JP6814915B2 - 強誘電体メモリ及びその製造方法、強誘電体膜及びその製造方法 - Google Patents
強誘電体メモリ及びその製造方法、強誘電体膜及びその製造方法 Download PDFInfo
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- JP6814915B2 JP6814915B2 JP2015185204A JP2015185204A JP6814915B2 JP 6814915 B2 JP6814915 B2 JP 6814915B2 JP 2015185204 A JP2015185204 A JP 2015185204A JP 2015185204 A JP2015185204 A JP 2015185204A JP 6814915 B2 JP6814915 B2 JP 6814915B2
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- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015185204A JP6814915B2 (ja) | 2015-09-18 | 2015-09-18 | 強誘電体メモリ及びその製造方法、強誘電体膜及びその製造方法 |
| TW105123767A TWI706581B (zh) | 2015-09-18 | 2016-07-27 | 強介電體記憶體及其製造方法，強介電體膜及其製造方法 |
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| JP2015185204A JP6814915B2 (ja) | 2015-09-18 | 2015-09-18 | 強誘電体メモリ及びその製造方法、強誘電体膜及びその製造方法 |
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| Publication Number | Publication Date |
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| JP2017059751A JP2017059751A (ja) | 2017-03-23 |
| JP6814915B2 true JP6814915B2 (ja) | 2021-01-20 |
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| Country | Link |
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| JP (1) | JP6814915B2 (zh) |
| TW (1) | TWI706581B (zh) |
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| JPWO2018216227A1 (ja) * | 2017-05-26 | 2020-03-26 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
| JP6881790B2 (ja) * | 2017-05-26 | 2021-06-02 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
| KR102433290B1 (ko) * | 2018-02-08 | 2022-08-17 | 에스케이하이닉스 주식회사 | 강유전성 소자의 제조 방법 |
| US10702940B2 (en) | 2018-08-20 | 2020-07-07 | Samsung Electronics Co., Ltd. | Logic switching device and method of manufacturing the same |
| WO2020179210A1 (ja) * | 2019-03-07 | 2020-09-10 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体、圧電体膜及び超伝導体膜 |
| KR20210035553A (ko) | 2019-09-24 | 2021-04-01 | 삼성전자주식회사 | 도메인 스위칭 소자 및 그 제조방법 |
| WO2021131311A1 (ja) * | 2019-12-25 | 2021-07-01 | 株式会社デンソー | 圧電素子、圧電装置、および圧電素子の製造方法 |
| TWI775427B (zh) | 2021-05-07 | 2022-08-21 | 財團法人工業技術研究院 | 鐵電記憶體 |
| JP2023070575A (ja) | 2021-11-09 | 2023-05-19 | 富士フイルム株式会社 | 圧電積層体、圧電素子及び圧電積層体の製造方法 |
| WO2023089440A1 (ja) * | 2021-11-18 | 2023-05-25 | 株式会社半導体エネルギー研究所 | 記憶素子、記憶装置 |
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| JP3472087B2 (ja) * | 1997-06-30 | 2003-12-02 | Ｔｄｋ株式会社 | 膜構造体、電子デバイス、記録媒体および酸化物導電性薄膜の製造方法 |
| JP2002043538A (ja) * | 2000-07-27 | 2002-02-08 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| US6503763B2 (en) * | 2001-03-27 | 2003-01-07 | Sharp Laboratories Of America, Inc. | Method of making MFMOS capacitors with high dielectric constant materials |
| JP4178888B2 (ja) * | 2002-09-04 | 2008-11-12 | セイコーエプソン株式会社 | 強誘電体デバイスの作製方法、およびそれを用いた強誘電体メモリ、圧電素子、インクジェット式ヘッドおよびインクジェットプリンタ |
| JP4164701B2 (ja) * | 2006-05-31 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体キャパシタ、強誘電体キャパシタの製造方法、強誘電体メモリおよび強誘電体メモリの製造方法 |
| JP5410686B2 (ja) * | 2008-03-21 | 2014-02-05 | 富士フイルム株式会社 | 圧電体膜の製造方法、成膜装置および圧電体膜 |
| JP5930852B2 (ja) * | 2012-06-04 | 2016-06-08 | 株式会社ユーテック | 強誘電体結晶膜の製造方法 |
| JP6167657B2 (ja) * | 2013-05-13 | 2017-07-26 | 三菱マテリアル株式会社 | 強誘電体膜付きシリコン基板 |
| US9818869B2 (en) * | 2013-07-25 | 2017-11-14 | National Institute Of Advanced Industrial Science And Technology | Ferroelectric device and method of its manufacture |
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- 2015-09-18 JP JP2015185204A patent/JP6814915B2/ja active Active
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- 2016-07-27 TW TW105123767A patent/TWI706581B/zh active
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| Publication number | Publication date |
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| TW201724588A (zh) | 2017-07-01 |
| TWI706581B (zh) | 2020-10-01 |
| JP2017059751A (ja) | 2017-03-23 |
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