JP2017157799A - 半導体受光モジュールおよび半導体受光モジュールの製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000792 Monel Inorganic materials 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
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- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 238000000016 photochemical curing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
【解決手段】基板3と、基板3上に設けられ、受光部20aを含む半導体受光素子10と、を備える半導体受光モジュール1であって、半導体受光素子10は、受光部20aが設けられた第1面と、第1面に対向する第2面22と、第1面および第2面22を接続し第1面に垂直な方向に延びる4つの側面と、を含む半導体チップ20と、第2面22および4つの側面を連続して被覆する金属製の遮光膜30と、を有する。
【選択図】図1
Description
Claims (7)
- 基板と、基板上に設けられ、受光部を含む半導体受光素子と、を備える半導体受光モジュールであって、
前記半導体受光素子は、
前記受光部が設けられた第1面と、前記第1面に対向する第2面と、前記第1面および前記第2面を接続し前記第1面に垂直な方向に延びる4つの側面と、を含む半導体チップと、
前記第2面および前記4つの側面を連続して被覆する金属製の遮光膜と、を有する半導体受光モジュール。 - 前記遮光膜は、前記第2面および前記4つの側面の全面を被覆している、請求項1に記載の半導体受光モジュール。
- 前記半導体チップは、ガラスエポキシ基板である前記基板に前記第2面が対面するように設けられており、
前記基板上に設けられた端子部と、
前記半導体チップの前記第2面上の遮光膜と前記端子部との間に介在されて、前記半導体チップを固定する導電性の接着剤層と、を更に備え、
前記端子部は、固定電位に接続されている、請求項1または2に記載の半導体受光モジュール。 - 前記第1面に設けられた電極部と、
前記電極部と前記端子部とを電気的に接続するワイヤと、を更に備える、請求項3に記載の半導体受光モジュール。 - 前記半導体チップは、所定波長の光に対して光学的に透明な前記基板に前記第1面が対面するように設けられると共に、前記基板に対してバンプを介してフリップチップ実装されている、請求項1または2に記載の半導体受光モジュール。
- 基板と、基板上に設けられ、受光部を含む半導体受光素子と、を備える半導体受光モジュールの製造方法であって、
前記受光部が第1面に複数設けられたウエハを用意する工程と、
前記ウエハの前記第1面に対向する第2面をダイシングシート上に貼ってダイシングすることにより、前記第1面および前記第2面を接続し前記第1面に垂直な方向に延びる4つの側面をそれぞれ含む複数の半導体チップを得る工程と、
前記半導体チップをそれぞれ反転して前記第1面をダイシングシート上に貼り、間隔をあけて前記半導体チップを並べる工程と、
前記半導体チップの前記第2面と前記4つの側面とを金属製の遮光膜で被覆する工程と、
前記遮光膜で被覆された前記半導体チップを前記基板上に実装する工程と、を含む、半導体受光モジュールの製造方法。 - 前記遮光膜で被覆する工程の前に実施され、前記ダイシングシートを水平方向にエクスパンドし、隣り合う前記半導体チップの間隔を広げる工程を更に含む、請求項6に記載の半導体受光モジュールの製造方法。
Priority Applications (5)
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JP2016042518A JP6727858B2 (ja) | 2016-03-04 | 2016-03-04 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
PCT/JP2017/003362 WO2017150044A1 (ja) | 2016-03-04 | 2017-01-31 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
KR1020187025334A KR102629434B1 (ko) | 2016-03-04 | 2017-01-31 | 반도체 수광 모듈 및 반도체 수광 모듈의 제조 방법 |
CN201780015060.2A CN108886066B (zh) | 2016-03-04 | 2017-01-31 | 半导体受光模块及半导体受光模块的制造方法 |
TW106106603A TWI722124B (zh) | 2016-03-04 | 2017-03-01 | 半導體受光模組及半導體受光模組之製造方法 |
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JP2016042518A JP6727858B2 (ja) | 2016-03-04 | 2016-03-04 | 半導体受光モジュールおよび半導体受光モジュールの製造方法 |
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JPS62229955A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置 |
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JP2000156520A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 受光素子およびその製造方法 |
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- 2017-01-31 WO PCT/JP2017/003362 patent/WO2017150044A1/ja active Application Filing
- 2017-03-01 TW TW106106603A patent/TWI722124B/zh active
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JPS62229955A (ja) * | 1986-03-31 | 1987-10-08 | Toshiba Corp | 半導体装置 |
JPH08235979A (ja) * | 1995-02-28 | 1996-09-13 | Omron Corp | フレキシブル基板及び光電センサ |
JP2000156520A (ja) * | 1998-11-19 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 受光素子およびその製造方法 |
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JP2008182155A (ja) * | 2007-01-26 | 2008-08-07 | Matsushita Electric Works Ltd | 光結合型半導体リレー |
JP2008226969A (ja) * | 2007-03-09 | 2008-09-25 | Rohm Co Ltd | 光通信モジュール |
JP2009218308A (ja) * | 2008-03-10 | 2009-09-24 | Tdk Corp | 集積回路 |
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CN108886066B (zh) | 2022-02-22 |
JP6727858B2 (ja) | 2020-07-22 |
TW201735384A (zh) | 2017-10-01 |
WO2017150044A1 (ja) | 2017-09-08 |
KR102629434B1 (ko) | 2024-01-25 |
KR20180119587A (ko) | 2018-11-02 |
CN108886066A (zh) | 2018-11-23 |
TWI722124B (zh) | 2021-03-21 |
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