JP6752980B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6752980B2 JP6752980B2 JP2019549779A JP2019549779A JP6752980B2 JP 6752980 B2 JP6752980 B2 JP 6752980B2 JP 2019549779 A JP2019549779 A JP 2019549779A JP 2019549779 A JP2019549779 A JP 2019549779A JP 6752980 B2 JP6752980 B2 JP 6752980B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- semiconductor device
- conductive layer
- terminal
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04034—Bonding areas specifically adapted for strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/35—Manufacturing methods
- H01L2224/358—Post-treatment of the connector
- H01L2224/3583—Reworking
- H01L2224/35847—Reworking with a mechanical process, e.g. with flattening of the connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37005—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/3701—Shape
- H01L2224/37012—Cross-sectional shape
- H01L2224/37013—Cross-sectional shape being non uniform along the connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40105—Connecting bonding areas at different heights
- H01L2224/40106—Connecting bonding areas at different heights the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/40247—Connecting the strap to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/404—Connecting portions
- H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
- H01L2224/40499—Material of the auxiliary connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73213—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/8434—Bonding interfaces of the connector
- H01L2224/84345—Shape, e.g. interlocking features
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
上面に複数の導電層が設けられた基板と、
前記基板の上面に配置され、下面側の第1の端子が前記基板の上面に設けられた第1の導電層に電気的に接続された半導体素子と、
前記基板及び半導体素子を封止する封止部と、
一端部が前記封止部内の前記基板の前記上面の辺方向に延在する端部で前記第1の導電層の上面に接触し、他端部が前記封止部から露出している第1のリードフレームと、
前記基板の前記端部で前記第1の導電層の上面と前記第1のリードフレームの前記一端部の下面側との間を接合し且つ導電性を有する第1の導電性接合材と、を備え、
前記第1のリードフレームの前記一端部は、基準方向に沿って上方に突出するように設けられた第1のアーチ部と、前記第1のアーチ部に繋がり且つ前記第1のアーチ部よりも先端側に位置し、前記基準方向に沿って下方に突出するように曲げられた第1の曲げ部と、を有する
ことを特徴とする。
前記第1の曲げ部の下面側が、前記第1の導電層の上面と前記基準方向に沿って線接触していることを特徴とする。
前記第1の導電性接合材は、前記第1のリードフレームの前記第1の曲げ部が前記第1の導電層の上面と線接触する前記基準方向に沿って配置され、前記基板の前記端部で前記第1の導電層の上面と前記第1の曲げ部の下面側との間を接合している
ことを特徴とする。
前記第1のリードフレームの前記第1の曲げ部のうち前記第1の導電層と線接触する部分の前記基準方向の両側の側面には、前記基準方向に凹んだ切り欠き部が形成されており、
