ITUB20161081A1 - Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore - Google Patents

Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore

Info

Publication number
ITUB20161081A1
ITUB20161081A1 ITUB2016A001081A ITUB20161081A ITUB20161081A1 IT UB20161081 A1 ITUB20161081 A1 IT UB20161081A1 IT UB2016A001081 A ITUB2016A001081 A IT UB2016A001081A IT UB20161081 A ITUB20161081 A IT UB20161081A IT UB20161081 A1 ITUB20161081 A1 IT UB20161081A1
Authority
IT
Italy
Prior art keywords
semiconductor device
manufacturing
conductive region
buried conductive
buried
Prior art date
Application number
ITUB2016A001081A
Other languages
English (en)
Inventor
Fabrizio Fausto Renzo Toia
Claudio Contiero
Elisabetta Pizzi
Simone Dario Mariani
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to ITUB2016A001081A priority Critical patent/ITUB20161081A1/it
Priority to US15/250,638 priority patent/US10062757B2/en
Publication of ITUB20161081A1 publication Critical patent/ITUB20161081A1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
ITUB2016A001081A 2016-02-25 2016-02-25 Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore ITUB20161081A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITUB2016A001081A ITUB20161081A1 (it) 2016-02-25 2016-02-25 Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore
US15/250,638 US10062757B2 (en) 2016-02-25 2016-08-29 Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITUB2016A001081A ITUB20161081A1 (it) 2016-02-25 2016-02-25 Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore

Publications (1)

Publication Number Publication Date
ITUB20161081A1 true ITUB20161081A1 (it) 2017-08-25

Family

ID=55949002

Family Applications (1)

Application Number Title Priority Date Filing Date
ITUB2016A001081A ITUB20161081A1 (it) 2016-02-25 2016-02-25 Dispositivo a semiconduttore con regione conduttiva sepolta, e metodo di fabbricazione del dispositivo a semiconduttore

Country Status (2)

Country Link
US (1) US10062757B2 (it)
IT (1) ITUB20161081A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10461152B2 (en) 2017-07-10 2019-10-29 Globalfoundries Inc. Radio frequency switches with air gap structures
US10833153B2 (en) 2017-09-13 2020-11-10 Globalfoundries Inc. Switch with local silicon on insulator (SOI) and deep trench isolation
DE102018124675A1 (de) 2017-11-30 2019-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Glühen von Film bei unterschiedlichen Temperaturen und dadurch ausgebildete Strukturen
US10748760B2 (en) * 2017-11-30 2020-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Varying temperature anneal for film and structures formed thereby
IT201800000947A1 (it) * 2018-01-15 2019-07-15 St Microelectronics Srl Piastrina a semiconduttore con condensatore sepolto, e metodo di fabbricazione della piastrina a semiconduttore
US10446643B2 (en) * 2018-01-22 2019-10-15 Globalfoundries Inc. Sealed cavity structures with a planar surface
US11056382B2 (en) * 2018-03-19 2021-07-06 Globalfoundries U.S. Inc. Cavity formation within and under semiconductor devices
US10796942B2 (en) * 2018-08-20 2020-10-06 Stmicroelectronics S.R.L. Semiconductor structure with partially embedded insulation region
US11410872B2 (en) 2018-11-30 2022-08-09 Globalfoundries U.S. Inc. Oxidized cavity structures within and under semiconductor devices
US10923577B2 (en) 2019-01-07 2021-02-16 Globalfoundries U.S. Inc. Cavity structures under shallow trench isolation regions
US11127816B2 (en) 2020-02-14 2021-09-21 Globalfoundries U.S. Inc. Heterojunction bipolar transistors with one or more sealed airgap

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020076896A1 (en) * 2000-12-15 2002-06-20 Farrar Paul A. Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials
US20030102576A1 (en) * 2001-11-30 2003-06-05 Nec Electronics Corporation Alignment pattern and method of forming the same
EP1427010A1 (en) * 2002-11-29 2004-06-09 STMicroelectronics S.r.l. Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method
US20050258424A1 (en) * 2004-03-10 2005-11-24 Bernard Sautreuil Integrated capacitor
EP1881527A1 (en) * 2006-07-17 2008-01-23 STMicroelectronics S.r.l. Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured
US7456071B2 (en) * 2002-10-03 2008-11-25 Stmicroelectronics S.A. Method for forming a strongly-conductive buried layer in a semiconductor substrate
US20110084356A1 (en) * 2008-06-02 2011-04-14 Nxp B.V. Local buried layer forming method and semiconductor device having such a layer
US20110101452A1 (en) * 2008-05-28 2011-05-05 Nxp B.V. Trench gate semiconductor device and method of manufacturing thereof
US8173513B2 (en) * 2004-03-19 2012-05-08 Stmicroelectronics S.R.L. Method for manufacturing a semiconductor pressure sensor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120098142A1 (en) 2010-10-26 2012-04-26 Stmicroelectronics S.R.L. Electrical contact for a deep buried layer in a semi-conductor device
JP5983122B2 (ja) * 2012-07-17 2016-08-31 富士通セミコンダクター株式会社 半導体装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020076896A1 (en) * 2000-12-15 2002-06-20 Farrar Paul A. Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials
US20030102576A1 (en) * 2001-11-30 2003-06-05 Nec Electronics Corporation Alignment pattern and method of forming the same
US7456071B2 (en) * 2002-10-03 2008-11-25 Stmicroelectronics S.A. Method for forming a strongly-conductive buried layer in a semiconductor substrate
EP1427010A1 (en) * 2002-11-29 2004-06-09 STMicroelectronics S.r.l. Manufacturing method for a semiconductor substrate comprising at least a buried cavity and devices formed with this method
US20050258424A1 (en) * 2004-03-10 2005-11-24 Bernard Sautreuil Integrated capacitor
US8173513B2 (en) * 2004-03-19 2012-05-08 Stmicroelectronics S.R.L. Method for manufacturing a semiconductor pressure sensor
EP1881527A1 (en) * 2006-07-17 2008-01-23 STMicroelectronics S.r.l. Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured
US20110101452A1 (en) * 2008-05-28 2011-05-05 Nxp B.V. Trench gate semiconductor device and method of manufacturing thereof
US20110084356A1 (en) * 2008-06-02 2011-04-14 Nxp B.V. Local buried layer forming method and semiconductor device having such a layer

Also Published As

Publication number Publication date
US20170250253A1 (en) 2017-08-31
US10062757B2 (en) 2018-08-28

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