JP6727858B2 - 半導体受光モジュールおよび半導体受光モジュールの製造方法 - Google Patents
半導体受光モジュールおよび半導体受光モジュールの製造方法 Download PDFInfo
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- JP6727858B2 JP6727858B2 JP2016042518A JP2016042518A JP6727858B2 JP 6727858 B2 JP6727858 B2 JP 6727858B2 JP 2016042518 A JP2016042518 A JP 2016042518A JP 2016042518 A JP2016042518 A JP 2016042518A JP 6727858 B2 JP6727858 B2 JP 6727858B2
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- 239000004065 semiconductor Substances 0.000 title claims description 143
- 238000004519 manufacturing process Methods 0.000 title description 13
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- 230000000694 effects Effects 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000792 Monel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Description
Claims (5)
- 基板と、基板上に設けられ、受光部を含む半導体受光素子と、を備える半導体受光モジュールであって、
前記半導体受光素子は、
前記受光部が設けられた第1面と、前記第1面に対向する第2面と、前記第1面および前記第2面を接続し前記第1面に垂直な方向に延びる4つの側面と、を含む半導体チップと、
前記第2面および前記4つの側面を連続して被覆する金属製の遮光膜と、を有し、
前記遮光膜が、固定電位に接続されることにより前記第2面および前記4つの側面における電磁シールド効果を有する、半導体受光モジュール。 - 前記遮光膜は、前記第2面および前記4つの側面の全面を被覆している、請求項1に記載の半導体受光モジュール。
- 前記半導体チップは、ガラスエポキシ基板である前記基板に前記第2面が対面するように設けられており、
前記基板上に設けられた端子部と、
前記半導体チップの前記第2面上の遮光膜と前記端子部との間に介在されて、前記半導体チップを固定する導電性の接着剤層と、を更に備え、
前記端子部が前記固定電位に接続されることにより、前記遮光膜が前記電磁シールド効果を有する、請求項1または2に記載の半導体受光モジュール。 - 前記第1面に設けられた電極部と、
前記電極部と前記端子部とを電気的に接続するワイヤと、を更に備える、請求項3に記載の半導体受光モジュール。 - 前記半導体チップは、所定波長の光に対して光学的に透明な前記基板に前記第1面が対面するように設けられると共に、前記基板に対してバンプを介してフリップチップ実装されている、請求項1または2に記載の半導体受光モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016042518A JP6727858B2 (ja) | 2016-03-04 | 2016-03-04 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
KR1020187025334A KR102629434B1 (ko) | 2016-03-04 | 2017-01-31 | 반도체 수광 모듈 및 반도체 수광 모듈의 제조 방법 |
CN201780015060.2A CN108886066B (zh) | 2016-03-04 | 2017-01-31 | 半导体受光模块及半导体受光模块的制造方法 |
PCT/JP2017/003362 WO2017150044A1 (ja) | 2016-03-04 | 2017-01-31 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
TW106106603A TWI722124B (zh) | 2016-03-04 | 2017-03-01 | 半導體受光模組及半導體受光模組之製造方法 |
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JP2016042518A JP6727858B2 (ja) | 2016-03-04 | 2016-03-04 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2017157799A JP2017157799A (ja) | 2017-09-07 |
JP6727858B2 true JP6727858B2 (ja) | 2020-07-22 |
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JP2016042518A Active JP6727858B2 (ja) | 2016-03-04 | 2016-03-04 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
Country Status (5)
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JP (1) | JP6727858B2 (ja) |
KR (1) | KR102629434B1 (ja) |
CN (1) | CN108886066B (ja) |
TW (1) | TWI722124B (ja) |
WO (1) | WO2017150044A1 (ja) |
Families Citing this family (1)
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JP7132073B2 (ja) * | 2018-10-09 | 2022-09-06 | Nttエレクトロニクス株式会社 | 光デバイス |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS62229955A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置 |
JP3684604B2 (ja) * | 1995-02-28 | 2005-08-17 | オムロン株式会社 | 光電センサ |
JP3601761B2 (ja) * | 1998-11-19 | 2004-12-15 | 松下電器産業株式会社 | 受光素子およびその製造方法 |
JP2001013366A (ja) * | 1999-06-29 | 2001-01-19 | Furukawa Electric Co Ltd:The | 光コネクタおよびその光コネクタの接続構造 |
JP3346368B2 (ja) * | 2000-02-28 | 2002-11-18 | 日本電気株式会社 | 半導体装置およびその製造方法 |
DE10024473B4 (de) * | 2000-05-18 | 2007-04-19 | Vishay Semiconductor Gmbh | Optischer Empfänger |
JP2002170788A (ja) * | 2000-11-29 | 2002-06-14 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP2005044947A (ja) * | 2003-07-25 | 2005-02-17 | Toshiba Corp | 光結合半導体装置およびその製造方法 |
JP2005108955A (ja) | 2003-09-29 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法、光通信モジュール |
KR100673354B1 (ko) * | 2004-06-18 | 2007-01-24 | 주식회사 네패스 | 반도체 촬상소자 패키지 및 그 제조방법 |
JP2007189010A (ja) * | 2006-01-12 | 2007-07-26 | Fujifilm Corp | 光電変換装置の製造方法 |
JP2008182155A (ja) * | 2007-01-26 | 2008-08-07 | Matsushita Electric Works Ltd | 光結合型半導体リレー |
JP2008226969A (ja) * | 2007-03-09 | 2008-09-25 | Rohm Co Ltd | 光通信モジュール |
JP5344829B2 (ja) * | 2008-03-10 | 2013-11-20 | Tdk株式会社 | 集積回路 |
CN102576694A (zh) * | 2009-11-10 | 2012-07-11 | 罗姆股份有限公司 | 半导体装置及半导体装置的制造方法 |
JP5925432B2 (ja) * | 2011-05-10 | 2016-05-25 | エスアイアイ・セミコンダクタ株式会社 | 光学センサおよび光学センサの製造方法 |
JP2013000158A (ja) * | 2011-06-13 | 2013-01-07 | Seiko Epson Corp | 生体センサーおよび生体情報検出装置 |
FI20135967L (fi) * | 2013-09-27 | 2015-03-28 | Lumichip Oy | Asennustason monitoiminen kapselointikerros ja menetelmä sen valmistamiseksi |
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2016
- 2016-03-04 JP JP2016042518A patent/JP6727858B2/ja active Active
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2017
- 2017-01-31 KR KR1020187025334A patent/KR102629434B1/ko active IP Right Grant
- 2017-01-31 CN CN201780015060.2A patent/CN108886066B/zh active Active
- 2017-01-31 WO PCT/JP2017/003362 patent/WO2017150044A1/ja active Application Filing
- 2017-03-01 TW TW106106603A patent/TWI722124B/zh active
Also Published As
Publication number | Publication date |
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CN108886066B (zh) | 2022-02-22 |
JP2017157799A (ja) | 2017-09-07 |
CN108886066A (zh) | 2018-11-23 |
TWI722124B (zh) | 2021-03-21 |
TW201735384A (zh) | 2017-10-01 |
WO2017150044A1 (ja) | 2017-09-08 |
KR20180119587A (ko) | 2018-11-02 |
KR102629434B1 (ko) | 2024-01-25 |
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