JP6877447B2 - 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 - Google Patents
石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 Download PDFInfo
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- JP6877447B2 JP6877447B2 JP2018539290A JP2018539290A JP6877447B2 JP 6877447 B2 JP6877447 B2 JP 6877447B2 JP 2018539290 A JP2018539290 A JP 2018539290A JP 2018539290 A JP2018539290 A JP 2018539290A JP 6877447 B2 JP6877447 B2 JP 6877447B2
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- carrier substrate
- piezoelectric layer
- axis
- quartz
- quartz carrier
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 168
- 239000000758 substrate Substances 0.000 title claims description 167
- 238000010897 surface acoustic wave method Methods 0.000 title claims description 159
- 239000010453 quartz Substances 0.000 title claims description 145
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000013078 crystal Substances 0.000 claims description 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 10
- 230000035945 sensitivity Effects 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 30
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- 229910052751 metal Inorganic materials 0.000 description 15
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- 229910013641 LiNbO 3 Inorganic materials 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- NVLSIZITFJRWPY-ONEGZZNKSA-N n,n-dimethyl-4-[(e)-2-(4-nitrophenyl)ethenyl]aniline Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC=C([N+]([O-])=O)C=C1 NVLSIZITFJRWPY-ONEGZZNKSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02551—Characteristics of substrate, e.g. cutting angles of quartz substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021073990A JP7317068B2 (ja) | 2016-01-28 | 2021-04-26 | 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662288018P | 2016-01-28 | 2016-01-28 | |
| US62/288,018 | 2016-01-28 | ||
| US15/086,895 US10084427B2 (en) | 2016-01-28 | 2016-03-31 | Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof |
| US15/086,895 | 2016-03-31 | ||
| PCT/US2017/014806 WO2017132183A1 (en) | 2016-01-28 | 2017-01-25 | Surface acoustic wave device having a piezoelectric layer on a quartz substrate and methods of manufacturing thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021073990A Division JP7317068B2 (ja) | 2016-01-28 | 2021-04-26 | 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019507546A JP2019507546A (ja) | 2019-03-14 |
| JP2019507546A5 JP2019507546A5 (enExample) | 2020-01-30 |
| JP6877447B2 true JP6877447B2 (ja) | 2021-05-26 |
Family
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Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018539290A Active JP6877447B2 (ja) | 2016-01-28 | 2017-01-25 | 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 |
| JP2021073990A Active JP7317068B2 (ja) | 2016-01-28 | 2021-04-26 | 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021073990A Active JP7317068B2 (ja) | 2016-01-28 | 2021-04-26 | 石英基板上に圧電層を含む弾性表面波デバイス及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10084427B2 (enExample) |
| JP (2) | JP6877447B2 (enExample) |
| WO (1) | WO2017132183A1 (enExample) |
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| US10924085B2 (en) | 2016-10-17 | 2021-02-16 | Qorvo Us, Inc. | Guided acoustic wave device |
| TWI780103B (zh) * | 2017-05-02 | 2022-10-11 | 日商日本碍子股份有限公司 | 彈性波元件及其製造方法 |
| JP6963423B2 (ja) | 2017-06-14 | 2021-11-10 | 株式会社日本製鋼所 | 接合基板、弾性表面波素子および接合基板の製造方法 |
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| US20170222622A1 (en) | 2017-08-03 |
| WO2017132183A1 (en) | 2017-08-03 |
| JP2021108495A (ja) | 2021-07-29 |
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