前記第1の導電性接合材の一部は、前記切り欠き部内に埋め込まれて、前記第1の導電層の上面と前記第1の曲げ部の前記切り欠き部との間を接合している
ことを特徴とする。
前記第1のリードフレームは、
前記基板の前記端部が延在する前記辺方向と、前記第1の曲げ部の線接触する領域が延在する前記基準方向とが平行になるように配置されている
ことを特徴とする。
前記第1のリードフレームは、前記一端部と前記他端部との間に位置し且つ前記封止部内に封止された本体部を有し、前記第1のアーチ部の上面の位置は、前記本体部の上面の位置よりも高い
ことを特徴とする。
前記第1のアーチ部の前記辺方向の幅は、前記第1の曲げ部の前記切り欠き部以外の前記辺方向の幅と、同じである
ことを特徴とする。
前記第1のリードフレームの前記一端部と前記他端部とは、同じ厚さを有することを特徴とする。
前記第1の導電性接合材は、はんだ材であることを特徴とする。
前記第1のアーチ部は、
前記第1のリードフレームに印加された応力を周辺の前記封止部に逃して、前記第1のリードフレームの前記第1の曲げ部に応力が印加されるのを抑制する
ことを特徴とする。
前記第1の曲げ部の下面の位置は、前記本体部の下面の位置よりも低いことを特徴とする。
一端部が前記封止部内の前記基板の上面の前記端部に設けられた第2の導電層の上面に接触し、他端部が前記封止部から露出している第2のリードフレームと、
前記基板の前記端部で前記第1の導電層と前記第2のリードフレームの前記一端部との間を接合し且つ導電性を有する第2の導電性接合材と、
前記第2の導電層と前記半導体素子の上面側の第2の端子との間を電気的に接続する接続子Xと、をさらに備え、
前記第2のリードフレームの前記一端部は、
前記基準方向に沿って上方に突出するように設けられた第2のアーチ部と、
前記第2のアーチ部に繋がり且つ前記第2のアーチ部よりも先端側に位置し、前記基準方向に沿って下方に突出するように曲げられた第2の曲げ部と、を有し、
前記第2の曲げ部の下側が、前記第2の導電層の上面と前記基準方向に沿って線接触している
ことを特徴とする。
前記半導体素子は、
前記第1の端子がドレイン端子であり、前記第2の端子がゲート端子であり、上面に前記第2の端子よりも面積が大きい第3の端子であるソース端子が設けられたMOSFETである
ことを特徴とする。
前記第1のリードフレームの前記一端部の前記基準方向の幅は、前記第2のリードフレームの前記一端部の前記基準方向の幅よりも、大きい
ことを特徴とする。
一端部が前記封止部内の前記第3の端子に電気的に接続され、他端部が前記封止部から露出している第3のリードフレームをさらに備える
ことを特徴とする。
B 基板
S 半導体素子
200 封止部
L1 第1のリードフレーム
L11 検出用リードフレーム
H1 第1の導電性接合材
L2 第2のリードフレーム
H2 第2の導電性接合材(第1の制御用導電性接合材)
HG 第2の制御用導電性接合材
HX 第3の制御用導電性接合材
X 接続子
L3 第3のリードフレーム
L31 検出用リードフレーム
Claims (15)
- 上面に複数の導電層が設けられた基板と、
前記基板の上面に配置され、下面側の第1の端子が前記基板の上面に設けられた第1の導電層に電気的に接続された半導体素子と、
前記基板及び半導体素子を封止する封止部と、
一端部が前記封止部内の前記基板の前記上面の辺方向に延在する端部で前記第1の導電層の上面に接触し、他端部が前記封止部から露出している第1のリードフレームと、
前記基板の前記端部で前記第1の導電層の上面と前記第1のリードフレームの前記一端部の下面側との間を接合し且つ導電性を有する第1の導電性接合材と、を備え、
前記第1のリードフレームの前記一端部は、基準方向に沿って上方に突出するように設けられた第1のアーチ部と、前記第1のアーチ部に繋がり且つ前記第1のアーチ部よりも先端側に位置し、前記基準方向に沿って下方に突出するように曲げられた第1の曲げ部と、を有し、
前記第1のリードフレームの前記第1の曲げ部のうち前記第1の導電層と線接触する部分の前記基準方向の両側の側面には、前記基準方向に凹んだ切り欠き部が形成されている
ことを特徴とする半導体装置。 - 前記第1の曲げ部の下面側が、前記第1の導電層の上面と前記基準方向に沿って線接触していることを特徴とする請求項1に記載の半導体装置。
- 前記第1の導電性接合材は、前記第1のリードフレームの前記第1の曲げ部が前記第1の導電層の上面と線接触する前記基準方向に沿って配置され、前記基板の前記端部で前記第1の導電層の上面と前記第1の曲げ部の下面側との間を接合している
ことを特徴とする請求項2に記載の半導体装置。 - 前記第1の導電性接合材の一部は、前記切り欠き部内に埋め込まれて、前記第1の導電層の上面と前記第1の曲げ部の前記切り欠き部との間を接合している
ことを特徴とする請求項3に記載の半導体装置。 - 前記第1のリードフレームは、
前記基板の前記端部が延在する前記辺方向と、前記第1の曲げ部の線接触する領域が延在する前記基準方向とが平行になるように配置されている
ことを特徴とする請求項4に記載の半導体装置。 - 前記第1のリードフレームは、前記一端部と前記他端部との間に位置し且つ前記封止部内に封止された本体部を有し、前記第1のアーチ部の上面の位置は、前記本体部の上面の位置よりも高い
