JP2018152455A5 - - Google Patents

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Publication number
JP2018152455A5
JP2018152455A5 JP2017047334A JP2017047334A JP2018152455A5 JP 2018152455 A5 JP2018152455 A5 JP 2018152455A5 JP 2017047334 A JP2017047334 A JP 2017047334A JP 2017047334 A JP2017047334 A JP 2017047334A JP 2018152455 A5 JP2018152455 A5 JP 2018152455A5
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JP
Japan
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sample
region
thickness
ion implantation
depth
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JP2017047334A
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English (en)
Japanese (ja)
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JP6717242B2 (ja
JP2018152455A (ja
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Priority to JP2017047334A priority Critical patent/JP6717242B2/ja
Priority claimed from JP2017047334A external-priority patent/JP6717242B2/ja
Priority to CN201810193710.9A priority patent/CN108574001B/zh
Priority to US15/916,790 priority patent/US10177234B2/en
Publication of JP2018152455A publication Critical patent/JP2018152455A/ja
Publication of JP2018152455A5 publication Critical patent/JP2018152455A5/ja
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Publication of JP6717242B2 publication Critical patent/JP6717242B2/ja
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JP2017047334A 2017-03-13 2017-03-13 半導体装置 Active JP6717242B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017047334A JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置
CN201810193710.9A CN108574001B (zh) 2017-03-13 2018-03-09 半导体装置
US15/916,790 US10177234B2 (en) 2017-03-13 2018-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017047334A JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置

Publications (3)

Publication Number Publication Date
JP2018152455A JP2018152455A (ja) 2018-09-27
JP2018152455A5 true JP2018152455A5 (enExample) 2019-06-27
JP6717242B2 JP6717242B2 (ja) 2020-07-01

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ID=63445040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017047334A Active JP6717242B2 (ja) 2017-03-13 2017-03-13 半導体装置

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US (1) US10177234B2 (enExample)
JP (1) JP6717242B2 (enExample)
CN (1) CN108574001B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7279587B2 (ja) * 2018-09-25 2023-05-23 豊田合成株式会社 半導体装置の製造方法
DE102020202053A1 (de) * 2020-02-19 2021-08-19 Robert Bosch Gesellschaft mit beschränkter Haftung Mosfet mit sättigungskontakt und verfahren zum bilden eines mosfet mit sättigungskontakt

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269518A (ja) * 1999-03-18 2000-09-29 Toshiba Corp 電力用半導体素子及び半導体層の形成方法
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2010021176A (ja) * 2008-07-08 2010-01-28 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2012069797A (ja) * 2010-09-24 2012-04-05 Toyota Motor Corp 絶縁ゲート型トランジスタ
US20130164895A1 (en) * 2011-12-12 2013-06-27 Maxpower Semiconductor, Inc. Trench-Gated Power Devices with Two Types of Trenches and Reliable Polycidation
JP2015072999A (ja) * 2013-10-02 2015-04-16 株式会社デンソー 炭化珪素半導体装置
JP6428489B2 (ja) * 2014-09-16 2018-11-28 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2016042738A1 (ja) * 2014-09-16 2016-03-24 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6234606B2 (ja) * 2014-10-20 2017-11-22 三菱電機株式会社 半導体装置
JP6354525B2 (ja) * 2014-11-06 2018-07-11 株式会社デンソー 炭化珪素半導体装置の製造方法
JP2016181617A (ja) * 2015-03-24 2016-10-13 株式会社デンソー 半導体装置
JP6367760B2 (ja) * 2015-06-11 2018-08-01 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法

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