JP6727897B2 - 固体撮像装置、固体撮像装置の製造方法、および撮像システム - Google Patents

固体撮像装置、固体撮像装置の製造方法、および撮像システム Download PDF

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JP6727897B2
JP6727897B2 JP2016081833A JP2016081833A JP6727897B2 JP 6727897 B2 JP6727897 B2 JP 6727897B2 JP 2016081833 A JP2016081833 A JP 2016081833A JP 2016081833 A JP2016081833 A JP 2016081833A JP 6727897 B2 JP6727897 B2 JP 6727897B2
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gate electrode
film
imaging device
solid
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JP2016219792A5 (enExample
JP2016219792A (ja
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真里 磯部
真里 磯部
俊介 中塚
俊介 中塚
政次 板橋
政次 板橋
関根　康弘
康弘 関根
翔 鈴木
翔 鈴木
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Canon Inc
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Canon Inc
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Priority to US15/152,982 priority Critical patent/US9935140B2/en
Priority to CN201610320405.2A priority patent/CN106169489B/zh
Priority to EP16170126.3A priority patent/EP3096355B1/en
Publication of JP2016219792A publication Critical patent/JP2016219792A/ja
Priority to US15/897,940 priority patent/US10381389B2/en
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JP2016081833A 2015-05-19 2016-04-15 固体撮像装置、固体撮像装置の製造方法、および撮像システム Active JP6727897B2 (ja)

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US15/152,982 US9935140B2 (en) 2015-05-19 2016-05-12 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
CN201610320405.2A CN106169489B (zh) 2015-05-19 2016-05-16 固态成像设备、固态成像设备的制造方法以及成像系统
EP16170126.3A EP3096355B1 (en) 2015-05-19 2016-05-18 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system
US15/897,940 US10381389B2 (en) 2015-05-19 2018-02-15 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system

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JP2015101704 2015-05-19
JP2015101704 2015-05-19

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JP2016219792A5 JP2016219792A5 (enExample) 2019-05-23
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6957226B2 (ja) * 2017-06-20 2021-11-02 キヤノン株式会社 光電変換装置および機器
JP2019075441A (ja) * 2017-10-13 2019-05-16 キヤノン株式会社 光電変換装置および機器
KR102538174B1 (ko) 2017-12-26 2023-05-31 삼성전자주식회사 비아 플러그를 갖는 반도체 소자
KR102051752B1 (ko) * 2018-06-14 2020-01-09 매그나칩 반도체 유한회사 반도체 소자 및 그 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274300A (ja) * 1998-03-23 1999-10-08 Nkk Corp 半導体素子の製造方法
JP2000150857A (ja) * 1998-11-18 2000-05-30 Nec Corp 固体撮像装置及びその製造方法
JP2000216371A (ja) * 1999-01-26 2000-08-04 Matsushita Electronics Industry Corp 電荷転送装置およびその製造方法
JP3782297B2 (ja) * 2000-03-28 2006-06-07 株式会社東芝 固体撮像装置及びその製造方法
JP2003282853A (ja) * 2002-03-27 2003-10-03 Matsushita Electric Ind Co Ltd 固体撮像装置、半導体装置の製造方法及び固体撮像装置の製造方法
JP4340248B2 (ja) * 2005-03-17 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体撮像装置を製造する方法
JP2006295071A (ja) * 2005-04-14 2006-10-26 Toshiba Corp 半導体装置の製造方法
JP4993007B2 (ja) * 2010-07-26 2012-08-08 富士通セミコンダクター株式会社 固体撮像装置
JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
JP5814625B2 (ja) * 2011-05-27 2015-11-17 キヤノン株式会社 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法
JP2013110285A (ja) * 2011-11-22 2013-06-06 Sony Corp 固体撮像素子および製造方法、並びに、電子機器
JP2014022421A (ja) * 2012-07-13 2014-02-03 Sony Corp 固体撮像素子及びその製造方法、並びに、電子機器

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