ことを特徴とする請求項5に記載の半導体装置。 - 前記第1のアーチ部の前記辺方向の幅は、前記第1の曲げ部の前記切り欠き部以外の前記辺方向の幅と、同じである
ことを特徴とする請求項6に記載の半導体装置。 - 前記第1のリードフレームの前記一端部と前記他端部とは、同じ厚さを有することを特徴とする請求項7に記載の半導体装置。
- 前記第1の導電性接合材は、はんだ材であることを特徴とする請求項6に記載の半導体装置。
- 前記第1のアーチ部は、
前記第1のリードフレームに印加された応力を周辺の前記封止部に逃して、前記第1のリードフレームの前記第1の曲げ部に応力が印加されるのを抑制する
ことを特徴とする請求項2に記載の半導体装置。 - 前記第1の曲げ部の下面の位置は、前記本体部の下面の位置よりも低いことを特徴とする請求項8に記載の半導体装置。
- 一端部が前記封止部内の前記基板の上面の前記端部に設けられた第2の導電層の上面に接触し、他端部が前記封止部から露出している第2のリードフレームと、
前記基板の前記端部で前記第1の導電層と前記第2のリードフレームの前記一端部との間を接合し且つ導電性を有する第2の導電性接合材と、
前記第2の導電層と前記半導体素子の上面側の第2の端子との間を電気的に接続する接続子と、をさらに備え、
前記第2のリードフレームの前記一端部は、
前記基準方向に沿って上方に突出するように設けられた第2のアーチ部と、
前記第2のアーチ部に繋がり且つ前記第2のアーチ部よりも先端側に位置し、前記基準方向に沿って下方に突出するように曲げられた第2の曲げ部と、を有し、
前記第2の曲げ部の下側が、前記第2の導電層の上面と前記基準方向に沿って線接触している
ことを特徴とする請求項5に記載の半導体装置。 - 前記半導体素子は、
前記第1の端子がドレイン端子であり、前記第2の端子がゲート端子であり、上面に前記第2の端子よりも面積が大きい第3の端子であるソース端子が設けられたMOSFETである
ことを特徴とする請求項12に記載の半導体装置。 - 前記第1のリードフレームの前記一端部の前記基準方向の幅は、前記第2のリードフレームの前記一端部の前記基準方向の幅よりも、大きい
ことを特徴とする請求項13に記載の半導体装置。 - 一端部が前記封止部内の前記第3の端子に電気的に接続され、他端部が前記封止部から露出している第3のリードフレームをさらに備える
ことを特徴とする請求項14に記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/038755 WO2019082343A1 (ja) | 2017-10-26 | 2017-10-26 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019082343A1 JPWO2019082343A1 (ja) | 2020-04-16 |
JP6752980B2 true JP6752980B2 (ja) | 2020-09-09 |
Family
ID=66246292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019549779A Active JP6752980B2 (ja) | 2017-10-26 | 2017-10-26 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11309232B2 (ja) |
EP (1) | EP3703118B1 (ja) |
JP (1) | JP6752980B2 (ja) |
CN (1) | CN111316429A (ja) |
WO (1) | WO2019082343A1 (ja) |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS576251U (ja) * | 1980-06-11 | 1982-01-13 | ||
JP2576531B2 (ja) * | 1987-10-14 | 1997-01-29 | 日本電装株式会社 | ハイブリッドic |
US5001545A (en) * | 1988-09-09 | 1991-03-19 | Motorola, Inc. | Formed top contact for non-flat semiconductor devices |
JPH06181276A (ja) * | 1992-12-15 | 1994-06-28 | Shinko Electric Ind Co Ltd | 半導体装置用リード |
JP2000049184A (ja) * | 1998-05-27 | 2000-02-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP3767398B2 (ja) * | 2001-03-19 | 2006-04-19 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
JP2002299541A (ja) * | 2001-03-28 | 2002-10-11 | Densei Lambda Kk | 表面実装用電源装置におけるリード |
CN100418216C (zh) * | 2004-11-30 | 2008-09-10 | 株式会社东芝 | 半导体封装及半导体模块 |
