JP6768233B2 - 基材を疎水化する方法 - Google Patents
基材を疎水化する方法 Download PDFInfo
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- JP6768233B2 JP6768233B2 JP2019519671A JP2019519671A JP6768233B2 JP 6768233 B2 JP6768233 B2 JP 6768233B2 JP 2019519671 A JP2019519671 A JP 2019519671A JP 2019519671 A JP2019519671 A JP 2019519671A JP 6768233 B2 JP6768233 B2 JP 6768233B2
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- 239000000758 substrate Substances 0.000 title claims description 67
- 230000002209 hydrophobic effect Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims description 56
- 239000011261 inert gas Substances 0.000 claims description 31
- 150000007522 mineralic acids Chemical class 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 30
- 239000012686 silicon precursor Substances 0.000 claims description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 22
- 239000003960 organic solvent Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 12
- 239000001307 helium Substances 0.000 claims description 9
- 229910052734 helium Inorganic materials 0.000 claims description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 238000001035 drying Methods 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000004913 activation Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000008246 gaseous mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000003345 natural gas Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- 101100160821 Bacillus subtilis (strain 168) yxdJ gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- -1 organometallic silicon compound Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
a)基材の少なくとも1つの表面を、25℃〜35℃の温度で有機溶媒で清浄化することと、
基材の前記少なくとも1つの表面を、20℃〜30℃の温度で無機酸の溶液で処理することと、
基材の前記少なくとも1つの表面を不活性ガス雰囲気中で乾燥することと
を含む、基材の少なくとも1つの表面を準備するステップと、
b)基材の少なくとも1つの表面上にアモルファスシリコンを堆積させるステップと
を含む方法に関する。
本発明の発明者らは、基材表面(複数可)を有機溶媒で処理することが、様々な種類の汚染物質、不純物、積層から基材表面(複数可)を清浄化することを可能にし、それにより、アモルファスシリコンのコーティングが、望ましくない不純物又は積層上ではなく基材の表面上に直接堆積するので、機械的作用に対するより高い耐久性及び強度に加えて、基材の表面(複数可)のより高い均一性を有するコーティングを提供することが可能になることを見出した。
本発明の発明者らは、基材の表面(複数可)を無機酸の溶液で処理することが、アモルファスシリコン層の後続の堆積に対する表面(複数可)の活性化をもたらすことを見出した。基材の表面のこの活性化は、第一に、表面上の酸化物の含量を減少させ、そのことが、得られるコーティングの純度を改善し、第二に、酸化物層を除去することにより、得られるコーティングの密度を上昇させ、コーティングされる基材の層中への堆積したシリコンの拡散を減少させ、第三に、表面粗さを減少させ、それによって基材の表面へのアモルファスシリコンの接着力を増加させる。
