JP6684191B2 - 基板洗浄装置およびそれを備える基板処理装置 - Google Patents
基板洗浄装置およびそれを備える基板処理装置 Download PDFInfo
- Publication number
- JP6684191B2 JP6684191B2 JP2016172672A JP2016172672A JP6684191B2 JP 6684191 B2 JP6684191 B2 JP 6684191B2 JP 2016172672 A JP2016172672 A JP 2016172672A JP 2016172672 A JP2016172672 A JP 2016172672A JP 6684191 B2 JP6684191 B2 JP 6684191B2
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- substrate
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- 239000000758 substrate Substances 0.000 title claims description 585
- 238000004140 cleaning Methods 0.000 title claims description 540
- 239000007788 liquid Substances 0.000 claims description 114
- 238000005498 polishing Methods 0.000 claims description 108
- 238000000576 coating method Methods 0.000 claims description 80
- 239000011248 coating agent Substances 0.000 claims description 78
- 230000032258 transport Effects 0.000 claims description 52
- 238000001035 drying Methods 0.000 description 46
- 230000002093 peripheral effect Effects 0.000 description 45
- 238000010438 heat treatment Methods 0.000 description 38
- 230000007246 mechanism Effects 0.000 description 35
- 239000000356 contaminant Substances 0.000 description 33
- 239000012530 fluid Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 24
- 239000010408 film Substances 0.000 description 22
- 238000001816 cooling Methods 0.000 description 21
- 239000013256 coordination polymer Substances 0.000 description 20
- 238000005728 strengthening Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 102100030373 HSPB1-associated protein 1 Human genes 0.000 description 6
- 101000843045 Homo sapiens HSPB1-associated protein 1 Proteins 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 6
- 239000013039 cover film Substances 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning In General (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016172672A JP6684191B2 (ja) | 2016-09-05 | 2016-09-05 | 基板洗浄装置およびそれを備える基板処理装置 |
| TW106128549A TWI674153B (zh) | 2016-09-05 | 2017-08-23 | 基板洗淨裝置及具備其之基板處理裝置 |
| US15/691,929 US10331049B2 (en) | 2016-09-05 | 2017-08-31 | Substrate cleaning device and substrate processing apparatus including the same |
| CN201710779419.5A CN107799442B (zh) | 2016-09-05 | 2017-09-01 | 基板清洗装置及具备该基板清洗装置的基板处理装置 |
| KR1020170111729A KR101972226B1 (ko) | 2016-09-05 | 2017-09-01 | 기판 세정 장치 및 그것을 구비하는 기판 처리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016172672A JP6684191B2 (ja) | 2016-09-05 | 2016-09-05 | 基板洗浄装置およびそれを備える基板処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018041754A JP2018041754A (ja) | 2018-03-15 |
| JP2018041754A5 JP2018041754A5 (OSRAM) | 2019-09-12 |
| JP6684191B2 true JP6684191B2 (ja) | 2020-04-22 |
Family
ID=61282178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016172672A Active JP6684191B2 (ja) | 2016-09-05 | 2016-09-05 | 基板洗浄装置およびそれを備える基板処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10331049B2 (OSRAM) |
| JP (1) | JP6684191B2 (OSRAM) |
| KR (1) | KR101972226B1 (OSRAM) |
| CN (1) | CN107799442B (OSRAM) |
| TW (1) | TWI674153B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102081706B1 (ko) * | 2018-07-18 | 2020-02-27 | 세메스 주식회사 | 기판 처리 방법 및 기판 처리 장치 |
| CN111069115A (zh) * | 2018-10-22 | 2020-04-28 | 长鑫存储技术有限公司 | 一种cmp后清洗方法 |
| JP7348021B2 (ja) * | 2019-10-15 | 2023-09-20 | 株式会社荏原製作所 | 基板洗浄装置及び基板洗浄方法 |
| JP2021074825A (ja) * | 2019-11-11 | 2021-05-20 | 株式会社ディスコ | 保持面洗浄装置 |
| CN111341699B (zh) * | 2020-03-09 | 2023-03-31 | 杭州众硅电子科技有限公司 | 一种清洗刷预清洗系统 |
| JP2024106671A (ja) * | 2023-01-27 | 2024-08-08 | 株式会社Screenホールディングス | 基板処理装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW316995B (OSRAM) * | 1995-01-19 | 1997-10-01 | Tokyo Electron Co Ltd | |
| US5927305A (en) * | 1996-02-20 | 1999-07-27 | Pre-Tech Co., Ltd. | Cleaning apparatus |
| JP3756284B2 (ja) | 1997-04-30 | 2006-03-15 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
| DE69835988T2 (de) * | 1997-08-18 | 2007-06-21 | Tokyo Electron Ltd. | Doppelseitenreinigungsmaschine für ein Substrat |
