JP6704813B2 - 計測装置、露光装置、および物品の製造方法 - Google Patents

計測装置、露光装置、および物品の製造方法 Download PDF

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Publication number
JP6704813B2
JP6704813B2 JP2016154946A JP2016154946A JP6704813B2 JP 6704813 B2 JP6704813 B2 JP 6704813B2 JP 2016154946 A JP2016154946 A JP 2016154946A JP 2016154946 A JP2016154946 A JP 2016154946A JP 6704813 B2 JP6704813 B2 JP 6704813B2
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JP
Japan
Prior art keywords
substrate
distribution
height
processing unit
measuring device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016154946A
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English (en)
Japanese (ja)
Other versions
JP2018022114A5 (https=
JP2018022114A (ja
Inventor
浩平 前田
浩平 前田
高橋　彰宏
彰宏 高橋
磨奈人 古澤
磨奈人 古澤
英晃 本間
英晃 本間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016154946A priority Critical patent/JP6704813B2/ja
Priority to KR1020197005133A priority patent/KR102137986B1/ko
Priority to CN201780048850.0A priority patent/CN109564397B/zh
Priority to PCT/JP2017/022039 priority patent/WO2018025515A1/ja
Publication of JP2018022114A publication Critical patent/JP2018022114A/ja
Publication of JP2018022114A5 publication Critical patent/JP2018022114A5/ja
Application granted granted Critical
Publication of JP6704813B2 publication Critical patent/JP6704813B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2016154946A 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法 Active JP6704813B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016154946A JP6704813B2 (ja) 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法
KR1020197005133A KR102137986B1 (ko) 2016-08-05 2017-06-15 계측 장치, 노광 장치 및 물품의 제조 방법
CN201780048850.0A CN109564397B (zh) 2016-08-05 2017-06-15 测量装置、曝光装置以及物品的制造方法
PCT/JP2017/022039 WO2018025515A1 (ja) 2016-08-05 2017-06-15 計測装置、露光装置、および物品の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016154946A JP6704813B2 (ja) 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2018022114A JP2018022114A (ja) 2018-02-08
JP2018022114A5 JP2018022114A5 (https=) 2019-09-05
JP6704813B2 true JP6704813B2 (ja) 2020-06-03

Family

ID=61073384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016154946A Active JP6704813B2 (ja) 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法

Country Status (4)

Country Link
JP (1) JP6704813B2 (https=)
KR (1) KR102137986B1 (https=)
CN (1) CN109564397B (https=)
WO (1) WO2018025515A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021001119A1 (en) * 2019-07-04 2021-01-07 Asml Netherlands B.V. Non-correctable error in metrology
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
JP7475185B2 (ja) * 2020-04-10 2024-04-26 キヤノン株式会社 計測方法、インプリント装置及び物品の製造方法
JP7489829B2 (ja) * 2020-05-21 2024-05-24 キヤノン株式会社 処理装置、計測方法および物品製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06249621A (ja) * 1993-02-24 1994-09-09 Sumitomo Heavy Ind Ltd 膜厚分布計測装置
JP4405241B2 (ja) * 2002-11-19 2010-01-27 株式会社 液晶先端技術開発センター 液晶ディスプレイ用ガラス基板の露光方法および露光装置ならびに処理装置
US20050134816A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
JP2006156508A (ja) 2004-11-26 2006-06-15 Nikon Corp 目標値決定方法、移動方法及び露光方法、露光装置及びリソグラフィシステム
JP2006349351A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd ３次元微細形状測定方法
EP3291010A1 (en) * 2006-08-31 2018-03-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
JP5406623B2 (ja) 2009-08-10 2014-02-05 キヤノン株式会社 計測装置、露光装置及びデバイスの製造方法
JP2012132754A (ja) * 2010-12-21 2012-07-12 Panasonic Corp テクスチャ評価装置、テクスチャ評価方法
WO2013061976A1 (ja) * 2011-10-24 2013-05-02 株式会社日立製作所 形状検査方法およびその装置
JP6014572B2 (ja) 2013-11-06 2016-10-25 Ｊｆｅスチール株式会社 厚み測定装置、厚み測定方法及び腐食深さ測定方法
JP6491833B2 (ja) * 2014-07-31 2019-03-27 株式会社日立ハイテクノロジーズ 高さ測定装置
US20170363952A1 (en) * 2014-12-19 2017-12-21 Hoya Corporation Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
WO2018025515A1 (ja) 2018-02-08
CN109564397A (zh) 2019-04-02
CN109564397B (zh) 2021-01-29
KR102137986B1 (ko) 2020-07-27
JP2018022114A (ja) 2018-02-08
KR20190032486A (ko) 2019-03-27

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