CN107017881B - 原子振荡器 - Google Patents

原子振荡器 Download PDF

Info

Publication number
CN107017881B
CN107017881B CN201610921948.XA CN201610921948A CN107017881B CN 107017881 B CN107017881 B CN 107017881B CN 201610921948 A CN201610921948 A CN 201610921948A CN 107017881 B CN107017881 B CN 107017881B
Authority
CN
China
Prior art keywords
layer
light
light source
atomic oscillator
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610921948.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN107017881A (zh
Inventor
西田哲朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microcore Technology Co
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN107017881A publication Critical patent/CN107017881A/zh
Application granted granted Critical
Publication of CN107017881B publication Critical patent/CN107017881B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G04—HOROLOGY
    • G04F—TIME-INTERVAL MEASURING
    • G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
    • G04F5/145—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks using Coherent Population Trapping
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ecology (AREA)
  • Semiconductor Lasers (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
CN201610921948.XA 2015-10-27 2016-10-21 原子振荡器 Active CN107017881B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-210824 2015-10-27
JP2015210824A JP6705151B2 (ja) 2015-10-27 2015-10-27 原子発振器

Publications (2)

Publication Number Publication Date
CN107017881A CN107017881A (zh) 2017-08-04
CN107017881B true CN107017881B (zh) 2021-06-01

Family

ID=57208137

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610921948.XA Active CN107017881B (zh) 2015-10-27 2016-10-21 原子振荡器

Country Status (4)

Country Link
US (1) US10097191B2 (https=)
EP (1) EP3171232B1 (https=)
JP (1) JP6705151B2 (https=)
CN (1) CN107017881B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6939344B2 (ja) * 2017-09-28 2021-09-22 セイコーエプソン株式会社 原子発振器およびシステム
CN119536417B (zh) * 2024-11-15 2025-11-25 西南石油大学 一种碱金属原子气室激光无磁加热控温装置及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1736009A (zh) * 2003-04-28 2006-02-15 松下电器产业株式会社 半导体发光元件及其制造方法
JP2010287937A (ja) * 2009-06-09 2010-12-24 Seiko Epson Corp 原子発振器
CN102025372A (zh) * 2009-09-16 2011-04-20 精工爱普生株式会社 原子振荡器及原子振荡器的控制方法
CN103997339A (zh) * 2013-02-18 2014-08-20 精工爱普生株式会社 量子干涉装置、原子振荡器和移动体
CN104734014A (zh) * 2013-12-20 2015-06-24 精工爱普生株式会社 面发光激光器以及原子振荡器

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283836A (ja) 1996-04-09 1997-10-31 Matsushita Electric Ind Co Ltd 面発光型半導体レーザ装置
JP2003202529A (ja) * 2001-03-13 2003-07-18 Ricoh Co Ltd 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム
US6636539B2 (en) 2001-05-25 2003-10-21 Novalux, Inc. Method and apparatus for controlling thermal variations in an optical device
US20060182162A1 (en) * 2003-07-29 2006-08-17 Takayuki Yanagisawa Solid laser exciting module and laser oscillator
JP2005197549A (ja) * 2004-01-09 2005-07-21 Yokogawa Electric Corp 面発光レーザ
JP2006216862A (ja) * 2005-02-04 2006-08-17 Nec Corp 変調器集積面発光レーザ
US7983572B2 (en) 2005-06-30 2011-07-19 Finisar Corporation Electro-absorption modulator integrated with a vertical cavity surface emitting laser
JP4940987B2 (ja) * 2006-03-20 2012-05-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
US7593436B2 (en) * 2006-06-16 2009-09-22 Vi Systems Gmbh Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer
JP2009010248A (ja) * 2007-06-29 2009-01-15 Canon Inc 面発光レーザおよびその製造方法
JP2009088445A (ja) * 2007-10-03 2009-04-23 Seiko Epson Corp 光素子
US20090256638A1 (en) * 2008-03-28 2009-10-15 Michael Rosenbluh Atomic frequency standard based on enhanced modulation efficiency semiconductor lasers
WO2009125635A1 (ja) * 2008-04-08 2009-10-15 日本電気株式会社 半導体レーザ及び半導体レーザの変調方法
JP5532679B2 (ja) * 2008-07-03 2014-06-25 セイコーエプソン株式会社 原子発振器の光学系及び原子発振器
CN101667715B (zh) * 2008-09-03 2010-10-27 中国科学院半导体研究所 一种单模高功率垂直腔面发射激光器及其制作方法
JP5256999B2 (ja) * 2008-10-29 2013-08-07 セイコーエプソン株式会社 原子発振器の物理部
JP5892320B2 (ja) * 2012-01-11 2016-03-23 セイコーエプソン株式会社 原子発振器用の光学モジュールおよび原子発振器
JP6308037B2 (ja) 2013-08-20 2018-04-11 株式会社リコー ヒーター基板、アルカリ金属セルユニット及び原子発振器
JP2015177000A (ja) * 2014-03-14 2015-10-05 株式会社リコー 面発光レーザ、面発光レーザ素子及び原子発振器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1736009A (zh) * 2003-04-28 2006-02-15 松下电器产业株式会社 半导体发光元件及其制造方法
JP2010287937A (ja) * 2009-06-09 2010-12-24 Seiko Epson Corp 原子発振器
CN102025372A (zh) * 2009-09-16 2011-04-20 精工爱普生株式会社 原子振荡器及原子振荡器的控制方法
CN103997339A (zh) * 2013-02-18 2014-08-20 精工爱普生株式会社 量子干涉装置、原子振荡器和移动体
CN104734014A (zh) * 2013-12-20 2015-06-24 精工爱普生株式会社 面发光激光器以及原子振荡器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
准分子宽带泵浦碱金属激光器实现铷激光输出;岳德胜等;《准分子宽带泵浦碱金属激光器实现铷激光输出》;20130115;第25卷(第1期);全文 *

Also Published As

Publication number Publication date
CN107017881A (zh) 2017-08-04
EP3171232B1 (en) 2018-10-24
JP2017084937A (ja) 2017-05-18
JP6705151B2 (ja) 2020-06-03
US10097191B2 (en) 2018-10-09
EP3171232A1 (en) 2017-05-24
US20170117911A1 (en) 2017-04-27

Similar Documents

Publication Publication Date Title
JP6323649B2 (ja) 面発光レーザーおよび原子発振器
US9300308B2 (en) Light emitting device and atomic oscillator
JP6323651B2 (ja) 面発光レーザーおよび原子発振器
CN104734012A (zh) 面发光激光器以及原子振荡器
JP6410008B2 (ja) 面発光レーザーおよび原子発振器
CN104734010A (zh) 面发光激光器以及原子振荡器
JP6274404B2 (ja) 面発光レーザーおよび原子発振器
CN107017881B (zh) 原子振荡器
CN104734008A (zh) 面发光激光器以及原子振荡器
CN104734009A (zh) 面发光激光器以及原子振荡器
JP6786961B2 (ja) 面発光レーザーおよび原子発振器
JP2016086140A (ja) 面発光レーザー、原子発振器、および面発光レーザーの製造方法
US20170117910A1 (en) Light source and atomic oscillator
US10224943B2 (en) Atomic oscillator
JP2015119150A (ja) 面発光レーザーおよび原子発振器
JP2015119139A (ja) 面発光レーザーおよび原子発振器
JP2015119148A (ja) 面発光レーザーおよび原子発振器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20221114

Address after: Arizona

Patentee after: Microcore Technology Co.

Address before: Tokyo

Patentee before: Seiko Epson Corp.