物半導体及び半導体装置
WO2025004581A1 (ja) * 2023-06-28 2025-01-02 ソニーセミコンダクタソリューションズ株式会社 高電子移動度トランジスタ、ｒｆスイッチ回路、パワーアンプ回路および無線通信端末

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JPS5098649A (enExample) 1973-12-30 1975-08-05
JPS5466505A (en) 1977-11-05 1979-05-29 Ozono Kensetsu Kk Method of cutting and registering concrete piles
JP3393602B2 (ja) * 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
US8853666B2 (en) 2005-12-28 2014-10-07 Renesas Electronics Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
JP4282708B2 (ja) 2006-10-20 2009-06-24 株式会社東芝 窒化物系半導体装置
WO2009001888A1 (ja) 2007-06-27 2008-12-31 Nec Corporation 電界効果トランジスタ、ならびに、該電界効果トランジスタの作製に供される多層エピタキシャル膜
JP2012231003A (ja) 2011-04-26 2012-11-22 Advanced Power Device Research Association 半導体装置
TWI587512B (zh) * 2011-05-16 2017-06-11 Renesas Electronics Corp Field effect transistor and semiconductor device
JP5749580B2 (ja) * 2011-06-16 2015-07-15 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP6126354B2 (ja) * 2012-10-31 2017-05-10 株式会社東芝 半導体装置及びその製造方法
JP2015162641A (ja) 2014-02-28 2015-09-07 株式会社豊田中央研究所 絶縁ゲート型窒化物半導体トランジスタ
JP6331695B2 (ja) * 2014-05-28 2018-05-30 三菱電機株式会社 半導体素子の製造方法
JP2016035949A (ja) 2014-08-01 2016-03-17 日本電信電話株式会社 窒化物半導体装置の製造方法
JP2016134564A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体装置
JP6565223B2 (ja) 2015-03-05 2019-08-28 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP2016171265A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置およびその製造方法
US10411125B2 (en) * 2016-11-23 2019-09-10 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device having high linearity-transconductance

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JP2019134153A (ja) 2019-08-08
US10483354B2 (en) 2019-11-19

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