CN109564397B - 测量装置、曝光装置以及物品的制造方法 - Google Patents

测量装置、曝光装置以及物品的制造方法 Download PDF

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Publication number
CN109564397B
CN109564397B CN201780048850.0A CN201780048850A CN109564397B CN 109564397 B CN109564397 B CN 109564397B CN 201780048850 A CN201780048850 A CN 201780048850A CN 109564397 B CN109564397 B CN 109564397B
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China
Prior art keywords
substrate
distribution
height
detection
processing unit
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CN201780048850.0A
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English (en)
Chinese (zh)
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CN109564397A (zh
Inventor
前田浩平
高桥彰宏
古泽磨奈人
本间英晃
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Publication of CN109564397A publication Critical patent/CN109564397A/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201780048850.0A 2016-08-05 2017-06-15 测量装置、曝光装置以及物品的制造方法 Active CN109564397B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-154946 2016-08-05
JP2016154946A JP6704813B2 (ja) 2016-08-05 2016-08-05 計測装置、露光装置、および物品の製造方法
PCT/JP2017/022039 WO2018025515A1 (ja) 2016-08-05 2017-06-15 計測装置、露光装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
CN109564397A CN109564397A (zh) 2019-04-02
CN109564397B true CN109564397B (zh) 2021-01-29

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CN201780048850.0A Active CN109564397B (zh) 2016-08-05 2017-06-15 测量装置、曝光装置以及物品的制造方法

Country Status (4)

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JP (1) JP6704813B2 (https=)
KR (1) KR102137986B1 (https=)
CN (1) CN109564397B (https=)
WO (1) WO2018025515A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021001119A1 (en) * 2019-07-04 2021-01-07 Asml Netherlands B.V. Non-correctable error in metrology
US11610296B2 (en) * 2020-01-09 2023-03-21 Kla Corporation Projection and distance segmentation algorithm for wafer defect detection
JP7475185B2 (ja) * 2020-04-10 2024-04-26 キヤノン株式会社 計測方法、インプリント装置及び物品の製造方法
JP7489829B2 (ja) * 2020-05-21 2024-05-24 キヤノン株式会社 処理装置、計測方法および物品製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06249621A (ja) * 1993-02-24 1994-09-09 Sumitomo Heavy Ind Ltd 膜厚分布計測装置
JP4405241B2 (ja) * 2002-11-19 2010-01-27 株式会社 液晶先端技術開発センター 液晶ディスプレイ用ガラス基板の露光方法および露光装置ならびに処理装置
US20050134816A1 (en) * 2003-12-22 2005-06-23 Asml Netherlands B.V. Lithographic apparatus, method of exposing a substrate, method of measurement, device manufacturing method, and device manufactured thereby
JP2006156508A (ja) 2004-11-26 2006-06-15 Nikon Corp 目標値決定方法、移動方法及び露光方法、露光装置及びリソグラフィシステム
JP2006349351A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd ３次元微細形状測定方法
EP3291010A1 (en) * 2006-08-31 2018-03-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
JP5406623B2 (ja) 2009-08-10 2014-02-05 キヤノン株式会社 計測装置、露光装置及びデバイスの製造方法
JP2012132754A (ja) * 2010-12-21 2012-07-12 Panasonic Corp テクスチャ評価装置、テクスチャ評価方法
WO2013061976A1 (ja) * 2011-10-24 2013-05-02 株式会社日立製作所 形状検査方法およびその装置
JP6014572B2 (ja) 2013-11-06 2016-10-25 Ｊｆｅスチール株式会社 厚み測定装置、厚み測定方法及び腐食深さ測定方法
JP6491833B2 (ja) * 2014-07-31 2019-03-27 株式会社日立ハイテクノロジーズ 高さ測定装置
US20170363952A1 (en) * 2014-12-19 2017-12-21 Hoya Corporation Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
WO2018025515A1 (ja) 2018-02-08
CN109564397A (zh) 2019-04-02
JP6704813B2 (ja) 2020-06-03
KR102137986B1 (ko) 2020-07-27
JP2018022114A (ja) 2018-02-08
KR20190032486A (ko) 2019-03-27

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