| JP3415435B2 (ja) * | 1998-04-03 | 2003-06-09 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| JP4334758B2 (ja) * | 1999-12-17 | 2009-09-30 | 東京エレクトロン株式会社 | 膜形成装置 |
| US6418584B1 (en) * | 2000-05-24 | 2002-07-16 | Speedfam-Ipec Corporation | Apparatus and process for cleaning a work piece |
| JP3888608B2 (ja) * | 2001-04-25 | 2007-03-07 | 東京エレクトロン株式会社 | 基板両面処理装置 |
| JP2003007664A (ja) * | 2001-06-22 | 2003-01-10 | Ses Co Ltd | 枚葉式基板洗浄方法および枚葉式基板洗浄装置 |
| JP2003243350A (ja) * | 2002-02-14 | 2003-08-29 | Tokyo Electron Ltd | スクラブ洗浄装置におけるブラシクリーニング方法及び処理システム |
| JP2006278392A (ja) * | 2005-03-28 | 2006-10-12 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
| KR100795622B1 (ko) * | 2005-03-30 | 2008-01-17 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
| JP4726752B2 (ja) * | 2005-10-25 | 2011-07-20 | 義治 山本 | 基板洗浄装置 |
| KR100892809B1 (ko) * | 2006-03-30 | 2009-04-10 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리장치 및 기판처리방법 |
| US20070251035A1 (en) * | 2006-05-01 | 2007-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cleaning device |
| JP4796542B2 (ja) * | 2007-05-30 | 2011-10-19 | 株式会社プレテック | 洗浄装置 |
| JP4939376B2 (ja) | 2007-11-13 | 2012-05-23 | 株式会社Sokudo | 基板処理装置 |
| JP5091687B2 (ja) * | 2008-01-08 | 2012-12-05 | 株式会社Sokudo | 基板処理装置 |
| KR101423611B1 (ko) * | 2008-01-16 | 2014-07-30 | 삼성전자주식회사 | 기판 처리 장치, 노광 장치 및 클리닝 툴의 세정 방법 |
| JP2010287686A (ja) * | 2009-06-10 | 2010-12-24 | Tokyo Electron Ltd | 塗布、現像装置及び基板の裏面洗浄方法。 |
| JP5437168B2 (ja) * | 2009-08-07 | 2014-03-12 | 東京エレクトロン株式会社 | 基板の液処理装置および液処理方法 |
| US20120285484A1 (en) * | 2011-05-13 | 2012-11-15 | Li-Chung Liu | Method for cleaning a semiconductor wafer |
| TWI550686B (zh) * | 2011-11-04 | 2016-09-21 | 東京威力科創股份有限公司 | 基板處理系統、基板運送方法及電腦記憶媒體 |
| TWI524456B (zh) * | 2011-11-04 | 2016-03-01 | 東京威力科創股份有限公司 | 基板處理系統、基板運送方法、程式及電腦記憶媒體 |
| JP5637974B2 (ja) * | 2011-11-28 | 2014-12-10 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
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| JP6061484B2 (ja) * | 2012-03-27 | 2017-01-18 | 株式会社Screenセミコンダクターソリューションズ | 基板洗浄装置およびそれを備えた基板処理装置 |
| JP6001896B2 (ja) * | 2012-03-27 | 2016-10-05 | 株式会社Screenセミコンダクターソリューションズ | 基板洗浄装置およびそれを備えた基板処理装置 |
| JP5887227B2 (ja) * | 2012-08-07 | 2016-03-16 | 株式会社荏原製作所 | ドレッサーディスク洗浄用ブラシ、洗浄装置及び洗浄方法 |
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| JP6143589B2 (ja) | 2013-07-12 | 2017-06-07 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6066861B2 (ja) * | 2013-08-05 | 2017-01-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板の裏面洗浄方法及び洗浄機構 |
| KR20150075357A (ko) * | 2013-12-25 | 2015-07-03 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 세정 장치 및 기판 처리 장치 |
| US9700988B2 (en) * | 2014-08-26 | 2017-07-11 | Ebara Corporation | Substrate processing apparatus |
| CN106714987B (zh) * | 2014-09-26 | 2019-04-02 | 盛美半导体设备(上海)有限公司 | 清洗半导体硅片的装置和方法 |
| JP6503194B2 (ja) * | 2015-02-16 | 2019-04-17 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6751634B2 (ja) * | 2016-09-21 | 2020-09-09 | 株式会社Screenホールディングス | 基板処理装置 |
| TWI821887B (zh) * | 2016-11-29 | 2023-11-11 | 日商東京威力科創股份有限公司 | 基板處理裝置、基板處理方法及記錄媒體 |
| JP6885754B2 (ja) * | 2017-03-09 | 2021-06-16 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2016
- 2016-09-05 JP JP2016172672A patent/JP6684191B2/ja active Active
-
2017
- 2017-08-23 TW TW106128549A patent/TWI674153B/zh active
- 2017-08-31 US US15/691,929 patent/US10331049B2/en active Active
- 2017-09-01 KR KR1020170111729A patent/KR101972226B1/ko active Active
- 2017-09-01 CN CN201710779419.5A patent/CN107799442B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101972226B1 (ko) | 2019-04-24 |
| CN107799442B (zh) | 2021-09-14 |
| TWI674153B (zh) | 2019-10-11 |
| US20180067407A1 (en) | 2018-03-08 |
| TW201811453A (zh) | 2018-04-01 |
| US10331049B2 (en) | 2019-06-25 |
| JP2018041754A (ja) | 2018-03-15 |
| CN107799442A (zh) | 2018-03-13 |
| KR20180027357A (ko) | 2018-03-14 |
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