JP6693875B2 - 独立気泡構造を有する超高空隙体積研磨パッド - Google Patents
独立気泡構造を有する超高空隙体積研磨パッド Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims description 263
- 239000011800 void material Substances 0.000 title description 58
- 239000000463 material Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 44
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- 239000012948 isocyanate Substances 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
この例では、平均細孔サイズが以下の手順で測定された。試料は、剃刀の刃を用いてそれぞれの試料の四角から小さな矩形を切り取ることによって調製された。これらの試料は、カーボンテープ上に支持され、そして3.5〜5.0nmのコーティング層で30秒間に亘ってスパッタリングされた。それぞれの試料の画像が、走査型電子顕微鏡(「SEM」を用いて取得された。視野中に測定のために十分な細孔があることを確実にするように、適切な解像度が用いられた。画像が得られ、そして貯蔵された。
この例は、本発明の態様による研磨パッドよって得られるTEOS除去速度を示している。
この例は、本発明の態様による研磨パッドで得られるタングステン除去速度を示している。
この例は、本発明の態様による研磨パッドで得られる低減された欠陥性を示している。
この例は、1つの態様に従って、ガス処理および発泡の単一の工程を用いて本発明の研磨パッドを調製する方法を示している。
本発明は、以下の態様を含んでいる。
(1)多孔質ポリマー材料を含む化学機械研磨用の研磨パッドであって、該研磨パッドは独立した細孔を含んでおり、かつ70%以上の空隙体積分率を有している、研磨パッド。
(2)前記研磨パッドが、80%以上の空隙体積分率を有している、(1)記載の研磨パッド。
(3)前記多孔質ポリマー材料が、15D〜75Dの、ASTM D2240によるショアD硬度を有するポリマー樹脂から形成された、(1)記載の研磨パッド。
(4)前記多孔質ポリマー材料が、25D〜72Dの、ASTM D2240によるショアD硬度を有するポリマー樹脂から形成された、(3)記載の研磨パッド。
(5)前記細孔が、5μm〜200μmの平均細孔サイズを有する、(1)記載の研磨パッド。
(6)前記研磨パッドが、5%以上の圧縮性を有する、(1)記載の研磨パッド。
(7)前記研磨パッドが、1MPa以下の貯蔵弾性率を有する、(1)記載の研磨パッド。
(8)前記研磨パッドが、熱可塑性エラストマー、熱可塑性ポリウレタン、ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、エラストマーのゴム、スチレン系ポリマー、ポリ芳香族(polyaromatics)、フルオロポリマー、ポリイミド、架橋ポリウレタン、架橋ポリオレフィン、ポリエーテル、ポリエステル、ポリアクリレート、エラストマーのポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、それらの共重合体およびブロック共重合体、ならびにそれらの混合物およびブレンドからなる群から選択されるポリマー樹脂を含む、(1)記載の研磨パッド。
(9)前記パリマー樹脂が、熱可塑性ポリウレタンである、(8)記載の研磨パッド。
(10)研磨パッドを調製する方法であって、
(a)ポリマー樹脂を含む研磨パッド材料を準備すること、
(b)第1の高められた圧力で、該研磨パッド材料を不活性ガスに曝露すること、
(c)該研磨パッド材料の温度を、該研磨パッド材料のガラス転移温度超で、該研磨パッド材料の融点未満の第1の温度に上昇させることによって該研磨パッド材料を発泡させること、
(d)第2の高められた圧力で、該研磨パッド材料を不活性ガスに曝露すること、および
(e)該研磨パッド材料の温度を、該研磨パッド材料のガラス転移温度超で、該研磨パッド材料の融点未満の第2の温度に上昇させて、該研磨パッド材料を発泡させること、
を含む、方法。
(11)前記ガスが、窒素、二酸化炭素、またはそれらの組合わせを含む、(10)記載の方法。
(12)前記ガスが、二酸化炭素であり、かつ前記第1および第2の圧力が、1MPa〜20MPaである、(11)記載の方法。
(13)前記研磨パッドが、熱可塑性エラストマー、熱可塑性ポリウレタン、ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、エラストマーのゴム、スチレン系ポリマー、ポリ芳香族(polyaromatics)、フルオロポリマー、ポリイミド、架橋ポリウレタン、架橋ポリオレフィン、ポリエーテル、ポリエステル、ポリアクリレート、エラストマーのポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、それらの共重合体およびブロック共重合体、ならびにそれらの混合物およびブレンドからなる群から選択されるポリマー樹脂を含む、(10)記載の方法。
(14)前記ポリマー樹脂が、熱可塑性ポリウレタンである、(12)記載の方法。
(15)(a)研磨される基材を準備すること、
(b)該基材を、(1)記載の研磨パッドおよび研磨組成物を含む研磨系と接触させること、ならびに、
(c)該基材の少なくとも一部を該研磨系で削り取って、該基材を研磨すること、
を含む、基材の研磨方法。
Claims (6)
- 研磨パッドを調製する方法であって、
(a)ポリマー樹脂を含む研磨パッド材料を準備すること、
(b)第1の高められた圧力で、該研磨パッド材料を不活性ガスに曝露すること、
(c)該研磨パッド材料の温度を、該研磨パッド材料のガラス転移温度超で、該研磨パッド材料の融点未満の第1の温度に上昇させることによって該研磨パッド材料を発泡させること、
(d)第2の高められた圧力で、該研磨パッド材料を不活性ガスに曝露すること、および
(e)該研磨パッド材料の温度を、該研磨パッド材料のガラス転移温度超で、該研磨パッド材料の融点未満の第2の温度に上昇させて、該研磨パッド材料を発泡させること、
を含み、
該研磨パッドが、独立気泡を含み、該独立気泡は、15μm〜200μmの平均細孔サイズを有している、
方法。 - 前記不活性ガスが、窒素、二酸化炭素、またはそれらの組合わせを含む、請求項1記載の方法。
- 前記不活性ガスが、二酸化炭素であり、かつ前記第1の高められた圧力および第2の高められた圧力が、1MPa〜20MPaである、請求項2記載の方法。
- 前記研磨パッドが、熱可塑性エラストマー、熱可塑性ポリウレタン、ポリオレフィン、ポリカーボネート、ポリビニルアルコール、ナイロン、エラストマーのゴム、スチレン系ポリマー、ポリ芳香族(polyaromatics)、フルオロポリマー、ポリイミド、架橋ポリウレタン、架橋ポリオレフィン、ポリエーテル、ポリエステル、ポリアクリレート、エラストマーのポリエチレン、ポリテトラフルオロエチレン、ポリエチレンテレフタレート、ポリイミド、ポリアラミド、ポリアリーレン、ポリスチレン、ポリメチルメタクリレート、それらの共重合体およびブロック共重合体、ならびにそれらの混合物およびブレンドからなる群から選択されるポリマー樹脂を含む、請求項1記載の方法。
