JP6789675B2 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

Info

Publication number
JP6789675B2
JP6789675B2 JP2016111145A JP2016111145A JP6789675B2 JP 6789675 B2 JP6789675 B2 JP 6789675B2 JP 2016111145 A JP2016111145 A JP 2016111145A JP 2016111145 A JP2016111145 A JP 2016111145A JP 6789675 B2 JP6789675 B2 JP 6789675B2
Authority
JP
Japan
Prior art keywords
layer
light emitting
substrate
modified layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016111145A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017216423A5 (enExample
JP2017216423A (ja
Inventor
啓誉 小渕
啓誉 小渕
一陽 堤
一陽 堤
秀晃 安斉
秀晃 安斉
敬雄 藤盛
敬雄 藤盛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2016111145A priority Critical patent/JP6789675B2/ja
Priority to US15/610,983 priority patent/US10497831B2/en
Publication of JP2017216423A publication Critical patent/JP2017216423A/ja
Publication of JP2017216423A5 publication Critical patent/JP2017216423A5/ja
Application granted granted Critical
Publication of JP6789675B2 publication Critical patent/JP6789675B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Led Devices (AREA)
JP2016111145A 2016-06-02 2016-06-02 半導体発光素子およびその製造方法 Active JP6789675B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016111145A JP6789675B2 (ja) 2016-06-02 2016-06-02 半導体発光素子およびその製造方法
US15/610,983 US10497831B2 (en) 2016-06-02 2017-06-01 Semiconductor light emitting element and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016111145A JP6789675B2 (ja) 2016-06-02 2016-06-02 半導体発光素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2017216423A JP2017216423A (ja) 2017-12-07
JP2017216423A5 JP2017216423A5 (enExample) 2019-03-14
JP6789675B2 true JP6789675B2 (ja) 2020-11-25

Family

ID=60483511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016111145A Active JP6789675B2 (ja) 2016-06-02 2016-06-02 半導体発光素子およびその製造方法

Country Status (2)

Country Link
US (1) US10497831B2 (enExample)
JP (1) JP6789675B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388526B1 (en) 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US10896815B2 (en) 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
US11121035B2 (en) 2018-05-22 2021-09-14 Semiconductor Components Industries, Llc Semiconductor substrate processing methods
US20190363018A1 (en) 2018-05-24 2019-11-28 Semiconductor Components Industries, Llc Die cleaning systems and related methods
US11830771B2 (en) 2018-05-31 2023-11-28 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
KR102511747B1 (ko) * 2021-07-16 2023-03-20 주식회사 글로벌테크놀로지 Led 패키지, 상기 led 패키지에 실장되는 반도체 칩 및 그의 제조 방법
WO2024024272A1 (ja) * 2022-07-26 2024-02-01 ソニーグループ株式会社 発光装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3795007B2 (ja) * 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US7863630B2 (en) * 2005-07-05 2011-01-04 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP2007130768A (ja) * 2005-11-08 2007-05-31 Seiko Epson Corp 水晶基板の切断方法
JP2011243875A (ja) * 2010-05-20 2011-12-01 Disco Abrasive Syst Ltd サファイアウェーハの分割方法
JP2013004741A (ja) * 2011-06-16 2013-01-07 Toshiba Corp 半導体発光素子
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP5886603B2 (ja) * 2011-11-11 2016-03-16 株式会社ディスコ 光デバイスウエーハの加工方法
JP5988600B2 (ja) 2012-02-10 2016-09-07 株式会社ディスコ サファイアウェーハの分割方法
JP6199281B2 (ja) * 2012-03-23 2017-09-20 シャープ株式会社 半導体発光素子、半導体発光素子の製造方法、半導体発光装置及び基板
TWI581451B (zh) * 2012-05-21 2017-05-01 晶元光電股份有限公司 光電元件及其製造方法
JP2014017283A (ja) * 2012-07-05 2014-01-30 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP6047989B2 (ja) * 2012-08-07 2016-12-21 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP6034097B2 (ja) * 2012-08-28 2016-11-30 株式会社ディスコ レーザー加工装置
JP6040769B2 (ja) * 2012-12-28 2016-12-07 日亜化学工業株式会社 発光素子及びその製造方法
JP6187156B2 (ja) * 2013-10-29 2017-08-30 日亜化学工業株式会社 窒化物半導体素子の製造方法
KR102357289B1 (ko) * 2014-07-01 2022-02-03 서울바이오시스 주식회사 발광 소자

Also Published As

Publication number Publication date
US10497831B2 (en) 2019-12-03
JP2017216423A (ja) 2017-12-07
US20170352781A1 (en) 2017-12-07

Similar Documents

Publication Publication Date Title
JP6789675B2 (ja) 半導体発光素子およびその製造方法
JP7248934B2 (ja) 発光装置
CN104022216B (zh) 发光装置
JP5421001B2 (ja) 発光素子及びその製造方法
CN111129255B (zh) 发光二极管
JP6261718B2 (ja) 発光半導体素子および発光半導体素子の製造方法
US9484498B2 (en) Light emitting structure having electrodes forming a concave surface and manufacturing method thereof
TWI517459B (zh) 半導體發光裝置及其製造方法
US9799808B2 (en) Light emitting element and light emitting element package
US12027657B2 (en) Light emitting diode, light emitting diode module, and display device including the same
JP2016039324A (ja) 発光装置及び発光装置の製造方法
US10804424B2 (en) Method for manufacturing light emitting element
KR102734057B1 (ko) 광 차단층을 가지는 발광 다이오드
JP2019212695A (ja) キャップの製造方法と、発光装置及びその製造方法
TWI807028B (zh) 發光元件以及其製造方法
JP2017038024A (ja) 半導体発光素子およびその製造方法、ならびに、半導体発光素子を備えた発光素子パッケージおよび発光装置
KR20150018481A (ko) 반도체 발광소자 및 이를 제조하는 방법
JP6508189B2 (ja) 発光装置
KR101629403B1 (ko) 반도체 발광소자 및 이를 제조하는 방법
CN107425099B (zh) 发光元件
JP7007561B2 (ja) 発光装置及びその製造方法
JP6269901B1 (ja) 発光装置
WO2017208326A1 (ja) 発光装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190130

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190521

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200528

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200611

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200803

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201029

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201104

R150 Certificate of patent or registration of utility model

Ref document number: 6789675

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250