JP6777243B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP6777243B2 JP6777243B2 JP2019549133A JP2019549133A JP6777243B2 JP 6777243 B2 JP6777243 B2 JP 6777243B2 JP 2019549133 A JP2019549133 A JP 2019549133A JP 2019549133 A JP2019549133 A JP 2019549133A JP 6777243 B2 JP6777243 B2 JP 6777243B2
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/21—Bonding by welding
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Description
本発明はこのような点に鑑みてなされたものであり、装置内部の損傷を抑制して配線部材間を適切に接合することができる半導体装置及び半導体装置の製造方法を提供することを目的とする。
また、このような半導体装置は、前記第1配線部材に前記第2配線部材が接合面で重なって接合されて、前記接合面に直交する前記第1配線部材及び前記第2配線部材のそれぞれの一方の端部上に前記照射領域が設けられ、前記照射領域に対向する前記第1配線部材及び前記第2配線部材のそれぞれの他方の端部上の前記対向領域に前記保護部材が配置される。
また、前記第1配線部材及び前記第2配線部材は、銅、アルミニウム、少なくともこれらの一種を含む合金またはステンレス鋼である。
また、本発明の一観点によれば、半導体素子と、第1配線部材と、第2配線部材と、前記第2配線部材よりも融点が高い保護部材とを用意する工程と、前記第1配線部材及び前記第2配線部材を重ねてレーザ光を照射する際に、重ねられた前記第1配線部材及び前記第2配線部材における前記レーザ光が照射される照射領域に対向する対向領域に、予め前記保護部材を配置する工程と、前記半導体素子と、前記第1配線部材と前記第2配線部材の少なくともいずれか一方とを電気的に接続する工程と、前記第1配線部材及び前記第2配線部材を重ねる工程と、前記照射領域に前記レーザ光を照射する工程と、を有する半導体装置の製造方法が提供される。
[第1の実施の形態]
第1の実施の形態の溶接方法について、図1を用いて説明する。
図2及び図3は、第1の実施の形態の溶接方法で用いられる材質の一例を示す図である。なお、図2及び図3の実施例1〜47では、図1に示した第1配線部材1aと第2配線部材2aと保護部材3(及び接合部材3a)に対する材質の組み合わせとレーザ光4の入熱量とその際の溶接状況を示している。但し、実施例1〜6,20〜25,31,32,36,40,44は、保護部材3を用いずに溶接した場合の参考例を示している。また、実施例1〜47の第1配線部材1aと第2配線部材2aと保護部材3(及び接合部材3a)として用いる材質及びその厚さ、レーザ光4の入熱量は一例であり、その他の材質及びその厚さ、レーザ光4の入熱量を適用することが可能である。
第1の実施の形態(図1)では、それぞれ平板状である第1配線部材1a及び第2配線部材2aを溶接する場合について説明した。上記の溶接方法は、第1配線部材1a及び第2配線部材2aが平板状でなくても、例えば、以下の図4で説明するような場合にも適用することができる。
第3の実施の形態では、第2の実施の形態とは別の形態について、図5を用いて説明する。
第4の実施の形態では、第1〜第3の実施の形態の場合とは異なり、例えば、半導体装置の製造過程において、半導体装置に含まれる配線端子に、別の配線部材を溶接するような場合について図6を用いて説明する。
第5の実施の形態では、第1の実施の形態の溶接方法を含む製造方法が用いられた半導体装置について説明する。
半導体装置100は、ケース110と、ケース110の収納部112a,112b,112cにそれぞれ収納されたセラミック回路基板140とを含む。半導体装置100は、P端子113a,113b,113cに正極が、N端子114a,114b,114cに負極がそれぞれ接続される。さらに、半導体装置100は、各制御端子121,131に制御信号が印加されて、U端子115a、V端子115b、W端子115cから制御信号に応じた出力が得られるものである。
回路板142a,142bは、導電性並びにはんだに対する濡れ性に優れた金属材質により構成されている。このような材質として、例えば、銀、銅、または、少なくともこれらの一種を含む合金等により構成されている。また、回路板142a,142bは、耐食性に優れた材質によりめっき処理を行うことも可能である。このような材質は、例えば、アルミニウム、ニッケル、チタン、クロム、モリブデン、タンタル、ニオブ、タングステン、バナジウム(V)、ビスマス(Bi)、ジルコニウム(Zr)、ハフニウム(Hf)、金、白金、パラジウム(Pd)、または、少なくともこれらの一種を含む合金等である。
