JP2018518013A5 - 流体導管が埋め込まれた半導体製造装置及び導管の形成方法 - Google Patents
流体導管が埋め込まれた半導体製造装置及び導管の形成方法 Download PDFInfo
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- JP2018518013A5 JP2018518013A5 JP2017554453A JP2017554453A JP2018518013A5 JP 2018518013 A5 JP2018518013 A5 JP 2018518013A5 JP 2017554453 A JP2017554453 A JP 2017554453A JP 2017554453 A JP2017554453 A JP 2017554453A JP 2018518013 A5 JP2018518013 A5 JP 2018518013A5
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- manufacturing apparatus
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- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 title description 2
- 239000012530 fluid Substances 0.000 title 1
- 230000000996 additive Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
Description
又、本発明による代表的な方法は、アディティブ製造処理を用いてイオン注入装置の構成要素内に埋め込まれる導管であって、この導管の内面上に形成された一組の隆起表面特徴部を有する当該導管を形成するステップを具えることができる。この一組の隆起表面特徴部は前記導管の内部領域内に延在させることができる。
次に、図９を参照するに、本発明による半導体製造装置の構成要素内に埋め込む導管を形成する代表的な方法６００を示す流れ図を示している。この方法６００を図１Ａ〜８Ｂに示す開示と関連して説明する。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/692,189 | 2015-04-21 | ||
| US14/692,189 US10486232B2 (en) | 2015-04-21 | 2015-04-21 | Semiconductor manufacturing device with embedded fluid conduits |
| PCT/US2016/028076 WO2016172030A1 (en) | 2015-04-21 | 2016-04-18 | Semiconductor manufacturing device with embedded fluid conduits |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018518013A JP2018518013A (ja) | 2018-07-05 |
| JP2018518013A5 true JP2018518013A5 (ja) | 2019-01-10 |
| JP6797132B2 JP6797132B2 (ja) | 2020-12-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017554453A Active JP6797132B2 (ja) | 2015-04-21 | 2016-04-18 | 流体導管が埋め込まれた半導体製造装置及び導管の形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10486232B2 (ja) |
| JP (1) | JP6797132B2 (ja) |
| KR (1) | KR102550449B1 (ja) |
| CN (1) | CN107530775B (ja) |
| TW (1) | TWI680817B (ja) |
| WO (1) | WO2016172030A1 (ja) |
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| CN112136202B (zh) * | 2018-06-08 | 2024-04-12 | 应用材料公司 | 用于在等离子体增强化学气相沉积腔室中抑制寄生等离子体的设备 |
| US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
| CN109285752A (zh) * | 2018-10-16 | 2019-01-29 | 中国工程物理研究院核物理与化学研究所 | 一种用于离子源束流的冷却装置 |
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| US20230187229A1 (en) * | 2020-04-06 | 2023-06-15 | Lam Research Corporation | Ceramic additive manufacturing techniques for gas injectors |
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| US20230019430A1 (en) * | 2021-07-13 | 2023-01-19 | Changxin Memory Technologies, Inc. | Gas injector and diffusion furnace device |
| CN114433878B (zh) * | 2022-01-17 | 2023-04-07 | 成都飞机工业（集团）有限责任公司 | 一种含内流体通道的管道及其加工方法 |
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2015
- 2015-04-21 US US14/692,189 patent/US10486232B2/en active Active
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2016
- 2016-04-06 TW TW105110678A patent/TWI680817B/zh active
- 2016-04-18 JP JP2017554453A patent/JP6797132B2/ja active Active
- 2016-04-18 KR KR1020177033230A patent/KR102550449B1/ko active IP Right Grant
- 2016-04-18 WO PCT/US2016/028076 patent/WO2016172030A1/en active Application Filing
- 2016-04-18 CN CN201680023030.1A patent/CN107530775B/zh active Active
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- 2019-08-14 US US16/540,801 patent/US11213891B2/en active Active
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- 2021-11-30 US US17/538,563 patent/US20220080504A1/en active Pending
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