JP6825290B2 - 圧電素子 - Google Patents
圧電素子 Download PDFInfo
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- JP6825290B2 JP6825290B2 JP2016191737A JP2016191737A JP6825290B2 JP 6825290 B2 JP6825290 B2 JP 6825290B2 JP 2016191737 A JP2016191737 A JP 2016191737A JP 2016191737 A JP2016191737 A JP 2016191737A JP 6825290 B2 JP6825290 B2 JP 6825290B2
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- electrode
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- 239000004020 conductor Substances 0.000 claims description 161
- 239000011159 matrix material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 description 9
- 230000000149 penetrating effect Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910003291 Ni–Mn–Fe Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- GROMGGTZECPEKN-UHFFFAOYSA-N sodium metatitanate Chemical compound [Na+].[Na+].[O-][Ti](=O)O[Ti](=O)O[Ti]([O-])=O GROMGGTZECPEKN-UHFFFAOYSA-N 0.000 description 1
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
- H10N30/508—Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
- H10N30/874—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices embedded within piezoelectric or electrostrictive material, e.g. via connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
- H10N30/2045—Cantilevers, i.e. having one fixed end adapted for in-plane bending displacement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
Landscapes
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Claims (2)
- 互いに対向する第一及び第二電極と、
前記第一電極と前記第二電極との間に配置された第一圧電体層と、
前記第一圧電体層を貫通し、前記第一電極と前記第二電極とに接続された複数の第一スルーホール導体と、
前記第一圧電体層を介して前記第一電極と対向し、前記第一及び第二電極とは異なる極性の電圧が印加される第四電極と、
前記第二電極を介して前記第一圧電体層と対向する第二圧電体層と、
前記第二圧電体層を介して前記第二電極及び第四電極と対向する第三電極と、
前記第二圧電体層を貫通し、前記第二電極と前記第三電極とに接続された複数の第二スルーホール導体と、を備え、
前記第一及び第二電極の対向方向から見て、前記複数の第一スルーホール導体は、行列状に配列されており、
前記対向方向から見て、前記複数の第一スルーホール導体と前記複数の第二スルーホール導体とは互いに離間するように配置されており、
前記対向方向から見て、前記複数の第一スルーホール導体により画定される領域は、前記複数の第二スルーホール導体により画定される領域と重なっている、圧電素子。 - 前記対向方向から見て、前記複数の第一スルーホール導体により画定される領域は、n角形状(nは4以上の整数)を呈している、請求項1に記載の圧電素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016191737A JP6825290B2 (ja) | 2016-09-29 | 2016-09-29 | 圧電素子 |
CN201710888135.XA CN107887499B (zh) | 2016-09-29 | 2017-09-27 | 压电元件 |
US15/720,288 US10770641B2 (en) | 2016-09-29 | 2017-09-29 | Piezoelectric element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016191737A JP6825290B2 (ja) | 2016-09-29 | 2016-09-29 | 圧電素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018056374A JP2018056374A (ja) | 2018-04-05 |
JP6825290B2 true JP6825290B2 (ja) | 2021-02-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016191737A Active JP6825290B2 (ja) | 2016-09-29 | 2016-09-29 | 圧電素子 |
Country Status (3)
Country | Link |
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US (1) | US10770641B2 (ja) |
JP (1) | JP6825290B2 (ja) |
CN (1) | CN107887499B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP1565481S (ja) * | 2016-05-25 | 2016-12-19 | ||
JP1649916S (ja) * | 2019-05-20 | 2020-01-20 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5381385A (en) * | 1993-08-04 | 1995-01-10 | Hewlett-Packard Company | Electrical interconnect for multilayer transducer elements of a two-dimensional transducer array |
US6595628B2 (en) * | 2001-02-19 | 2003-07-22 | Brother Kogyo Kabushiki Kaisha | Laminated piezoelectric element for use as a drive device |
JP4057520B2 (ja) * | 2003-12-24 | 2008-03-05 | Tdk株式会社 | 電子部品 |
JP4243850B2 (ja) | 2004-05-11 | 2009-03-25 | ブラザー工業株式会社 | 積層型圧電素子及びそれを備えたインクジェット記録ヘッド |
JP4670260B2 (ja) * | 2004-05-25 | 2011-04-13 | Tdk株式会社 | 積層型電子部品 |
DE102005015600A1 (de) * | 2005-04-05 | 2006-10-12 | Epcos Ag | Piezoelektrischer Transformator |
JP5194386B2 (ja) * | 2006-06-03 | 2013-05-08 | ブラザー工業株式会社 | 積層型圧電アクチュエータ |
JP5175853B2 (ja) * | 2006-09-25 | 2013-04-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | フリップチップ相互接続貫通チップビア |
JP5298999B2 (ja) * | 2009-03-19 | 2013-09-25 | Tdk株式会社 | 積層型圧電素子 |
KR20160026510A (ko) | 2014-09-01 | 2016-03-09 | 삼성전기주식회사 | 압전소자 및 이를 포함하는 압전진동모듈 |
-
2016
- 2016-09-29 JP JP2016191737A patent/JP6825290B2/ja active Active
-
2017
- 2017-09-27 CN CN201710888135.XA patent/CN107887499B/zh active Active
- 2017-09-29 US US15/720,288 patent/US10770641B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107887499A (zh) | 2018-04-06 |
US10770641B2 (en) | 2020-09-08 |
JP2018056374A (ja) | 2018-04-05 |
US20180090667A1 (en) | 2018-03-29 |
CN107887499B (zh) | 2021-10-19 |
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