JP6705151B2 - 原子発振器 - Google Patents

原子発振器 Download PDF

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Publication number
JP6705151B2
JP6705151B2 JP2015210824A JP2015210824A JP6705151B2 JP 6705151 B2 JP6705151 B2 JP 6705151B2 JP 2015210824 A JP2015210824 A JP 2015210824A JP 2015210824 A JP2015210824 A JP 2015210824A JP 6705151 B2 JP6705151 B2 JP 6705151B2
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JP
Japan
Prior art keywords
layer
light
light source
atomic oscillator
electric field
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JP2015210824A
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English (en)
Japanese (ja)
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JP2017084937A5 (https=
JP2017084937A (ja
Inventor
哲朗 西田
哲朗 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2015210824A priority Critical patent/JP6705151B2/ja
Priority to CN201610921948.XA priority patent/CN107017881B/zh
Priority to US15/332,185 priority patent/US10097191B2/en
Priority to EP16195500.0A priority patent/EP3171232B1/en
Publication of JP2017084937A publication Critical patent/JP2017084937A/ja
Publication of JP2017084937A5 publication Critical patent/JP2017084937A5/ja
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
    • G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ecology (AREA)
  • Semiconductor Lasers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
JP2015210824A 2015-10-27 2015-10-27 原子発振器 Active JP6705151B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015210824A JP6705151B2 (ja) 2015-10-27 2015-10-27 原子発振器
CN201610921948.XA CN107017881B (zh) 2015-10-27 2016-10-21 原子振荡器
US15/332,185 US10097191B2 (en) 2015-10-27 2016-10-24 Atomic oscillator
EP16195500.0A EP3171232B1 (en) 2015-10-27 2016-10-25 Atomic oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015210824A JP6705151B2 (ja) 2015-10-27 2015-10-27 原子発振器

Publications (3)

Publication Number Publication Date
JP2017084937A JP2017084937A (ja) 2017-05-18
JP2017084937A5 JP2017084937A5 (https=) 2018-10-25
JP6705151B2 true JP6705151B2 (ja) 2020-06-03

Family

ID=57208137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015210824A Active JP6705151B2 (ja) 2015-10-27 2015-10-27 原子発振器

Country Status (4)

Country Link
US (1) US10097191B2 (https=)
EP (1) EP3171232B1 (https=)
JP (1) JP6705151B2 (https=)
CN (1) CN107017881B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6939344B2 (ja) * 2017-09-28 2021-09-22 セイコーエプソン株式会社 原子発振器およびシステム
CN119536417B (zh) * 2024-11-15 2025-11-25 西南石油大学 一种碱金属原子气室激光无磁加热控温装置及方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283836A (ja) 1996-04-09 1997-10-31 Matsushita Electric Ind Co Ltd 面発光型半導体レーザ装置
JP2003202529A (ja) * 2001-03-13 2003-07-18 Ricoh Co Ltd 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム
US6636539B2 (en) 2001-05-25 2003-10-21 Novalux, Inc. Method and apparatus for controlling thermal variations in an optical device
CN100364192C (zh) * 2003-04-28 2008-01-23 松下电器产业株式会社 半导体发光元件及其制造方法
US20060182162A1 (en) * 2003-07-29 2006-08-17 Takayuki Yanagisawa Solid laser exciting module and laser oscillator
JP2005197549A (ja) * 2004-01-09 2005-07-21 Yokogawa Electric Corp 面発光レーザ
JP2006216862A (ja) * 2005-02-04 2006-08-17 Nec Corp 変調器集積面発光レーザ
US7983572B2 (en) 2005-06-30 2011-07-19 Finisar Corporation Electro-absorption modulator integrated with a vertical cavity surface emitting laser
JP4940987B2 (ja) * 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US7593436B2 (en) * 2006-06-16 2009-09-22 Vi Systems Gmbh Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
JP2009010248A (ja) * 2007-06-29 2009-01-15 Canon Inc 面発光レーザおよびその製造方法
JP2009088445A (ja) * 2007-10-03 2009-04-23 Seiko Epson Corp 光素子
US20090256638A1 (en) * 2008-03-28 2009-10-15 Michael Rosenbluh Atomic frequency standard based on enhanced modulation efficiency semiconductor lasers
WO2009125635A1 (ja) * 2008-04-08 2009-10-15 日本電気株式会社 半導体レーザ及び半導体レーザの変調方法
JP5532679B2 (ja) * 2008-07-03 2014-06-25 セイコーエプソン株式会社 原子発振器の光学系及び原子発振器
CN101667715B (zh) * 2008-09-03 2010-10-27 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法
JP5256999B2 (ja) * 2008-10-29 2013-08-07 セイコーエプソン株式会社 原子発振器の物理部
JP5407570B2 (ja) * 2009-06-09 2014-02-05 セイコーエプソン株式会社 原子発振器
JP5540619B2 (ja) * 2009-09-16 2014-07-02 セイコーエプソン株式会社 原子発振器の制御方法
JP5892320B2 (ja) * 2012-01-11 2016-03-23 セイコーエプソン株式会社 原子発振器用の光学モジュールおよび原子発振器
JP6119295B2 (ja) * 2013-02-18 2017-04-26 セイコーエプソン株式会社 量子干渉装置、原子発振器および移動体
JP6308037B2 (ja) 2013-08-20 2018-04-11 株式会社リコー ヒーター基板、アルカリ金属セルユニット及び原子発振器
JP6323649B2 (ja) * 2013-12-20 2018-05-16 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
JP2015177000A (ja) * 2014-03-14 2015-10-05 株式会社リコー 面発光レーザ、面発光レーザ素子及び原子発振器

Also Published As

Publication number Publication date
CN107017881A (zh) 2017-08-04
CN107017881B (zh) 2021-06-01
EP3171232B1 (en) 2018-10-24
JP2017084937A (ja) 2017-05-18
US10097191B2 (en) 2018-10-09
EP3171232A1 (en) 2017-05-24
US20170117911A1 (en) 2017-04-27

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