TWI673826B - 可流動膜固化穿透深度之改進以及應力調諧 - Google Patents

可流動膜固化穿透深度之改進以及應力調諧 Download PDF

Info

Publication number
TWI673826B
TWI673826B TW104132716A TW104132716A TWI673826B TW I673826 B TWI673826 B TW I673826B TW 104132716 A TW104132716 A TW 104132716A TW 104132716 A TW104132716 A TW 104132716A TW I673826 B TWI673826 B TW I673826B
Authority
TW
Taiwan
Prior art keywords
substrate
oxygen
dielectric layer
nitrogen
layer
Prior art date
Application number
TW104132716A
Other languages
English (en)
Chinese (zh)
Other versions
TW201624612A (zh
Inventor
梁璟梅
Jingmei Liang
李晶粲
Jung Chan Lee
孫顒
Yong Sun
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201624612A publication Critical patent/TW201624612A/zh
Application granted granted Critical
Publication of TWI673826B publication Critical patent/TWI673826B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
TW104132716A 2014-10-29 2015-10-05 可流動膜固化穿透深度之改進以及應力調諧 TWI673826B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462072217P 2014-10-29 2014-10-29
US62/072,217 2014-10-29
US14/577,943 US9570287B2 (en) 2014-10-29 2014-12-19 Flowable film curing penetration depth improvement and stress tuning
US14/577,943 2014-12-19

Publications (2)

Publication Number Publication Date
TW201624612A TW201624612A (zh) 2016-07-01
TWI673826B true TWI673826B (zh) 2019-10-01

Family

ID=55853458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104132716A TWI673826B (zh) 2014-10-29 2015-10-05 可流動膜固化穿透深度之改進以及應力調諧

Country Status (5)

Country Link
US (1) US9570287B2 (enExample)
JP (1) JP6688588B2 (enExample)
KR (2) KR101810087B1 (enExample)
CN (1) CN105575768A (enExample)
TW (1) TWI673826B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10041167B2 (en) * 2015-02-23 2018-08-07 Applied Materials, Inc. Cyclic sequential processes for forming high quality thin films
US10468244B2 (en) 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US11017998B2 (en) 2016-08-30 2021-05-25 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10483102B2 (en) * 2017-04-07 2019-11-19 Applied Materials, Inc. Surface modification to improve amorphous silicon gapfill
CN110476239B (zh) 2017-04-07 2023-10-13 应用材料公司 使用反应性退火的间隙填充
JP7168586B2 (ja) 2017-05-13 2022-11-09 アプライド マテリアルズ インコーポレイテッド 高品質のボイド充填法のための流動性堆積及び高密度プラズマ処理工程サイクル
TWI722292B (zh) * 2017-07-05 2021-03-21 美商應用材料股份有限公司 氮含量高的氮化矽膜
US20200003937A1 (en) * 2018-06-29 2020-01-02 Applied Materials, Inc. Using flowable cvd to gap fill micro/nano structures for optical components
US10483099B1 (en) * 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
CN111128850A (zh) * 2018-10-30 2020-05-08 长鑫存储技术有限公司 沟槽隔离结构的形成方法及介电膜的形成方法
TWI894152B (zh) * 2019-07-02 2025-08-21 美商應用材料股份有限公司 形成積體電路結構的方法、整合系統與電腦可讀媒介
US11348784B2 (en) 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
US11658026B2 (en) * 2020-10-23 2023-05-23 Applied Materials, Inc. Conformal silicon oxide film deposition
US12094709B2 (en) 2021-07-30 2024-09-17 Applied Materials, Inc. Plasma treatment process to densify oxide layers
CN118186373A (zh) * 2022-12-06 2024-06-14 拓荆科技股份有限公司 通过cvd方法形成高质量膜的方法
US20240363337A1 (en) * 2023-04-26 2024-10-31 Applied Materials, Inc. Methods for forming low-k dielectric materials
CN116607122A (zh) * 2023-06-07 2023-08-18 拓荆科技(上海)有限公司 一种硅氮聚合物的固化方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018319A1 (en) * 2001-09-14 2004-01-29 Carlo Waldfried Ultraviolet curing processes for advanced low-k materials
US20120003840A1 (en) * 2010-01-07 2012-01-05 Applied Materials Inc. In-situ ozone cure for radical-component cvd

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090093135A1 (en) * 2007-10-04 2009-04-09 Asm Japan K.K. Semiconductor manufacturing apparatus and method for curing material with uv light
US7803722B2 (en) * 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US8466067B2 (en) * 2009-10-05 2013-06-18 Applied Materials, Inc. Post-planarization densification
US8927388B2 (en) * 2012-11-15 2015-01-06 United Microelectronics Corp. Method of fabricating dielectric layer and shallow trench isolation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040018319A1 (en) * 2001-09-14 2004-01-29 Carlo Waldfried Ultraviolet curing processes for advanced low-k materials
US20120003840A1 (en) * 2010-01-07 2012-01-05 Applied Materials Inc. In-situ ozone cure for radical-component cvd

Also Published As

Publication number Publication date
JP2016096331A (ja) 2016-05-26
KR20170097593A (ko) 2017-08-28
KR102301006B1 (ko) 2021-09-09
US9570287B2 (en) 2017-02-14
KR101810087B1 (ko) 2018-01-18
CN105575768A (zh) 2016-05-11
KR20160052357A (ko) 2016-05-12
US20160126089A1 (en) 2016-05-05
JP6688588B2 (ja) 2020-04-28
TW201624612A (zh) 2016-07-01

Similar Documents

Publication Publication Date Title
TWI673826B (zh) 可流動膜固化穿透深度之改進以及應力調諧
JP5455626B2 (ja) ボトムアップギャップ充填のための誘電堆積プロセスとエッチバックプロセス
CN103477422B (zh) 低温氧化硅转换
US8445075B2 (en) Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US8765573B2 (en) Air gap formation
US10041167B2 (en) Cyclic sequential processes for forming high quality thin films
WO1998008249A1 (en) Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate
CN113707542A (zh) 使用远程等离子体处理使碳化硅膜致密化
CN102754193A (zh) 使用氧化物衬垫的可流动电介质
CN101319312A (zh) 形成无机硅氮烷基电介质膜的方法
KR20150022677A (ko) 유기아미노실란 어닐링을 이용한 SiOCH 막의 형성 방법
CN103154102A (zh) 胺硬化的硅-氮-氢薄膜
CN101416293A (zh) 用于介电膜层的阶梯覆盖与图案加载
KR20140010449A (ko) 손상된 저 k 필름들의 복구 및 기공 밀봉을 위한 자외선 보조형 시릴화
JP2004320005A (ja) 有機シリカ多孔性膜製造のための化学気相成長方法
CN104593747A (zh) 使用含氧前体的介电阻挡层沉积
KR20160003226A (ko) 응력 조절을 위한 저온 유동성 경화
US9312167B1 (en) Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamber
JP2008147644A (ja) ウェットエッチングアンダカットを最小にし且つ超低ｋ（ｋ＜２．５）誘電体をポアシーリングする方法
TWI851635B (zh) 在溝槽上面形成低ｋ可流動介電膜的方法
TW202105513A (zh) 微波輻射後處理介電膜的方法