- 前記ポリマー樹脂が、熱可塑性ポリウレタンである、請求項3記載の方法。
- (a)研磨される基材を準備すること、
(b)該基材を、請求項1〜5のいずれか1項の方法によって調製された研磨パッドおよび研磨組成物を含む研磨系と接触させること、ならびに、
(c)該基材の少なくとも一部を該研磨系で削り取って、該基材を研磨すること、
を含む、基材の研磨方法。
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US13/973,639 | 2013-08-22 | ||
US13/973,639 US20150056895A1 (en) | 2013-08-22 | 2013-08-22 | Ultra high void volume polishing pad with closed pore structure |
PCT/US2014/052021 WO2015027026A1 (en) | 2013-08-22 | 2014-08-21 | Ultra high void volume polishing pad with closed pore structure |
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EP (1) | EP3036760A4 (ja) |
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201409248D0 (en) * | 2014-05-23 | 2014-07-09 | Zotefoams Plc | Method for producing three dimensional foam articles |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
KR102436416B1 (ko) | 2014-10-17 | 2022-08-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
TWI769988B (zh) * | 2015-10-07 | 2022-07-11 | 美商3M新設資產公司 | 拋光墊與系統及其製造與使用方法 |
TWI690388B (zh) * | 2015-10-30 | 2020-04-11 | 日商古河電氣工業股份有限公司 | 硏磨墊、使用硏磨墊的硏磨方法及該硏磨墊的使用方法 |
CN113103145B (zh) | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
KR102629800B1 (ko) | 2016-01-19 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 다공성 화학적 기계적 연마 패드들 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP2019160996A (ja) | 2018-03-13 | 2019-09-19 | 東芝メモリ株式会社 | 研磨パッド、半導体製造装置、および半導体装置の製造方法 |
US11826876B2 (en) | 2018-05-07 | 2023-11-28 | Applied Materials, Inc. | Hydrophilic and zeta potential tunable chemical mechanical polishing pads |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
US11813712B2 (en) | 2019-12-20 | 2023-11-14 | Applied Materials, Inc. | Polishing pads having selectively arranged porosity |
JP2021112808A (ja) * | 2020-01-21 | 2021-08-05 | ニッタ・デュポン株式会社 | 研磨パッド |
US20210323116A1 (en) * | 2020-04-18 | 2021-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Offset pore poromeric polishing pad |
US11806829B2 (en) | 2020-06-19 | 2023-11-07 | Applied Materials, Inc. | Advanced polishing pads and related polishing pad manufacturing methods |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5564965A (en) * | 1993-12-14 | 1996-10-15 | Shin-Etsu Handotai Co., Ltd. | Polishing member and wafer polishing apparatus |
US6126532A (en) * | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US7378454B2 (en) * | 2001-04-09 | 2008-05-27 | Toyo Tire & Rubber Co., Ltd. | Polyurethane composition and polishing pad |
US20050276967A1 (en) * | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
US6913517B2 (en) * | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
US7267607B2 (en) * | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7311862B2 (en) * | 2002-10-28 | 2007-12-25 | Cabot Microelectronics Corporation | Method for manufacturing microporous CMP materials having controlled pore size |
US7066801B2 (en) * | 2003-02-21 | 2006-06-27 | Dow Global Technologies, Inc. | Method of manufacturing a fixed abrasive material |
US6998166B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
US20040259479A1 (en) * | 2003-06-23 | 2004-12-23 | Cabot Microelectronics Corporation | Polishing pad for electrochemical-mechanical polishing |
