JP6789675B2 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
JP6789675B2
JP6789675B2 JP2016111145A JP2016111145A JP6789675B2 JP 6789675 B2 JP6789675 B2 JP 6789675B2 JP 2016111145 A JP2016111145 A JP 2016111145A JP 2016111145 A JP2016111145 A JP 2016111145A JP 6789675 B2 JP6789675 B2 JP 6789675B2
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layer
light emitting
substrate
modified layer
emitting device
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Japanese (ja)
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JP2017216423A5 (enExample
JP2017216423A (ja
Inventor
啓誉 小渕
啓誉 小渕
一陽 堤
一陽 堤
秀晃 安斉
秀晃 安斉
敬雄 藤盛
敬雄 藤盛
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2016111145A priority Critical patent/JP6789675B2/ja
Priority to US15/610,983 priority patent/US10497831B2/en
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Publication of JP2017216423A5 publication Critical patent/JP2017216423A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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JP2016111145A 2016-06-02 2016-06-02 半導体発光素子およびその製造方法 Active JP6789675B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016111145A JP6789675B2 (ja) 2016-06-02 2016-06-02 半導体発光素子およびその製造方法
US15/610,983 US10497831B2 (en) 2016-06-02 2017-06-01 Semiconductor light emitting element and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016111145A JP6789675B2 (ja) 2016-06-02 2016-06-02 半導体発光素子およびその製造方法

Publications (3)

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JP2017216423A JP2017216423A (ja) 2017-12-07
JP2017216423A5 JP2017216423A5 (enExample) 2019-03-14
JP6789675B2 true JP6789675B2 (ja) 2020-11-25

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US (1) US10497831B2 (enExample)
JP (1) JP6789675B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388526B1 (en) 2018-04-20 2019-08-20 Semiconductor Components Industries, Llc Semiconductor wafer thinning systems and related methods
US10896815B2 (en) 2018-05-22 2021-01-19 Semiconductor Components Industries, Llc Semiconductor substrate singulation systems and related methods
US11121035B2 (en) 2018-05-22 2021-09-14 Semiconductor Components Industries, Llc Semiconductor substrate processing methods
US20190363018A1 (en) 2018-05-24 2019-11-28 Semiconductor Components Industries, Llc Die cleaning systems and related methods
US11830771B2 (en) 2018-05-31 2023-11-28 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
US10468304B1 (en) 2018-05-31 2019-11-05 Semiconductor Components Industries, Llc Semiconductor substrate production systems and related methods
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
KR102511747B1 (ko) * 2021-07-16 2023-03-20 주식회사 글로벌테크놀로지 Led 패키지, 상기 led 패키지에 실장되는 반도체 칩 및 그의 제조 방법
US20260006949A1 (en) * 2022-07-26 2026-01-01 Sony Group Corporation Light emitting apparatus
KR102971393B1 (ko) * 2024-05-27 2026-06-10 웨이브로드 주식회사 핫 셀프스플릿 공정을 통한 박막형 칩 구조의 고출력 자외선 발광소자 및 그 제조방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3795007B2 (ja) * 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
US7223998B2 (en) * 2004-09-10 2007-05-29 The Regents Of The University Of California White, single or multi-color light emitting diodes by recycling guided modes
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
WO2007004745A1 (en) * 2005-07-05 2007-01-11 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP2007130768A (ja) * 2005-11-08 2007-05-31 Seiko Epson Corp 水晶基板の切断方法
JP2011243875A (ja) * 2010-05-20 2011-12-01 Disco Abrasive Syst Ltd サファイアウェーハの分割方法
JP2013004741A (ja) * 2011-06-16 2013-01-07 Toshiba Corp 半導体発光素子
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP5886603B2 (ja) * 2011-11-11 2016-03-16 株式会社ディスコ 光デバイスウエーハの加工方法
JP5988600B2 (ja) * 2012-02-10 2016-09-07 株式会社ディスコ サファイアウェーハの分割方法
US20140353705A1 (en) * 2012-03-23 2014-12-04 Sharp Kabushiki Kaisha Semiconductor light emitting element, method of manufacturing semiconductor light emitting element, semiconductor light emitting device and substrate
TWI581451B (zh) * 2012-05-21 2017-05-01 晶元光電股份有限公司 光電元件及其製造方法
JP2014017283A (ja) * 2012-07-05 2014-01-30 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP6047989B2 (ja) * 2012-08-07 2016-12-21 日亜化学工業株式会社 半導体発光素子及びその製造方法
JP6034097B2 (ja) * 2012-08-28 2016-11-30 株式会社ディスコ レーザー加工装置
JP6040769B2 (ja) * 2012-12-28 2016-12-07 日亜化学工業株式会社 発光素子及びその製造方法
JP6187156B2 (ja) * 2013-10-29 2017-08-30 日亜化学工業株式会社 窒化物半導体素子の製造方法
KR102357289B1 (ko) * 2014-07-01 2022-02-03 서울바이오시스 주식회사 발광 소자

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US10497831B2 (en) 2019-12-03
US20170352781A1 (en) 2017-12-07
JP2017216423A (ja) 2017-12-07

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