JP6827442B2 - 貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ - Google Patents
貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ Download PDFInfo
- Publication number
- JP6827442B2 JP6827442B2 JP2018114001A JP2018114001A JP6827442B2 JP 6827442 B2 JP6827442 B2 JP 6827442B2 JP 2018114001 A JP2018114001 A JP 2018114001A JP 2018114001 A JP2018114001 A JP 2018114001A JP 6827442 B2 JP6827442 B2 JP 6827442B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicon layer
- layer
- insulating film
- soi wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 54
- 150000003376 silicon Chemical class 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 12
- 230000007547 defect Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 106
- 230000008878 coupling Effects 0.000 description 15
- 238000010168 coupling process Methods 0.000 description 15
- 238000005859 coupling reaction Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018114001A JP6827442B2 (ja) | 2018-06-14 | 2018-06-14 | 貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ |
| KR1020207035831A KR20210020024A (ko) | 2018-06-14 | 2019-05-14 | 첩합soi웨이퍼의 제조방법 및 첩합soi웨이퍼 |
| EP19819168.6A EP3809448B1 (fr) | 2018-06-14 | 2019-05-14 | Tranche soi liée et son procédé de fabrication |
| CN201980039406.1A CN112262455A (zh) | 2018-06-14 | 2019-05-14 | 贴合soi晶圆的制造方法及贴合soi晶圆 |
| US16/973,575 US11495488B2 (en) | 2018-06-14 | 2019-05-14 | Method for manufacturing bonded SOI wafer and bonded SOI wafer |
| PCT/JP2019/019017 WO2019239763A1 (fr) | 2018-06-14 | 2019-05-14 | Tranche soi liée et son procédé de fabrication |
| SG11202011945RA SG11202011945RA (en) | 2018-06-14 | 2019-05-14 | Method for manufacturing bonded soi wafer and bonded soi wafer |
| TW108117570A TWI804626B (zh) | 2018-06-14 | 2019-05-21 | 貼合式soi晶圓的製造方法及貼合式soi晶圓 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018114001A JP6827442B2 (ja) | 2018-06-14 | 2018-06-14 | 貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019216222A JP2019216222A (ja) | 2019-12-19 |
| JP6827442B2 true JP6827442B2 (ja) | 2021-02-10 |
Family
ID=68843208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018114001A Active JP6827442B2 (ja) | 2018-06-14 | 2018-06-14 | 貼り合わせｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11495488B2 (fr) |
| EP (1) | EP3809448B1 (fr) |
| JP (1) | JP6827442B2 (fr) |
| KR (1) | KR20210020024A (fr) |
| CN (1) | CN112262455A (fr) |
| SG (1) | SG11202011945RA (fr) |
| TW (1) | TWI804626B (fr) |
| WO (1) | WO2019239763A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021190660A (ja) * | 2020-06-04 | 2021-12-13 | 株式会社Sumco | 貼り合わせウェーハ用の支持基板 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246756A (ja) * | 1988-08-08 | 1990-02-16 | Mitsubishi Electric Corp | 半導体容量素子の製造方法 |
| US5229305A (en) * | 1992-02-03 | 1993-07-20 | Motorola, Inc. | Method for making intrinsic gettering sites in bonded substrates |
| JPH06232390A (ja) * | 1993-01-29 | 1994-08-19 | Nippon Steel Corp | 半導体装置のポリサイド配線の製造方法 |
| JPH08186167A (ja) * | 1994-12-27 | 1996-07-16 | Mitsubishi Materials Shilicon Corp | 張り合わせ誘電体分離ウェーハの製造方法 |
| US8299537B2 (en) | 2009-02-11 | 2012-10-30 | International Business Machines Corporation | Semiconductor-on-insulator substrate and structure including multiple order radio frequency harmonic supressing region |
| US8786051B2 (en) * | 2012-02-21 | 2014-07-22 | International Business Machines Corporation | Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance |
| FR3019373A1 (fr) | 2014-03-31 | 2015-10-02 | St Microelectronics Sa | Procede de fabrication d'une plaque de semi-conducteur adaptee pour la fabrication d'un substrat soi et plaque de substrat ainsi obtenue |
| JP6100200B2 (ja) | 2014-04-24 | 2017-03-22 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| JP6118757B2 (ja) | 2014-04-24 | 2017-04-19 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| JP6156252B2 (ja) * | 2014-05-16 | 2017-07-05 | 株式会社豊田自動織機 | 半導体基板の製造方法および半導体基板 |
| JP2015228432A (ja) * | 2014-06-02 | 2015-12-17 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法及び貼り合わせｓｏｉウェーハ |
| EP3221884B1 (fr) | 2014-11-18 | 2022-06-01 | GlobalWafers Co., Ltd. | Plaquettes de semi-conducteur sur isolant à haute résistivité comprenant couches de piégeage de charges et son procédé de fabrication. |
| JP2016143820A (ja) | 2015-02-04 | 2016-08-08 | 信越半導体株式会社 | 貼り合わせ半導体ウェーハ及びその製造方法 |
| WO2016140850A1 (fr) | 2015-03-03 | 2016-09-09 | Sunedison Semiconductor Limited | Procédé pour déposer des films de silicium polycristallin de piégeage de charge sur des substrats de silicium avec une contrainte de film pouvant être maîtrisée |
| JP6353814B2 (ja) * | 2015-06-09 | 2018-07-04 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| JP6443394B2 (ja) * | 2016-06-06 | 2018-12-26 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
-
2018
- 2018-06-14 JP JP2018114001A patent/JP6827442B2/ja active Active
-
2019
- 2019-05-14 SG SG11202011945RA patent/SG11202011945RA/en unknown
- 2019-05-14 EP EP19819168.6A patent/EP3809448B1/fr active Active
- 2019-05-14 WO PCT/JP2019/019017 patent/WO2019239763A1/fr active Application Filing
- 2019-05-14 KR KR1020207035831A patent/KR20210020024A/ko not_active Application Discontinuation
- 2019-05-14 CN CN201980039406.1A patent/CN112262455A/zh active Pending
- 2019-05-14 US US16/973,575 patent/US11495488B2/en active Active
- 2019-05-21 TW TW108117570A patent/TWI804626B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019216222A (ja) | 2019-12-19 |
| TWI804626B (zh) | 2023-06-11 |
| WO2019239763A1 (fr) | 2019-12-19 |
| US11495488B2 (en) | 2022-11-08 |
| EP3809448A4 (fr) | 2022-03-02 |
| TW202001988A (zh) | 2020-01-01 |
| CN112262455A (zh) | 2021-01-22 |
| EP3809448B1 (fr) | 2023-03-01 |
| SG11202011945RA (en) | 2021-01-28 |
| KR20210020024A (ko) | 2021-02-23 |
| US20210249301A1 (en) | 2021-08-12 |
| EP3809448A1 (fr) | 2021-04-21 |
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