JP6747304B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- JP6747304B2 JP6747304B2 JP2017005136A JP2017005136A JP6747304B2 JP 6747304 B2 JP6747304 B2 JP 6747304B2 JP 2017005136 A JP2017005136 A JP 2017005136A JP 2017005136 A JP2017005136 A JP 2017005136A JP 6747304 B2 JP6747304 B2 JP 6747304B2
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Description
図1は、本発明の実施の形態1に係る電力用半導体装置を示す断面図である。セラミックからなる絶縁基板1の上面に上面パターン2が形成され、下面に下面パターン3が形成されている。なお、これに限らず、パターニングされたリードフレーム、又は樹脂により絶縁された基板を用いてもよい。
図3は、本発明の実施の形態2に係る電力用半導体装置を示す断面図である。電極端子11は、下面電極12とエミッタ電極8及びアノード電極10とが接合される領域のみにおいて下側に凸状の変形部21を有する。変形部21の高さは0.3mmである。ポリイミドフィルムからなる絶縁層13は変形部21の段差に追従して破断していない。その他の構成は実施の形態1と同様である。
図4は、本発明の実施の形態3に係る電力用半導体装置を示す平面図である。信号パッド9は、ゲートパッド9aとエミッタセンスパッド9bを有する。上面電極14は、互いに平行に配置されたゲート配線用パターン14aとエミッタセンス用パターン14bを有する。金属ワイヤ17は、ゲートパッド9aとゲート配線用パターン14aに接続される金属ワイヤ17aと、エミッタセンスパッド9bとエミッタセンス用パターン14bに接続される金属ワイヤ17bとを有する。下面電極12は、金属ワイヤ17aが接合されるゲートパッド9aの接合部とゲート配線用パターン14aの接合部との間に切り欠き22aを有し、金属ワイヤ17bが接合されるエミッタセンスパッド9bの接合部とエミッタセンス用パターン14bの接合部との間に切り欠き22bを有する。その他の構成は実施の形態1と同様である。
Claims (8)
- 基板と、
前記基板に実装され、メイン電極及び信号パッドを有する半導体チップと、
板状の電極端子と、
前記半導体チップ及び前記電極端子を封止する封止材とを備え、
前記電極端子は、
前記メイン電極と接合材により接合された下面電極と、
前記下面電極の上に形成された絶縁層と、
前記絶縁層の上に形成され、前記信号パッドと金属ワイヤにより接続された上面電極とを有し、
前記電極端子は、前記下面電極と前記メイン電極とが接合される領域において下側に凸状の変形部を有することを特徴とする電力用半導体装置。 - 前記上面電極の厚みは前記下面電極の厚みより薄いことを特徴とする請求項1に記載の電力用半導体装置。
- 前記上面電極の面積は前記下面電極の面積より小さいことを特徴とする請求項1又は2に記載の電力用半導体装置。
- 前記下面電極は、前記金属ワイヤがそれぞれ接合される前記信号パッドの接合部と前記上面電極の接合部との間に切り欠きを有することを特徴とする請求項1〜3の何れか1項に記載の電力用半導体装置。
- 前記下面電極は、前記金属ワイヤが接合される前記信号パッドの接合部の上に貫通孔を有することを特徴とする請求項1〜3の何れか1項に記載の電力用半導体装置。
- 前記上面電極は、互いに平行に配置された複数のパターンを有することを特徴とする請求項1〜5の何れか1項に記載の電力用半導体装置。
- 前記下面電極及び前記上面電極はCuを主材料とし、前記絶縁層はポリイミドフィルムからなることを特徴とする請求項1〜6の何れか1項に記載の電力用半導体装置。
- 前記半導体チップの基材はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1〜7の何れか1項に記載の電力用半導体装置。
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JP2017005136A JP6747304B2 (ja) | 2017-01-16 | 2017-01-16 | 電力用半導体装置 |
CN201820126994.5U CN208593200U (zh) | 2017-01-16 | 2018-01-25 | 白板组装体 |
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JP2017005136A JP6747304B2 (ja) | 2017-01-16 | 2017-01-16 | 電力用半導体装置 |
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JP6747304B2 true JP6747304B2 (ja) | 2020-08-26 |
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US11749633B2 (en) | 2019-04-18 | 2023-09-05 | Hitachi Energy Switzerland Ag | Power semiconductor module with laser-welded leadframe |
CN112724731B (zh) * | 2020-12-29 | 2022-04-19 | 苏州德达材料科技有限公司 | 一种磁吸书写墙及其制备工艺 |
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JP4062191B2 (ja) * | 2003-07-03 | 2008-03-19 | 富士電機デバイステクノロジー株式会社 | 半導体装置及びその製造方法 |
JP2013105789A (ja) * | 2011-11-10 | 2013-05-30 | Sumitomo Electric Ind Ltd | 配線シート付き配線体、半導体装置、およびその半導体装置の製造方法 |
DE112015000513T5 (de) * | 2014-01-27 | 2016-11-10 | Mitsubishi Electric Corporation | Elektrodenanschluss, Halbleitereinrichtung für elektrische Energie sowie Verfahren zur Herstellung einer Halbleitereinrichtung für elektrische Energie |
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CN208593200U (zh) | 2019-03-12 |
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