基材の表面(複数可)の乾燥は、有機溶媒による清浄化、及び無機酸の溶液による表面(複数可)の処理の後に行われる。この乾燥は、有機溶媒及び無機酸溶液の残量を除去するために必要である。
基板の表面(複数可)上へのアモルファスシリコン層の堆積は、シリコン前駆体を不活性ガスとの混合物で基板表面(複数可)に供給し、続いて加熱によりこのシリコン前駆体が分解するステップを表す。
基材は、ステンレス鋼パイプであった。パイプの内側部及び外部表面をエタノールで29℃の温度で10分間清浄化し、次いで両方の表面を蒸留水で洗浄した。次に、パイプの表面をHNO3の1M溶液で25℃の温度で30分間処理し、次いで再び蒸留水で洗浄した。次いでパイプの表面を気体窒素流で200℃の温度で乾燥した。清浄化した乾燥パイプを疎水化用装置に導入し、ガス状混合物をパイプの内側部に供給するための対応する管に接続し、ガス状混合物をパイプの外部表面に供給するための対応する管に接続した。水素化ケイ素を含むガス状混合物並びにアルゴン及びヘリウムの混合物を、20体積%の水素化ケイ素の量で、管の内側部及びパイプの外部表面に供給した。ガス状混合物の供給を、バルブの調節によって調節した。ガス混合物の安定フローモードに到達した後、誘導加熱器を作動させ、誘導加熱によりパイプ表面を600℃に加熱した。パイプをこの温度で約5分間エージングした。5分後、パイプの内側部及びパイプの外部表面をアルゴン及びヘリウム流でパージした。このプロセスを4回繰り返して、400nmのコーティング厚さとした。
エージング後のガスの混合物を、不活性ガス(アルゴン及びヘリウムの混合物)と1:2の「不活性ガス:水素化ケイ素」の比で混合し、更なる量の水素化ケイ素と混合した後に、再びパイプ内部分及び外部表面上に導いたことを除き、プロセスを実施例1と同様の手法で行った。
堆積を、初めにパイプの内側部、次いでパイプの外部表面上で行ったことを除き、プロセスを実施例1と同様の手法で行った。
Claims (17)
- 基材上にアモルファスシリコンコーティングを設ける方法であって、
a)(i)前記基材の少なくとも1つの表面を、25℃〜35℃の温度で有機溶媒で清浄化することと、
(ii)前記清浄化の後に前記基材の前記少なくとも1つの表面を、20℃〜30℃の温度で無機酸の溶液で処理することと、
(iii)前記無機酸の前記溶液による前記処理の後に前記基材の前記少なくとも1つの表面を200〜300℃の温度で10〜30分間不活性ガス雰囲気中で乾燥して前記有機溶媒及び前記無機酸の溶液の残量を除去することと、を、上記の順に含む、前記基材の少なくとも1つの表面を準備するステップと、
b)前記基材の少なくとも1つの表面上にアモルファスシリコンを堆積させるステップと、を含み、
前記無機酸の前記溶液中の前記無機酸の濃度が1mol・L −1 であり、
前記基材は金属材料製である、(ただし、前記少なくとも1つの表面が酸化珪素である場合を除く)方法。 - 前記基材の前記少なくとも1つの表面が28℃〜30℃の温度で清浄化される、請求項1に記載の方法。
- 前記基材の前記少なくとも1つの表面を前記無機酸の前記溶液で処理することが、前記基材の前記少なくとも1つの表面を活性化することを含む、請求項1又は2に記載の方法。
- 前記基材の前記少なくとも1つの表面が、25℃の温度で前記無機酸の前記溶液で処理される、請求項1〜3のいずれか1項に記載の方法。
- 前記堆積させるステップが、前記不活性ガス雰囲気中で、600℃〜1000℃の温度で3〜240分間シリコン前駆体を分解することを含み、前記不活性ガスがキャリアガスである、請求項1〜4のいずれか一項に記載の方法。
- シリコン前駆体が水素化ケイ素である、請求項5に記載の方法。
- 前記不活性ガスが、アルゴン、ヘリウム、窒素、及び、それらのうち2つ以上と水素との混合物からなる群から選択される、請求項1〜6のいずれか一項に記載の方法。
- シリコン前駆体が前記不活性ガスと混合され、混合物中の前記シリコン前駆体の量が1体積%〜30体積%である、請求項5又は6に記載の方法。
- 前記混合物中の前記シリコン前駆体の前記量が1体積%〜10体積%である、請求項8に記載の方法。
- 少なくとも1つの表面が前記基材の内部及び/又は外部表面を表す、請求項1〜9のいずれか一項に記載の方法。
- 前記無機酸が、塩酸、硫酸、硝酸、及びそれらのうち2つ以上の混合物からなる群から選択される、請求項1〜10のいずれか一項に記載の方法。
- 前記アモルファスシリコンを堆積する前記ステップが、前記基材の前記内部及び外部表面上で逐次的に任意の順序で行われる、請求項10に記載の方法。
- アモルファスシリコンを堆積する前記ステップが、前記基材の前記内部及び外部表面上で同時に行われる、請求項10に記載の方法。
- 前記有機溶媒が揮発性有機溶媒である、請求項1〜13のいずれか一項に記載の方法。
- 前記有機溶媒がエタノール又はtert−ブタノールである、請求項1〜14のいずれか一項に記載の方法。
- 前記シリコン前駆体を分解する前記ステップの後に得られるガス混合物が、前記不活性ガスと1:2の比で混合された後に前記キャリアガスとして再利用される、請求項5に記載の方法。
- 前記金属材料がステンレス鋼である、請求項1〜16のいずれか1項に記載の方法。
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