JP6688588B2 - 流動性膜の硬化浸透深度の改善及び応力調整 - Google Patents

流動性膜の硬化浸透深度の改善及び応力調整 Download PDF

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JP6688588B2
JP6688588B2 JP2015206868A JP2015206868A JP6688588B2 JP 6688588 B2 JP6688588 B2 JP 6688588B2 JP 2015206868 A JP2015206868 A JP 2015206868A JP 2015206868 A JP2015206868 A JP 2015206868A JP 6688588 B2 JP6688588 B2 JP 6688588B2
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oxygen
substrate
nitrogen
containing gas
dielectric layer
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JP2016096331A (ja
JP2016096331A5 (enExample
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チンメイ リャン，
チンメイ リャン，
チュン チャン リー，
チュン チャン リー，
ヨン スン，
ヨン スン，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015206868A 2014-10-29 2015-10-21 流動性膜の硬化浸透深度の改善及び応力調整 Active JP6688588B2 (ja)

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Application Number Priority Date Filing Date Title
US201462072217P 2014-10-29 2014-10-29
US62/072,217 2014-10-29
US14/577,943 US9570287B2 (en) 2014-10-29 2014-12-19 Flowable film curing penetration depth improvement and stress tuning
US14/577,943 2014-12-19

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JP2016096331A JP2016096331A (ja) 2016-05-26
JP2016096331A5 JP2016096331A5 (enExample) 2020-04-02
JP6688588B2 true JP6688588B2 (ja) 2020-04-28

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US (1) US9570287B2 (enExample)
JP (1) JP6688588B2 (enExample)
KR (2) KR101810087B1 (enExample)
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TW (1) TWI673826B (enExample)

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US11017998B2 (en) 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
KR102271768B1 (ko) * 2017-04-07 2021-06-30 어플라이드 머티어리얼스, 인코포레이티드 반응성 어닐링을 사용하는 갭충전
KR102616070B1 (ko) * 2017-04-07 2023-12-19 어플라이드 머티어리얼스, 인코포레이티드 비정질 실리콘 갭충전을 개선하기 위한 표면 개질
WO2018212999A1 (en) 2017-05-13 2018-11-22 Applied Materials, Inc. Cyclic flowable deposition and high-density plasma treatment proceses for high quality gap fill solutions
TWI722292B (zh) * 2017-07-05 2021-03-21 美商應用材料股份有限公司 氮含量高的氮化矽膜
US20200003937A1 (en) * 2018-06-29 2020-01-02 Applied Materials, Inc. Using flowable cvd to gap fill micro/nano structures for optical components
US10483099B1 (en) * 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
CN111128850A (zh) * 2018-10-30 2020-05-08 长鑫存储技术有限公司 沟槽隔离结构的形成方法及介电膜的形成方法
TWI894152B (zh) * 2019-07-02 2025-08-21 美商應用材料股份有限公司 形成積體電路結構的方法、整合系統與電腦可讀媒介
US11348784B2 (en) 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
US11658026B2 (en) 2020-10-23 2023-05-23 Applied Materials, Inc. Conformal silicon oxide film deposition
US12094709B2 (en) 2021-07-30 2024-09-17 Applied Materials, Inc. Plasma treatment process to densify oxide layers
CN118186373A (zh) * 2022-12-06 2024-06-14 拓荆科技股份有限公司 通过cvd方法形成高质量膜的方法
US20240363337A1 (en) * 2023-04-26 2024-10-31 Applied Materials, Inc. Methods for forming low-k dielectric materials
CN116607122A (zh) * 2023-06-07 2023-08-18 拓荆科技(上海)有限公司 一种硅氮聚合物的固化方法

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US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US20090093135A1 (en) * 2007-10-04 2009-04-09 Asm Japan K.K. Semiconductor manufacturing apparatus and method for curing material with uv light
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US8466067B2 (en) * 2009-10-05 2013-06-18 Applied Materials, Inc. Post-planarization densification
KR101837648B1 (ko) * 2010-01-07 2018-04-19 어플라이드 머티어리얼스, 인코포레이티드 라디칼-컴포넌트 ｃｖｄ를 위한 인­시츄 오존 경화
US8927388B2 (en) * 2012-11-15 2015-01-06 United Microelectronics Corp. Method of fabricating dielectric layer and shallow trench isolation

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US20160126089A1 (en) 2016-05-05
US9570287B2 (en) 2017-02-14
JP2016096331A (ja) 2016-05-26
KR101810087B1 (ko) 2018-01-18
TW201624612A (zh) 2016-07-01
KR20160052357A (ko) 2016-05-12
KR20170097593A (ko) 2017-08-28
KR102301006B1 (ko) 2021-09-09
TWI673826B (zh) 2019-10-01

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