JP2016219792A5 - - Google Patents
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- Publication number
- JP2016219792A5 JP2016219792A5 JP2016081833A JP2016081833A JP2016219792A5 JP 2016219792 A5 JP2016219792 A5 JP 2016219792A5 JP 2016081833 A JP2016081833 A JP 2016081833A JP 2016081833 A JP2016081833 A JP 2016081833A JP 2016219792 A5 JP2016219792 A5 JP 2016219792A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- region
- solid
- imaging device
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000003384 imaging method Methods 0.000 claims description 35
- 239000012212 insulator Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000011800 void material Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims 12
- 238000000034 method Methods 0.000 claims 8
- 230000002093 peripheral effect Effects 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- 239000012535 impurity Substances 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 230000000903 blocking effect Effects 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 241000287463 Phalacrocorax Species 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/152,982 US9935140B2 (en) | 2015-05-19 | 2016-05-12 | Solid state imaging device, manufacturing method of solid state imaging device, and imaging system |
| CN201610320405.2A CN106169489B (zh) | 2015-05-19 | 2016-05-16 | 固态成像设备、固态成像设备的制造方法以及成像系统 |
| EP16170126.3A EP3096355B1 (en) | 2015-05-19 | 2016-05-18 | Solid state imaging device, manufacturing method of solid state imaging device, and imaging system |
| US15/897,940 US10381389B2 (en) | 2015-05-19 | 2018-02-15 | Solid state imaging device, manufacturing method of solid state imaging device, and imaging system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015101704 | 2015-05-19 | ||
| JP2015101704 | 2015-05-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016219792A JP2016219792A (ja) | 2016-12-22 |
| JP2016219792A5 true JP2016219792A5 (enExample) | 2019-05-23 |
| JP6727897B2 JP6727897B2 (ja) | 2020-07-22 |
Family
ID=57578618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016081833A Active JP6727897B2 (ja) | 2015-05-19 | 2016-04-15 | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6727897B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6957226B2 (ja) * | 2017-06-20 | 2021-11-02 | キヤノン株式会社 | 光電変換装置および機器 |
| JP2019075441A (ja) * | 2017-10-13 | 2019-05-16 | キヤノン株式会社 | 光電変換装置および機器 |
| KR102538174B1 (ko) | 2017-12-26 | 2023-05-31 | 삼성전자주식회사 | 비아 플러그를 갖는 반도체 소자 |
| KR102051752B1 (ko) * | 2018-06-14 | 2020-01-09 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 제조방법 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11274300A (ja) * | 1998-03-23 | 1999-10-08 | Nkk Corp | 半導体素子の製造方法 |
| JP2000150857A (ja) * | 1998-11-18 | 2000-05-30 | Nec Corp | 固体撮像装置及びその製造方法 |
| JP2000216371A (ja) * | 1999-01-26 | 2000-08-04 | Matsushita Electronics Industry Corp | 電荷転送装置およびその製造方法 |
| JP3782297B2 (ja) * | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
| JP2003282853A (ja) * | 2002-03-27 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 固体撮像装置、半導体装置の製造方法及び固体撮像装置の製造方法 |
| JP4340248B2 (ja) * | 2005-03-17 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体撮像装置を製造する方法 |
| JP2006295071A (ja) * | 2005-04-14 | 2006-10-26 | Toshiba Corp | 半導体装置の製造方法 |
| JP4993007B2 (ja) * | 2010-07-26 | 2012-08-08 | 富士通セミコンダクター株式会社 | 固体撮像装置 |
| JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| JP5814625B2 (ja) * | 2011-05-27 | 2015-11-17 | キヤノン株式会社 | 固体撮像装置、それを用いた撮像システム及び固体撮像装置の製造方法 |
| JP2013110285A (ja) * | 2011-11-22 | 2013-06-06 | Sony Corp | 固体撮像素子および製造方法、並びに、電子機器 |
| JP2014022421A (ja) * | 2012-07-13 | 2014-02-03 | Sony Corp | 固体撮像素子及びその製造方法、並びに、電子機器 |
-
2016
- 2016-04-15 JP JP2016081833A patent/JP6727897B2/ja active Active
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