JP6717242B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6717242B2
JP6717242B2 JP2017047334A JP2017047334A JP6717242B2 JP 6717242 B2 JP6717242 B2 JP 6717242B2 JP 2017047334 A JP2017047334 A JP 2017047334A JP 2017047334 A JP2017047334 A JP 2017047334A JP 6717242 B2 JP6717242 B2 JP 6717242B2
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Japan
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type semiconductor
semiconductor layer
type
region
trench
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JP2017047334A
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English (en)
Japanese (ja)
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JP2018152455A5 (enExample
JP2018152455A (ja
Inventor
田中　成明
成明 田中
岡　徹
徹 岡
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2017047334A priority Critical patent/JP6717242B2/ja
Priority to CN201810193710.9A priority patent/CN108574001B/zh
Priority to US15/916,790 priority patent/US10177234B2/en
Publication of JP2018152455A publication Critical patent/JP2018152455A/ja
Publication of JP2018152455A5 publication Critical patent/JP2018152455A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/154—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H10P30/206—
    • H10P30/21—

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  • Electrodes Of Semiconductors (AREA)
JP2017047334A 2017-03-13 2017-03-13 半導体装置 Active JP6717242B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017047334A JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置
CN201810193710.9A CN108574001B (zh) 2017-03-13 2018-03-09 半导体装置
US15/916,790 US10177234B2 (en) 2017-03-13 2018-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017047334A JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2018152455A JP2018152455A (ja) 2018-09-27
JP2018152455A5 JP2018152455A5 (enExample) 2019-06-27
JP6717242B2 true JP6717242B2 (ja) 2020-07-01

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JP2017047334A Active JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置

Country Status (3)

Country Link
US (1) US10177234B2 (enExample)
JP (1) JP6717242B2 (enExample)
CN (1) CN108574001B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7279587B2 (ja) * 2018-09-25 2023-05-23 豊田合成株式会社 半導体装置の製造方法
DE102020202053A1 (de) * 2020-02-19 2021-08-19 Robert Bosch Gesellschaft mit beschränkter Haftung Mosfet mit sättigungskontakt und verfahren zum bilden eines mosfet mit sättigungskontakt

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269518A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 電力用半導体素子及び半導体層の形成方法
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2010021176A (ja) * 2008-07-08 2010-01-28 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2012069797A (ja) * 2010-09-24 2012-04-05 Toyota Motor Corp 絶縁ゲート型トランジスタ
US20130164895A1 (en) * 2011-12-12 2013-06-27 Maxpower Semiconductor, Inc. Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
JP2015072999A (ja) * 2013-10-02 2015-04-16 株式会社デンソー 炭化珪素半導体装置
JP6428489B2 (ja) * 2014-09-16 2018-11-28 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2016042738A1 (ja) * 2014-09-16 2016-03-24 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6234606B2 (ja) * 2014-10-20 2017-11-22 三菱電機株式会社 半導体装置
JP6354525B2 (ja) * 2014-11-06 2018-07-11 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2016181617A (ja) * 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
JP6367760B2 (ja) * 2015-06-11 2018-08-01 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法

Also Published As

Publication number Publication date
US20180261673A1 (en) 2018-09-13
US10177234B2 (en) 2019-01-08
CN108574001B (zh) 2021-02-19
JP2018152455A (ja) 2018-09-27
CN108574001A (zh) 2018-09-25

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