US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
US7220167B2 (en) * | 2005-01-11 | 2007-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | Gentle chemical mechanical polishing (CMP) liftoff process |
US20060277371A1 (en) * | 2005-06-01 | 2006-12-07 | Intel Corporation | System and method to instrument references to shared memory |
KR101276962B1 (ko) * | 2006-07-28 | 2013-06-19 | 도레이 카부시키가이샤 | 상호 침입 고분자 그물형 구조체의 제조 방법 및 이를 이용한 연마 패드의 제조 방법 |
WO2008087797A1 (ja) * | 2007-01-15 | 2008-07-24 | Toyo Tire & Rubber Co., Ltd. | 研磨パッド及びその製造方法 |
JP5078527B2 (ja) * | 2007-09-28 | 2012-11-21 | 富士紡ホールディングス株式会社 | 研磨布 |
US20110076416A1 (en) * | 2008-05-26 | 2011-03-31 | Basf Se | Method of making porous materials and porous materials prepared thereof |
US8383003B2 (en) * | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
US20100015895A1 (en) * | 2008-07-15 | 2010-01-21 | Hendron Jeffrey J | Chemical mechanical polishing pad having electrospun polishing layer |
CN102159361B (zh) * | 2008-07-18 | 2014-11-05 | 3M创新有限公司 | 具有浮动单元的抛光垫以及制造和使用该抛光垫的方法 |
US8303375B2 (en) * | 2009-01-12 | 2012-11-06 | Novaplanar Technology, Inc. | Polishing pads for chemical mechanical planarization and/or other polishing methods |
JP5184448B2 (ja) * | 2009-06-23 | 2013-04-17 | 富士紡ホールディングス株式会社 | 研磨パッド、その製造方法および研磨加工方法 |
US8162728B2 (en) * | 2009-09-28 | 2012-04-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Dual-pore structure polishing pad |
JPWO2012077592A1 (ja) * | 2010-12-07 | 2014-05-19 | Jsr株式会社 | 化学機械研磨パッドおよびそれを用いた化学機械研磨方法 |
US9211628B2 (en) * | 2011-01-26 | 2015-12-15 | Nexplanar Corporation | Polishing pad with concentric or approximately concentric polygon groove pattern |
JP5687118B2 (ja) * | 2011-04-15 | 2015-03-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
RU2595788C2 (ru) * | 2012-03-16 | 2016-08-27 | Сэнт-Гобэн Эбрейзивс, Инк. | Абразивные продукты и способы чистовой обработки поверхностей |
-
2013
- 2013-08-22 US US13/973,639 patent/US20150056895A1/en not_active Abandoned
-
2014
- 2014-08-21 EP EP14837394.7A patent/EP3036760A4/en not_active Withdrawn
- 2014-08-21 SG SG11201601177SA patent/SG11201601177SA/en unknown
- 2014-08-21 CN CN201710887971.6A patent/CN107520743A/zh active Pending
- 2014-08-21 WO PCT/US2014/052021 patent/WO2015027026A1/en active Application Filing
- 2014-08-21 KR KR1020167007013A patent/KR20160045092A/ko not_active Application Discontinuation
- 2014-08-21 JP JP2016536441A patent/JP6693875B2/ja not_active Expired - Fee Related
- 2014-08-21 CN CN201480046528.0A patent/CN105474366A/zh active Pending
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- 2014-08-22 TW TW103129117A patent/TWI600501B/zh active
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US20150056895A1 (en) | 2015-02-26 |
EP3036760A1 (en) | 2016-06-29 |
TW201519999A (zh) | 2015-06-01 |
SG11201601177SA (en) | 2016-03-30 |
EP3036760A4 (en) | 2017-05-03 |
CN105474366A (zh) | 2016-04-06 |
SG10201801419XA (en) | 2018-03-28 |
JP2019171567A (ja) | 2019-10-10 |
TWI600501B (zh) | 2017-10-01 |
JP2016528054A (ja) | 2016-09-15 |
KR20160045092A (ko) | 2016-04-26 |
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