JP6866792B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6866792B2
JP6866792B2 JP2017141943A JP2017141943A JP6866792B2 JP 6866792 B2 JP6866792 B2 JP 6866792B2 JP 2017141943 A JP2017141943 A JP 2017141943A JP 2017141943 A JP2017141943 A JP 2017141943A JP 6866792 B2 JP6866792 B2 JP 6866792B2
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trench
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gate
region
liner
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Japanese (ja)
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JP2019021871A5 (enrdf_load_stackoverflow
JP2019021871A (ja
Inventor
勇志 萩野
勇志 萩野
健太 合田
健太 合田
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Denso Corp
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Denso Corp
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Priority to JP2017141943A priority Critical patent/JP6866792B2/ja
Priority to PCT/JP2018/027161 priority patent/WO2019017447A1/ja
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Publication of JP2019021871A5 publication Critical patent/JP2019021871A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes

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  • Electrodes Of Semiconductors (AREA)
JP2017141943A 2017-07-21 2017-07-21 半導体装置およびその製造方法 Active JP6866792B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017141943A JP6866792B2 (ja) 2017-07-21 2017-07-21 半導体装置およびその製造方法
PCT/JP2018/027161 WO2019017447A1 (ja) 2017-07-21 2018-07-19 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017141943A JP6866792B2 (ja) 2017-07-21 2017-07-21 半導体装置およびその製造方法

Publications (3)

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JP2019021871A JP2019021871A (ja) 2019-02-07
JP2019021871A5 JP2019021871A5 (enrdf_load_stackoverflow) 2019-10-31
JP6866792B2 true JP6866792B2 (ja) 2021-04-28

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JP (1) JP6866792B2 (enrdf_load_stackoverflow)
WO (1) WO2019017447A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848378B2 (en) * 2020-08-13 2023-12-19 Stmicroelectronics Pte Ltd Split-gate trench power MOSFET with self-aligned poly-to-poly isolation
JP7319754B2 (ja) * 2020-08-19 2023-08-02 株式会社東芝 半導体装置
JP7392613B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
JP7392612B2 (ja) * 2020-08-26 2023-12-06 株式会社デンソー 半導体装置
WO2022201893A1 (ja) * 2021-03-26 2022-09-29 ローム株式会社 半導体装置
KR102564714B1 (ko) * 2021-12-16 2023-08-09 파워큐브세미 (주) P 베이스에 전기적으로 연결된 쉴드를 갖는 트렌치 게이트 모스펫 및 그 제조 방법
CN118140314A (zh) * 2022-09-23 2024-06-04 华为数字能源技术有限公司 半导体器件、制备方法、功率转换电路及车辆
WO2024060262A1 (zh) * 2022-09-23 2024-03-28 华为数字能源技术有限公司 半导体器件、制备方法、功率转换电路及车辆

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2894820B2 (ja) * 1990-10-25 1999-05-24 株式会社東芝 半導体装置
US6285058B1 (en) * 1997-08-29 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of manufacturing the same
US8552535B2 (en) * 2008-11-14 2013-10-08 Semiconductor Components Industries, Llc Trench shielding structure for semiconductor device and method
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
JP5449094B2 (ja) * 2010-09-07 2014-03-19 株式会社東芝 半導体装置
JP5720582B2 (ja) * 2012-01-12 2015-05-20 トヨタ自動車株式会社 スイッチング素子
JP2017017078A (ja) * 2015-06-29 2017-01-19 株式会社東芝 半導体装置

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JP2019021871A (ja) 2019-02-07

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