JP6734842B2 - ディスプレイ用ガラスの静電放電を抑制するための有機表面処理 - Google Patents

ディスプレイ用ガラスの静電放電を抑制するための有機表面処理 Download PDF

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Publication number
JP6734842B2
JP6734842B2 JP2017507882A JP2017507882A JP6734842B2 JP 6734842 B2 JP6734842 B2 JP 6734842B2 JP 2017507882 A JP2017507882 A JP 2017507882A JP 2017507882 A JP2017507882 A JP 2017507882A JP 6734842 B2 JP6734842 B2 JP 6734842B2
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Japan
Prior art keywords
glass substrate
glass
organic film
organic
compound
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JP2017507882A
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Japanese (ja)
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JP2017524644A (ja
JP2017524644A5 (enExample
Inventor
パトリック ハミルトン，ジェイムズ
パトリック ハミルトン，ジェイムズ
ジョージ マンリー，ロバート
ジョージ マンリー，ロバート
マイケル ミズ，ジョナサン
マイケル ミズ，ジョナサン
ジャニーナ ワルクザック，ワンダ
ジャニーナ ワルクザック，ワンダ
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Corning Inc
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Corning Inc
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Publication of JP2017524644A5 publication Critical patent/JP2017524644A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C03B17/06—Forming glass sheets
    • C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00—Shaping glass in contact with the surface of a liquid
    • C03B18/02—Forming sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/365—Coating different sides of a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2017507882A 2014-08-12 2015-08-07 ディスプレイ用ガラスの静電放電を抑制するための有機表面処理 Expired - Fee Related JP6734842B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462036166P 2014-08-12 2014-08-12
US62/036,166 2014-08-12
PCT/US2015/044226 WO2016025320A1 (en) 2014-08-12 2015-08-07 Organic surface treatments for display glasses to reduce esd

Publications (3)

Publication Number Publication Date
JP2017524644A JP2017524644A (ja) 2017-08-31
JP2017524644A5 JP2017524644A5 (enExample) 2018-09-20
JP6734842B2 true JP6734842B2 (ja) 2020-08-05

Family

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JP2017507882A Expired - Fee Related JP6734842B2 (ja) 2014-08-12 2015-08-07 ディスプレイ用ガラスの静電放電を抑制するための有機表面処理

Country Status (6)

Country Link
US (1) US10153268B2 (enExample)
JP (1) JP6734842B2 (enExample)
KR (1) KR20170041248A (enExample)
CN (1) CN106573831B (enExample)
TW (1) TWI687378B (enExample)
WO (1) WO2016025320A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI778019B (zh) * 2017-02-14 2022-09-21 美商康寧公司 併入積層基板的電子組件及其製造方法
JP2019081124A (ja) * 2017-10-30 2019-05-30 横浜油脂工業株式会社 ガラス基板に蓄積する静電気を低減させる洗浄方法
KR102662640B1 (ko) * 2018-03-07 2024-05-07 코닝 인코포레이티드 감소된 정전기 대전을 위한 텍스처된 유리 표면들
JP2020101616A (ja) * 2018-12-20 2020-07-02 日本電気硝子株式会社 電子デバイスの製造方法及びガラス基板
CN113527743B (zh) * 2021-07-26 2022-12-23 马鞍山东毅新材料科技有限公司 一种防静电转移的显示屏保护膜及其生产工艺

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BE757057A (fr) 1969-10-06 1971-04-05 Corning Glass Works Procede et appareil de controle d'epaisseur d'une feuille de verre nouvellement etiree
US4102664A (en) 1977-05-18 1978-07-25 Corning Glass Works Method for making glass articles with defect-free surfaces
US4214886A (en) 1979-04-05 1980-07-29 Corning Glass Works Forming laminated sheet glass
US4880453A (en) 1988-12-19 1989-11-14 Corning Incorporated Method for making glass articles with defect-free surfaces and soluble glasses therefor
US5119258A (en) 1990-02-06 1992-06-02 Hmt Technology Corporation Magnetic disc with low-friction glass substrate
JP2720612B2 (ja) * 1991-02-27 1998-03-04 日本電気株式会社 薄膜トランジスタアレイ基板の製造方法
JPH0753948A (ja) * 1993-08-19 1995-02-28 Kao Corp 帯電防止材料およびこれを含む光記録媒体
US5792327A (en) 1994-07-19 1998-08-11 Corning Incorporated Adhering metal to glass
KR20000036175A (ko) 1996-09-17 2000-06-26 알프레드 엘. 미첼슨 텍스처화된 표면 및 이의 제조방법
US5985700A (en) 1996-11-26 1999-11-16 Corning Incorporated TFT fabrication on leached glass surface
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JP2002072922A (ja) 2000-06-13 2002-03-12 Asahi Glass Co Ltd ディスプレイ用ガラス基板およびその選別方法
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Also Published As

Publication number Publication date
CN106573831B (zh) 2020-04-21
CN106573831A (zh) 2017-04-19
US10153268B2 (en) 2018-12-11
TW201612128A (en) 2016-04-01
TWI687378B (zh) 2020-03-11
WO2016025320A1 (en) 2016-02-18
JP2017524644A (ja) 2017-08-31
US20170222025A1 (en) 2017-08-03
KR20170041248A (ko) 2017-04-14

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