JP6836418B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6836418B2
JP6836418B2 JP2017035049A JP2017035049A JP6836418B2 JP 6836418 B2 JP6836418 B2 JP 6836418B2 JP 2017035049 A JP2017035049 A JP 2017035049A JP 2017035049 A JP2017035049 A JP 2017035049A JP 6836418 B2 JP6836418 B2 JP 6836418B2
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Japan
Prior art keywords
wiring
opening
insulating film
pad
film
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JP2017035049A
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Japanese (ja)
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JP2018142586A5 (enExample
JP2018142586A (ja
Inventor
祐治 萱島
祐治 萱島
智久 関口
智久 関口
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2017035049A priority Critical patent/JP6836418B2/ja
Priority to US15/861,261 priority patent/US10297547B2/en
Priority to CN201810158631.4A priority patent/CN108511410B/zh
Priority to CN201820270365.XU priority patent/CN207800597U/zh
Publication of JP2018142586A publication Critical patent/JP2018142586A/ja
Publication of JP2018142586A5 publication Critical patent/JP2018142586A5/ja
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Publication of JP6836418B2 publication Critical patent/JP6836418B2/ja
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
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US15/861,261 US10297547B2 (en) 2017-02-27 2018-01-03 Semiconductor device including first and second wirings
CN201810158631.4A CN108511410B (zh) 2017-02-27 2018-02-26 半导体装置
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