JP6674250B2 - 露光装置、露光方法、および物品の製造方法 - Google Patents

露光装置、露光方法、および物品の製造方法 Download PDF

Info

Publication number
JP6674250B2
JP6674250B2 JP2015245648A JP2015245648A JP6674250B2 JP 6674250 B2 JP6674250 B2 JP 6674250B2 JP 2015245648 A JP2015245648 A JP 2015245648A JP 2015245648 A JP2015245648 A JP 2015245648A JP 6674250 B2 JP6674250 B2 JP 6674250B2
Authority
JP
Japan
Prior art keywords
wavelength
optical system
change
projection optical
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015245648A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017111311A (ja
JP2017111311A5 (enExample
Inventor
善之 永井
善之 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015245648A priority Critical patent/JP6674250B2/ja
Priority to TW105133072A priority patent/TWI656410B/zh
Priority to KR1020160165530A priority patent/KR102130481B1/ko
Priority to CN201611142628.0A priority patent/CN106886131B/zh
Publication of JP2017111311A publication Critical patent/JP2017111311A/ja
Publication of JP2017111311A5 publication Critical patent/JP2017111311A5/ja
Application granted granted Critical
Publication of JP6674250B2 publication Critical patent/JP6674250B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2015245648A 2015-12-16 2015-12-16 露光装置、露光方法、および物品の製造方法 Expired - Fee Related JP6674250B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015245648A JP6674250B2 (ja) 2015-12-16 2015-12-16 露光装置、露光方法、および物品の製造方法
TW105133072A TWI656410B (zh) 2015-12-16 2016-10-13 曝光裝置、曝光方法、及物品的製造方法
KR1020160165530A KR102130481B1 (ko) 2015-12-16 2016-12-07 노광 장치, 노광 방법, 및 물품의 제조 방법
CN201611142628.0A CN106886131B (zh) 2015-12-16 2016-12-13 曝光装置、曝光方法以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015245648A JP6674250B2 (ja) 2015-12-16 2015-12-16 露光装置、露光方法、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2017111311A JP2017111311A (ja) 2017-06-22
JP2017111311A5 JP2017111311A5 (enExample) 2018-12-27
JP6674250B2 true JP6674250B2 (ja) 2020-04-01

Family

ID=59079685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015245648A Expired - Fee Related JP6674250B2 (ja) 2015-12-16 2015-12-16 露光装置、露光方法、および物品の製造方法

Country Status (4)

Country Link
JP (1) JP6674250B2 (enExample)
KR (1) KR102130481B1 (enExample)
CN (1) CN106886131B (enExample)
TW (1) TWI656410B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109240044B (zh) * 2018-10-10 2020-09-18 德淮半导体有限公司 曝光系统及减小曝光过程中掩膜板三维效应的方法
KR102655261B1 (ko) * 2018-10-19 2024-04-08 에이에스엠엘 네델란즈 비.브이. 소스 및 마스크 최적화로 이상적인 소스 스펙트럼들을 생성하는 방법
JP7390804B2 (ja) * 2019-05-17 2023-12-04 キヤノン株式会社 露光装置、露光方法、決定方法および物品製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723405B2 (ja) * 1991-11-12 1998-03-09 松下電器産業株式会社 微細電極の形成方法
JP3259347B2 (ja) * 1992-09-11 2002-02-25 株式会社ニコン 投影露光方法及び装置、並びに半導体素子の製造方法
JPH07220988A (ja) * 1994-01-27 1995-08-18 Canon Inc 投影露光方法及び装置及びこれを用いたデバイス製造方法
JPH1022198A (ja) * 1996-07-04 1998-01-23 Hitachi Ltd 露光方法および光露光装置
JP3080024B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光方法および球面収差量の測定方法
US6096457A (en) * 1998-02-27 2000-08-01 Micron Technology, Inc. Method for optimizing printing of a phase shift mask having a phase shift error
JP4436029B2 (ja) * 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
JP2002329651A (ja) * 2001-04-27 2002-11-15 Nikon Corp 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法
JP2004205874A (ja) * 2002-12-26 2004-07-22 Matsushita Electric Ind Co Ltd マスクおよび半導体装置の製造方法
EP2453465A3 (en) * 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
JP2006080454A (ja) * 2004-09-13 2006-03-23 Renesas Technology Corp パターン形成方法
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
CN100470377C (zh) * 2007-08-22 2009-03-18 中国科学院上海光学精密机械研究所 光刻机投影物镜彗差原位检测系统及检测方法
JP5201979B2 (ja) * 2007-12-26 2013-06-05 キヤノン株式会社 露光装置およびデバイス製造方法
JP5472101B2 (ja) * 2008-04-30 2014-04-16 株式会社ニコン 露光装置及びデバイス製造方法
KR101898921B1 (ko) * 2011-11-16 2018-09-17 삼성디스플레이 주식회사 노광 시스템 이를 이용한 패턴 형성 방법 및 표시 기판의 제조 방법
JP2014135368A (ja) * 2013-01-09 2014-07-24 Canon Inc 露光装置、計測方法及びデバイスの製造方法

Also Published As

Publication number Publication date
JP2017111311A (ja) 2017-06-22
TW201732441A (zh) 2017-09-16
CN106886131B (zh) 2019-05-14
CN106886131A (zh) 2017-06-23
KR20170072128A (ko) 2017-06-26
KR102130481B1 (ko) 2020-07-06
TWI656410B (zh) 2019-04-11

Similar Documents

Publication Publication Date Title
KR100871505B1 (ko) 노광장치 및 방법
US9891525B2 (en) Exposure method, exposure apparatus, and article manufacturing method
US7864294B2 (en) Focus sensitive lithographic apparatus, systems, and methods
JP4898419B2 (ja) 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法
KR101742411B1 (ko) 평가 방법 및 장치, 가공 방법, 및 노광 시스템
JP7054365B2 (ja) 評価方法、露光方法、および物品製造方法
US10684550B2 (en) Exposure apparatus, adjusting method, and article manufacturing method
JP4455129B2 (ja) 収差計測方法及びそれを用いた投影露光装置
JP6674250B2 (ja) 露光装置、露光方法、および物品の製造方法
CN111948910B (zh) 曝光装置、曝光方法、决定方法和物品制造方法
JP7022531B2 (ja) 露光方法、露光装置、および物品の製造方法
KR102568839B1 (ko) 노광장치, 및 물품 제조방법
JP2007294934A (ja) 計測方法及び装置、露光装置及び方法、調整方法、並びに、デバイス製造方法
JPH11297615A (ja) 投影露光装置および該装置を用いた半導体デバイスの製造方法
US11061337B2 (en) Exposure apparatus and article manufacturing method
KR102756371B1 (ko) 노광 장치 및 물품의 제조 방법
JP2017040891A (ja) 評価方法、校正方法、および露光装置
JP4497988B2 (ja) 露光装置及び方法、並びに、波長選択方法
US20230030661A1 (en) Measuring device, measuring method, substrate processing apparatus, and method of manufacturing product
KR20210103948A (ko) 결정방법, 노광장치, 노광방법, 물품의 제조방법 및 기억매체
CN114286966A (zh) 曝光装置以及物品制造方法
JP2007305611A (ja) 露光装置
JP2002353098A (ja) 露光方法及び装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181112

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20181112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190816

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200306

R151 Written notification of patent or utility model registration

Ref document number: 6674250

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

LAPS Cancellation because of no payment of annual fees