JP6729602B2 - 光電変換素子を製造する方法 - Google Patents
光電変換素子を製造する方法 Download PDFInfo
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- JP6729602B2 JP6729602B2 JP2017553783A JP2017553783A JP6729602B2 JP 6729602 B2 JP6729602 B2 JP 6729602B2 JP 2017553783 A JP2017553783 A JP 2017553783A JP 2017553783 A JP2017553783 A JP 2017553783A JP 6729602 B2 JP6729602 B2 JP 6729602B2
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- 238000000034 method Methods 0.000 title claims description 80
- 238000006243 chemical reaction Methods 0.000 title claims description 58
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- 239000000758 substrate Substances 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 238000002347 injection Methods 0.000 claims description 26
- 239000007924 injection Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 239000011701 zinc Substances 0.000 claims description 25
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- 239000011135 tin Substances 0.000 claims description 20
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- 239000001301 oxygen Substances 0.000 claims description 14
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- SMBQBQBNOXIFSF-UHFFFAOYSA-N dilithium Chemical compound [Li][Li] SMBQBQBNOXIFSF-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229910052755 nonmetal Chemical group 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 150000002910 rare earth metals Chemical group 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical compound C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
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| JP2015234103 | 2015-11-30 | ||
| JP2015234103 | 2015-11-30 | ||
| PCT/JP2016/084475 WO2017094547A1 (fr) | 2015-11-30 | 2016-11-21 | Procédé de fabrication d'élément de conversion photoélectrique |
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| JPWO2017094547A1 JPWO2017094547A1 (ja) | 2018-09-13 |
| JP6729602B2 true JP6729602B2 (ja) | 2020-07-22 |
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| JP (1) | JP6729602B2 (fr) |
| KR (1) | KR20180087259A (fr) |
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| WO2019026394A1 (fr) * | 2017-08-01 | 2019-02-07 | 株式会社ニコン | Procédé de production de transistor et transistor |
| JP7181641B2 (ja) * | 2018-07-02 | 2022-12-01 | 国立大学法人東京工業大学 | 光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法 |
| JP2020072085A (ja) | 2018-10-30 | 2020-05-07 | Ａｇｃ株式会社 | 光電変換素子を製造する方法 |
| CN113498631A (zh) * | 2019-02-26 | 2021-10-12 | 夏普株式会社 | 发光元件、发光装置 |
| JP7378974B2 (ja) * | 2019-06-13 | 2023-11-14 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
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| JP4673947B2 (ja) * | 1999-02-15 | 2011-04-20 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| KR100702763B1 (ko) * | 1999-02-15 | 2007-04-03 | 이데미쓰 고산 가부시키가이샤 | 유기 전자 발광 소자 및 그의 제조 방법 |
| SG169230A1 (en) * | 2002-08-02 | 2011-03-30 | Idemitsu Kousan Co Ltd | Sputtering target, sintered body, conductive film formed by using them, organic el device, and substrate used for the organic el device |
| JP5522889B2 (ja) * | 2007-05-11 | 2014-06-18 | 出光興産株式会社 | Ｉｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット |
| WO2010058533A1 (fr) * | 2008-11-20 | 2010-05-27 | 出光興産株式会社 | OXYDE FRITTÉ À BASE DE ZnO-SnO2-In2O3 ET FILM CONDUCTEUR TRANSPARENT AMORPHE |
| TWI413267B (zh) * | 2009-01-30 | 2013-10-21 | Ulvac Inc | 光電轉換裝置之製造方法、光電轉換裝置、光電轉換裝置之製造系統、及光電轉換裝置製造系統之使用方法 |
| JP2009302071A (ja) * | 2009-09-29 | 2009-12-24 | Idemitsu Kosan Co Ltd | 有機ｅｌ素子及びそれに用いる基板 |
| JP2013153118A (ja) * | 2011-03-09 | 2013-08-08 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物、上記酸化物を備えた薄膜トランジスタの半導体層および薄膜トランジスタ |
| US9214519B2 (en) * | 2011-05-10 | 2015-12-15 | Idemitsu Kosan Co., Ltd. | In2O3—SnO2—ZnO sputtering target |
| JP6131949B2 (ja) * | 2012-06-01 | 2017-05-24 | 三菱化学株式会社 | 金属酸化物含有半導体層の製造方法及び電子デバイス |
| WO2015098458A1 (fr) | 2013-12-26 | 2015-07-02 | 国立大学法人東京工業大学 | Film mince d'oxyde métallique, élément électroluminescent organique pourvu d'un film mince, cellule solaire, et cellule solaire organique |
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- 2016-11-21 CN CN201680069408.1A patent/CN108293281B/zh active Active
- 2016-11-21 KR KR1020187014679A patent/KR20180087259A/ko active IP Right Grant
- 2016-11-21 WO PCT/JP2016/084475 patent/WO2017094547A1/fr active Application Filing
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| KR20180087259A (ko) | 2018-08-01 |
| CN108293281B (zh) | 2020-04-28 |
| CN108293281A (zh) | 2018-07-17 |
| JPWO2017094547A1 (ja) | 2018-09-13 |
| WO2017094547A1 (fr) | 2017-06-08 |
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