JP6807767B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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JP6807767B2
JP6807767B2 JP2017019642A JP2017019642A JP6807767B2 JP 6807767 B2 JP6807767 B2 JP 6807767B2 JP 2017019642 A JP2017019642 A JP 2017019642A JP 2017019642 A JP2017019642 A JP 2017019642A JP 6807767 B2 JP6807767 B2 JP 6807767B2
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insulator
transistor
oxide
conductor
oxygen
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JP2017147443A5 (Direct
JP2017147443A (ja
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山崎　舜平
舜平 山崎
佑太 遠藤
佑太 遠藤
加藤　清
清 加藤
岡本　悟
悟 岡本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
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    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115799342A (zh) 2016-07-26 2023-03-14 株式会社半导体能源研究所 半导体装置
JP7167038B2 (ja) * 2017-09-15 2022-11-08 株式会社半導体エネルギー研究所 半導体装置
US11222945B2 (en) 2017-12-29 2022-01-11 Texas Instruments Incorporated High voltage isolation structure and method
WO2019197946A1 (ja) 2018-04-12 2019-10-17 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US10727275B2 (en) * 2018-05-18 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Memory layout for reduced line loading
US10304836B1 (en) * 2018-07-18 2019-05-28 Xerox Corporation Protective layers for high-yield printed electronic devices
US10741638B2 (en) * 2018-08-08 2020-08-11 Infineon Technologies Austria Ag Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
JP7355752B2 (ja) * 2018-10-05 2023-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10707296B2 (en) 2018-10-10 2020-07-07 Texas Instruments Incorporated LOCOS with sidewall spacer for different capacitance density capacitors
JP2020072191A (ja) * 2018-10-31 2020-05-07 キオクシア株式会社 半導体記憶装置
US11849572B2 (en) * 2019-01-14 2023-12-19 Intel Corporation 3D 1T1C stacked DRAM structure and method to fabricate
WO2020163984A1 (en) 2019-02-11 2020-08-20 Yangtze Memory Technologies Co., Ltd. Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same
US11791221B2 (en) * 2019-02-22 2023-10-17 Intel Corporation Integration of III-N transistors and semiconductor layer transfer
WO2020179494A1 (ja) 2019-03-07 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 半導体装置および撮像装置
JP7516786B2 (ja) 2019-06-21 2024-07-17 株式会社村田製作所 半導体装置及びその製造方法
US12376410B2 (en) 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
CN114127932B (zh) * 2019-07-12 2026-01-23 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
US12156410B2 (en) 2019-08-09 2024-11-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US11437416B2 (en) * 2019-09-10 2022-09-06 Taiwan Semiconductor Manufacturing Company, Ltd. Pixel device layout to reduce pixel noise
US11107820B2 (en) * 2019-09-13 2021-08-31 Nanya Technology Corporation Semiconductor device and method for fabricating the same
CN110993607B (zh) * 2019-11-21 2022-12-16 长江存储科技有限责任公司 具有阻挡结构的存储器件及其制备方法
CN111128721A (zh) * 2019-12-04 2020-05-08 长江存储科技有限责任公司 存储器的制作方法及存储器
CN114144886B (zh) * 2020-05-15 2023-01-31 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
US20230179110A1 (en) * 2020-05-22 2023-06-08 Marel Power Solutions, Inc. Compact power converter
US11610999B2 (en) * 2020-06-10 2023-03-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Floating-gate devices in high voltage applications
JP7756646B2 (ja) * 2020-08-19 2025-10-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11728272B2 (en) * 2021-03-31 2023-08-15 Taiwan Semiconductor Manufacturing Company Limited Plasma-damage-resistant interconnect structure and methods for manufacturing the same
US20250142861A1 (en) * 2021-08-13 2025-05-01 The Hong Kong University Of Science And Technology Semiconductor device and method for manufacturing the same
JP2023067454A (ja) * 2021-11-01 2023-05-16 ソニーセミコンダクタソリューションズ株式会社 半導体装置、電子機器、及び半導体装置の製造方法
TWI802321B (zh) * 2022-03-17 2023-05-11 新唐科技股份有限公司 橫向雙擴散金氧半導體裝置
CN116209249B (zh) * 2022-08-08 2024-02-20 北京超弦存储器研究院 动态存储器、其制作方法、读取方法及存储装置
WO2024042997A1 (ja) * 2022-08-25 2024-02-29 株式会社ジャパンディスプレイ 酸化物半導体膜、薄膜トランジスタ、および電子機器
KR102891038B1 (ko) * 2023-08-29 2025-11-28 (주)피코셈 반도체 디바이스 및 그 제조 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431155C (zh) * 2004-06-28 2008-11-05 富士通株式会社 半导体器件及其制造方法
JP2008010758A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd 半導体装置及びその製造方法
KR101591613B1 (ko) 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101829074B1 (ko) 2009-10-29 2018-02-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101939712B1 (ko) 2009-10-29 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101470303B1 (ko) 2009-12-08 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101804589B1 (ko) * 2009-12-11 2018-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2012017843A1 (en) 2010-08-06 2012-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
WO2013089115A1 (en) * 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9735280B2 (en) * 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
US8981370B2 (en) * 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102270823B1 (ko) * 2013-10-22 2021-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102244460B1 (ko) 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG11201604650SA (en) * 2013-12-26 2016-07-28 Semiconductor Energy Lab Semiconductor device
KR102325158B1 (ko) * 2014-01-30 2021-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기, 및 반도체 장치의 제작 방법
TWI663733B (zh) 2014-06-18 2019-06-21 日商半導體能源研究所股份有限公司 電晶體及半導體裝置
WO2016009310A1 (en) * 2014-07-15 2016-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
KR20160034200A (ko) 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016066788A (ja) 2014-09-19 2016-04-28 株式会社半導体エネルギー研究所 半導体膜の評価方法および半導体装置の作製方法
KR20160114511A (ko) * 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10460984B2 (en) 2015-04-15 2019-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating electrode and semiconductor device
WO2017081579A1 (en) * 2015-11-13 2017-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6917700B2 (ja) * 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
JP6884569B2 (ja) * 2015-12-25 2021-06-09 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP6851814B2 (ja) * 2015-12-29 2021-03-31 株式会社半導体エネルギー研究所 トランジスタ
US9923001B2 (en) 2016-01-15 2018-03-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10700212B2 (en) * 2016-01-28 2020-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method thereof

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US10367005B2 (en) 2019-07-30
KR20180124032A (ko) 2018-11-20
US20180254291A1 (en) 2018-09-06
CN108886021A (zh) 2018-11-23
US9978774B2 (en) 2018-05-22
TWI730041B (zh) 2021-06-11
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JP2017147443A (ja) 2017-08-24
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