JP6768776B2 - フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 - Google Patents
フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 Download PDFInfo
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- JP6768776B2 JP6768776B2 JP2018240673A JP2018240673A JP6768776B2 JP 6768776 B2 JP6768776 B2 JP 6768776B2 JP 2018240673 A JP2018240673 A JP 2018240673A JP 2018240673 A JP2018240673 A JP 2018240673A JP 6768776 B2 JP6768776 B2 JP 6768776B2
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- charge pump
- voltage
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- pump
- circuit
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/04—Nonvolatile memory cell provided with a separate control gate for erasing the cells, i.e. erase gate, independent of the normal read control gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本願は、米国特許法第119条及び第120条に基づいて、参照することにより本明細書に組み込まれる、2013年3月15日出願の米国特許仮出願第61/792,643号の優先権を主張するものである。
メモリ装置で使用するためのハイブリッドチャージポンプ及び制御回路が開示される。
Claims (7)
- フラッシュメモリ装置用のハイブリッドチャージポンプ制御回路であって、
第1の入力と、
第2の入力と、
第1のスイッチと、
第2のスイッチと、
前記第1の入力の電圧を降圧するためのトランジスタの第1のセットと、
前記第2の入力の電圧を昇圧するためのトランジスタの第2のセットと、
第1の基準電圧と、
第2の基準電圧と、
前記第1のスイッチがオンであり、前記第2のスイッチがオフであるとき、前記第1の基準電圧を前記トランジスタの第1のセットの出力と比較し、前記第1のスイッチがオフであり、前記第2のスイッチがオンであるとき、前記第2の基準電圧を前記トランジスタの第2のセットの出力と比較するためのコンパレータと、を備え、前記コンパレータがチャージポンプを制御するための出力を生成する、回路。 - 前記第1の入力の前記電圧が正である、請求項1に記載の回路。
- 前記第2の入力の前記電圧が負である、請求項2に記載の回路。
- 前記トランジスタの第1のセット内の各トランジスタがPMOSトランジスタである、請求項1に記載の回路。
- 前記トランジスタの第2のセット内の各トランジスタがPMOSトランジスタである、請求項4に記載の回路。
- 前記第1の基準電圧が第3のスイッチを通じて前記コンパレータと連結される、請求項1に記載の回路。
- 前記第2の基準電圧が第4のスイッチを通じて前記コンパレータと連結される、請求項6に記載の回路。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361792643P | 2013-03-15 | 2013-03-15 | |
US61/792,643 | 2013-03-15 | ||
US13/958,410 | 2013-08-02 | ||
US13/958,410 US8867281B2 (en) | 2013-03-15 | 2013-08-02 | Hybrid chargepump and regulation means and method for flash memory device |
Related Parent Applications (1)
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JP2018037122A Division JP2018117519A (ja) | 2013-03-15 | 2018-03-02 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
Related Child Applications (1)
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JP2020108559A Division JP7053723B2 (ja) | 2013-03-15 | 2020-06-24 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
Publications (2)
Publication Number | Publication Date |
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JP2019050730A JP2019050730A (ja) | 2019-03-28 |
JP6768776B2 true JP6768776B2 (ja) | 2020-10-14 |
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JP2015560181A Active JP6302492B2 (ja) | 2013-03-15 | 2014-01-14 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
JP2018037122A Pending JP2018117519A (ja) | 2013-03-15 | 2018-03-02 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
JP2018240673A Active JP6768776B2 (ja) | 2013-03-15 | 2018-12-25 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
JP2020108559A Active JP7053723B2 (ja) | 2013-03-15 | 2020-06-24 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
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JP2018037122A Pending JP2018117519A (ja) | 2013-03-15 | 2018-03-02 | フラッシュメモリ装置のハイブリッドチャージポンプ並びに調節手段及び方法 |
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US (1) | US8867281B2 (ja) |
EP (3) | EP4040438A1 (ja) |
JP (4) | JP6302492B2 (ja) |
KR (2) | KR101873180B1 (ja) |
CN (2) | CN109584914B (ja) |
TW (2) | TWI592934B (ja) |
WO (1) | WO2014149165A2 (ja) |
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US10847227B2 (en) | 2018-10-16 | 2020-11-24 | Silicon Storage Technology, Inc. | Charge pump for use in non-volatile flash memory devices |
US11810626B2 (en) * | 2022-02-11 | 2023-11-07 | Sandisk Technologies Llc | Generating boosted voltages with a hybrid charge pump |
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Also Published As
Publication number | Publication date |
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US8867281B2 (en) | 2014-10-21 |
JP2020195279A (ja) | 2020-12-03 |
JP2016514446A (ja) | 2016-05-19 |
WO2014149165A3 (en) | 2014-11-13 |
WO2014149165A2 (en) | 2014-09-25 |
TWI592934B (zh) | 2017-07-21 |
US20140269049A1 (en) | 2014-09-18 |
EP3428920A2 (en) | 2019-01-16 |
CN104937666A (zh) | 2015-09-23 |
JP2018117519A (ja) | 2018-07-26 |
KR101775256B1 (ko) | 2017-09-05 |
TW201631587A (zh) | 2016-09-01 |
JP6302492B2 (ja) | 2018-03-28 |
KR101873180B1 (ko) | 2018-06-29 |
WO2014149165A8 (en) | 2015-02-26 |
TWI529720B (zh) | 2016-04-11 |
CN104937666B (zh) | 2018-11-27 |
KR20170103024A (ko) | 2017-09-12 |
JP7053723B2 (ja) | 2022-04-12 |
EP3428920B1 (en) | 2022-04-27 |
EP2923357B1 (en) | 2018-08-01 |
CN109584914B (zh) | 2023-05-09 |
EP3428920A3 (en) | 2019-05-08 |
EP4040438A1 (en) | 2022-08-10 |
CN109584914A (zh) | 2019-04-05 |
EP2923357A2 (en) | 2015-09-30 |
TW201503135A (zh) | 2015-01-16 |
KR20150103183A (ko) | 2015-09-09 |
JP2019050730A (ja) | 2019-03-28 |
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