このような構成を有するセラミック回路基板140として、例えば、DCB(Direct Copper Bonding)基板、AMB(Active Metal Blazed)基板を用いることができる。セラミック回路基板140は、半導体素子144a,144b,144c,146a,146b,146cで発生した熱を回路板142a,142b、絶縁板141及び金属板を介して、下方に伝導させることができる。
回路板142b上には、例えば、半導体素子146a,146b,146c(のコレクタ電極側)がはんだを介して一列に配置されている。さらに、一列に配置された半導体素子146a,146b,146cの各エミッタ電極に第2配線部材145bがはんだを介して配置されて、半導体素子146a,146b,146cの各エミッタ電極が電気的に接続されている。
平板部145baは、各半導体素子と電気的に接続した各端子部145bbと、段差部145bcを介して接続する。図示した例では、平板部145baの主面と端子部145bbの主面は略直交し、段差部145bcはこれら2つの主面と略平行な面を有しており、第2配線部材145bの一断面はジグザグ形状になっている。
また、図示した例では、半導体素子144a,144b,144cが電気的に並列接続され、また、半導体素子146a,146b,146cが電気的に並列接続されている。半導体素子の数は、半導体装置の容量に応じて増減しうる。また、セラミック回路基板140では、設置したプレート147で半導体素子144a,144b,144c,146a,146b,146cの回路板142a,142bに対する位置合わせを行って、第2配線部材145a,145bが設置される。
図10は、第5の実施の形態の半導体装置に含まれるセラミック回路基板に接合された配線基板の断面図である。なお、図10は、図7における一点鎖線X−Xにおける断面図を表している。
2a 第2配線部材
3 保護部材
3a 接合部材
4 レーザ光
5 溶接部
6 照射領域
7 対向領域
8 接合面
Claims (10)
- 半導体素子と、
前記半導体素子に電気的に接続され、互いに接合された第1配線部材及び第2配線部材と、
接合された前記第1配線部材及び前記第2配線部材におけるレーザ光が照射された照射領域に対向する対向領域に配置され、前記対向領域を構成する前記第1配線部材及び前記第2配線部材のうち少なくとも一方よりも融点が高い保護部材と、
を有する半導体装置。 - 前記第1配線部材に前記第2配線部材が接合面で接合されて、
前記接合面に対向する前記第1配線部材の第1主面上に前記照射領域が設けられ、
前記接合面に対向する前記第2配線部材の第2主面上の前記対向領域に前記保護部材が配置される、
請求項1に記載の半導体装置。 - 前記第1配線部材及び前記第2配線部材の間には1つ以上の配線部材が積層されている、
請求項2に記載の半導体装置。 - 前記第1配線部材に前記第2配線部材が接合面で接合されて、
前記接合面に直交する前記第1配線部材及び前記第2配線部材のそれぞれの一方の端部上に前記照射領域が設けられ、
前記照射領域に対向する前記第1配線部材及び前記第2配線部材のそれぞれの他方の端部上の前記対向領域に前記保護部材が配置される、
請求項1に記載の半導体装置。 - 前記保護部材は、コバルト、チタン、白金、クロム、モリブデン、タンタル、タングステン、ニオブ、少なくともこれらの一種を含む合金、またはセラミックスにより構成されている、
請求項1に記載の半導体装置。 - 前記セラミックスは、酸化アルミニウム、酸化ジルコニウム、酸化ケイ素、炭化ケイ素、炭化ホウ素、炭化タングステン、炭化タンタル、窒化アルミニウム、窒化ケイ素、窒化チタン、窒化タンタルのいずれかである、
請求項5に記載の半導体装置。 - 接合された前記第1配線部材及び前記第2配線部材に、接合部材を介して前記保護部材を配置する、
請求項1に記載の半導体装置。 - 前記第1配線部材及び前記第2配線部材は、銅、アルミニウム、少なくともこれらの一種を含む合金またはステンレス鋼である、
請求項1に記載の半導体装置。 - 前記対向領域を構成する前記第1配線部材及び前記第2配線部材のうち少なくとも一方と前記保護部材との融点差は、500℃以上である、
請求項1に記載の半導体装置。 - 半導体素子と、第1配線部材と、第2配線部材と、前記第2配線部材よりも融点が高い保護部材とを用意する工程と、
前記第1配線部材及び前記第2配線部材を重ねてレーザ光を照射する際に、重ねられた前記第1配線部材及び前記第2配線部材における前記レーザ光が照射される照射領域に対向する対向領域に、予め前記保護部材を配置する工程と、
前記半導体素子と、前記第1配線部材と前記第2配線部材の少なくともいずれか一方とを電気的に接続する工程と、
前記第1配線部材及び前記第2配線部材を重ねる工程と、
前記照射領域に前記レーザ光を照射する工程と、
を有する半導体装置の製造方法。
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