JP6671864B2 - 撮像装置の製造方法および撮像装置 - Google Patents

撮像装置の製造方法および撮像装置 Download PDF

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JP6671864B2
JP6671864B2 JP2015101336A JP2015101336A JP6671864B2 JP 6671864 B2 JP6671864 B2 JP 6671864B2 JP 2015101336 A JP2015101336 A JP 2015101336A JP 2015101336 A JP2015101336 A JP 2015101336A JP 6671864 B2 JP6671864 B2 JP 6671864B2
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circuit region
passivation film
semiconductor layer
peripheral circuit
wiring
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Japanese (ja)
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JP2016219551A5 (https=
JP2016219551A (ja
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英明 石野
英明 石野
佐藤　信彦
信彦 佐藤
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Canon Inc
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Canon Inc
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Priority to JP2015101336A priority Critical patent/JP6671864B2/ja
Priority to US15/156,880 priority patent/US9923023B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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JP2015101336A 2015-05-18 2015-05-18 撮像装置の製造方法および撮像装置 Active JP6671864B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015101336A JP6671864B2 (ja) 2015-05-18 2015-05-18 撮像装置の製造方法および撮像装置
US15/156,880 US9923023B2 (en) 2015-05-18 2016-05-17 Image pickup apparatus and method for manufacturing image pickup apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015101336A JP6671864B2 (ja) 2015-05-18 2015-05-18 撮像装置の製造方法および撮像装置

Publications (3)

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JP2016219551A JP2016219551A (ja) 2016-12-22
JP2016219551A5 JP2016219551A5 (https=) 2018-06-14
JP6671864B2 true JP6671864B2 (ja) 2020-03-25

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JP6990997B2 (ja) * 2017-06-06 2022-01-12 株式会社日立製作所 Ｍｅｍｓデバイス
JP6598830B2 (ja) * 2017-08-31 2019-10-30 キヤノン株式会社 光電変換装置の製造方法
JP2020145397A (ja) * 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器
US11244978B2 (en) * 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
JP7128136B2 (ja) * 2019-03-08 2022-08-30 株式会社東芝 接合型電界効果トランジスタ
JP7481811B2 (ja) 2019-07-26 2024-05-13 キヤノン株式会社 半導体装置
US11177159B2 (en) * 2019-11-13 2021-11-16 Micron Technology, Inc. Memory arrays and methods used in forming a memory array comprising strings of memory cells
US12183751B2 (en) * 2021-03-25 2024-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorine passivation in a pixel sensor
CN113363271B (zh) * 2021-05-31 2023-12-22 武汉新芯集成电路制造有限公司 感光阵列及成像设备

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JP2005260177A (ja) 2004-03-15 2005-09-22 Toshiba Corp 半導体装置の製造方法
US8035142B2 (en) 2004-07-08 2011-10-11 Micron Technology, Inc. Deuterated structures for image sensors and methods for forming the same
JP2007141938A (ja) 2005-11-15 2007-06-07 Canon Inc 固体撮像素子及びその製造方法
TWI389250B (zh) 2006-01-18 2013-03-11 Ａｚ電子材料Ｉｐ股份有限公司 矽石質膜之製法及附有由它製造的矽石質膜之基板
JP2009059824A (ja) 2007-08-30 2009-03-19 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
DE102008046030A1 (de) * 2007-09-07 2009-06-10 Dongbu Hitek Co., Ltd. Bildsensor und Verfahren zu seiner Herstellung
JP4457142B2 (ja) * 2007-10-17 2010-04-28 シャープ株式会社 固体撮像素子、カメラモジュールおよび電子情報機器
JP4900228B2 (ja) 2007-12-18 2012-03-21 ソニー株式会社 固体撮像素子の製造方法
KR101476367B1 (ko) * 2008-01-29 2014-12-26 삼성전자주식회사 이미지 센서의 제조 방법
JP2009188068A (ja) * 2008-02-04 2009-08-20 Sharp Corp 固体撮像素子およびその製造方法、電子情報機器
JP2009290089A (ja) 2008-05-30 2009-12-10 Panasonic Corp 固体撮像装置およびその製造方法
JP2009295799A (ja) * 2008-06-05 2009-12-17 Sharp Corp 固体撮像装置の製造方法
JP2010016128A (ja) 2008-07-02 2010-01-21 Canon Inc 固体撮像装置及びその製造方法
JP2010016242A (ja) 2008-07-04 2010-01-21 Canon Inc 光電変換装置、撮像システム、及び光電変換装置の製造方法
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
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JP6278608B2 (ja) * 2013-04-08 2018-02-14 キヤノン株式会社 半導体装置およびその製造方法

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US9923023B2 (en) 2018-03-20
JP2016219551A (ja) 2016-12-22
US20160343761A1 (en) 2016-11-24

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