JP6762746B2 - 露光装置および露光方法、ならびに物品の製造方法 - Google Patents

露光装置および露光方法、ならびに物品の製造方法 Download PDF

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Publication number
JP6762746B2
JP6762746B2 JP2016067408A JP2016067408A JP6762746B2 JP 6762746 B2 JP6762746 B2 JP 6762746B2 JP 2016067408 A JP2016067408 A JP 2016067408A JP 2016067408 A JP2016067408 A JP 2016067408A JP 6762746 B2 JP6762746 B2 JP 6762746B2
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JP
Japan
Prior art keywords
substrate
exposure
optical axis
axis direction
exposed
Prior art date
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Active
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JP2016067408A
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English (en)
Japanese (ja)
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JP2016206654A (ja
Inventor
光英 西村
光英 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to KR1020160043951A priority Critical patent/KR20160123236A/ko
Priority to US15/097,585 priority patent/US10133177B2/en
Priority to TW105111492A priority patent/TWI637242B/zh
Publication of JP2016206654A publication Critical patent/JP2016206654A/ja
Priority to KR1020190024474A priority patent/KR102078079B1/ko
Application granted granted Critical
Publication of JP6762746B2 publication Critical patent/JP6762746B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2016067408A 2015-04-15 2016-03-30 露光装置および露光方法、ならびに物品の製造方法 Active JP6762746B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020160043951A KR20160123236A (ko) 2015-04-15 2016-04-11 노광 장치, 노광 방법, 및 물품의 제조 방법
US15/097,585 US10133177B2 (en) 2015-04-15 2016-04-13 Exposure apparatus, exposure method, and article manufacturing method
TW105111492A TWI637242B (zh) 2015-04-15 2016-04-13 曝光裝置、曝光方法及物品製造方法
KR1020190024474A KR102078079B1 (ko) 2015-04-15 2019-03-04 노광 장치, 노광 방법, 및 물품의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015083484 2015-04-15
JP2015083484 2015-04-15

Publications (2)

Publication Number Publication Date
JP2016206654A JP2016206654A (ja) 2016-12-08
JP6762746B2 true JP6762746B2 (ja) 2020-09-30

Family

ID=57487205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016067408A Active JP6762746B2 (ja) 2015-04-15 2016-03-30 露光装置および露光方法、ならびに物品の製造方法

Country Status (3)

Country Link
JP (1) JP6762746B2 (zh)
KR (1) KR102078079B1 (zh)
TW (1) TWI637242B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6591482B2 (ja) 2017-05-22 2019-10-16 株式会社東海理化電機製作所 露光方法
CN110770653B (zh) * 2017-06-08 2024-05-03 Asml荷兰有限公司 用于测量对准的系统和方法
JP2024062787A (ja) 2022-10-25 2024-05-10 キヤノン株式会社 露光装置および物品製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3572430B2 (ja) * 1994-11-29 2004-10-06 株式会社ニコン 露光方法及びその装置
JP4598902B2 (ja) * 1998-05-20 2010-12-15 キヤノン株式会社 走査露光装置およびデバイス製造方法
JP2001093813A (ja) * 1999-09-22 2001-04-06 Nec Corp ステッパ式露光方法
JP2002164276A (ja) * 2000-11-28 2002-06-07 Nikon Corp 焦点合わせ方法、アライメント方法、露光方法、露光装置、並びにデバイスの製造方法
WO2005088686A1 (ja) * 2004-03-16 2005-09-22 Nikon Corporation 段差計測方法及び装置、並びに露光方法及び装置
JP2006222312A (ja) * 2005-02-10 2006-08-24 Canon Inc ステージ制御装置及びその方法、ステージ装置並びに露光装置
JP2010283037A (ja) * 2009-06-02 2010-12-16 Canon Inc 露光装置およびデバイス製造方法
JP2012133122A (ja) * 2010-12-21 2012-07-12 Nsk Technology Co Ltd 近接露光装置及びそのギャップ測定方法
JP2013246258A (ja) * 2012-05-24 2013-12-09 Nikon Corp 焦点位置補正方法、露光方法、デバイス製造方法及び露光装置
JP6157093B2 (ja) * 2012-11-15 2017-07-05 キヤノン株式会社 露光装置、露光方法及びデバイスの製造方法

Also Published As

Publication number Publication date
JP2016206654A (ja) 2016-12-08
KR20190026709A (ko) 2019-03-13
TWI637242B (zh) 2018-10-01
KR102078079B1 (ko) 2020-02-17
TW201636744A (zh) 2016-10-16

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