JP5252819B2 (ja) * | 2007-03-26 | 2013-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5011562B2 (ja) * | 2007-08-22 | 2012-08-29 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2011023517A (ja) * | 2009-07-15 | 2011-02-03 | Hitachi Cable Ltd | 半導体装置用tabテープおよびその製造方法 |
JP5623622B2 (ja) * | 2011-03-09 | 2014-11-12 | パナソニック株式会社 | 半導体装置 |
JP2015012065A (ja) | 2013-06-27 | 2015-01-19 | 株式会社デンソー | 半導体装置の製造方法 |
JP6363825B2 (ja) * | 2013-07-29 | 2018-07-25 | 新電元工業株式会社 | 半導体装置及びリードフレーム |
JP6201626B2 (ja) * | 2013-10-23 | 2017-09-27 | スミダコーポレーション株式会社 | 電子部品及び電子部品の製造方法 |
JP2015090965A (ja) * | 2013-11-07 | 2015-05-11 | 三菱電機株式会社 | 半導体装置 |
JP2015095474A (ja) * | 2013-11-08 | 2015-05-18 | アイシン精機株式会社 | 電子部品パッケージ |
WO2016084483A1 (ja) * | 2014-11-27 | 2016-06-02 | 新電元工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法、および半導体装置の製造方法 |
JP6627600B2 (ja) * | 2016-03-23 | 2020-01-08 | 三菱マテリアル株式会社 | パワーモジュールの製造方法 |
-
2017
- 2017-10-26 WO PCT/JP2017/038755 patent/WO2019082343A1/ja unknown
- 2017-10-26 JP JP2019549779A patent/JP6752980B2/ja active Active
- 2017-10-26 US US16/630,690 patent/US11309232B2/en active Active
- 2017-10-26 EP EP17929433.5A patent/EP3703118B1/en active Active
- 2017-10-26 CN CN201780093212.0A patent/CN111316429A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3703118A4 (en) | 2020-09-02 |
US11309232B2 (en) | 2022-04-19 |
EP3703118B1 (en) | 2022-05-18 |
US20200395276A1 (en) | 2020-12-17 |
CN111316429A (zh) | 2020-06-19 |
WO2019082343A1 (ja) | 2019-05-02 |
JPWO2019082343A1 (ja) | 2020-04-16 |
EP3703118A1 (en) | 2020-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20150287666A1 (en) | Lead for connection to a semiconductor device | |
JP6308300B2 (ja) | 半導体装置 | |
JP4804497B2 (ja) | 半導体装置 | |
JP2015056638A (ja) | 半導体装置およびその製造方法 | |
JP6752981B2 (ja) | 半導体装置の製造方法 | |
JP2009267054A (ja) | 半導体装置およびその製造方法 | |
US10251268B2 (en) | Circuit structure | |
JP6752980B2 (ja) | 半導体装置 | |
JP6752982B2 (ja) | 半導体装置、及び、半導体装置の製造方法 | |
JP6808849B2 (ja) | 半導体装置 | |
JP5217014B2 (ja) | 電力変換装置およびその製造方法 | |
JP7274954B2 (ja) | 半導体装置 | |
JP4749181B2 (ja) | 半導体装置とその製造方法 | |
JPWO2019049213A1 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191212 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200721 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6752980 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |