JP6637948B2 - Ｉｚｏターゲット及びその製造方法 - Google Patents
Ｉｚｏターゲット及びその製造方法 Download PDFInfo
- Publication number
- JP6637948B2 JP6637948B2 JP2017227269A JP2017227269A JP6637948B2 JP 6637948 B2 JP6637948 B2 JP 6637948B2 JP 2017227269 A JP2017227269 A JP 2017227269A JP 2017227269 A JP2017227269 A JP 2017227269A JP 6637948 B2 JP6637948 B2 JP 6637948B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- izo
- present
- izo target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000843 powder Substances 0.000 claims description 86
- 239000002245 particle Substances 0.000 claims description 74
- 229910052760 oxygen Inorganic materials 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 238000005245 sintering Methods 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 17
- 229910052718 tin Inorganic materials 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 6
- 238000004453 electron probe microanalysis Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 47
- 239000011701 zinc Substances 0.000 description 41
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 35
- 238000010298 pulverizing process Methods 0.000 description 24
- 238000002156 mixing Methods 0.000 description 22
- 229910006404 SnO 2 Inorganic materials 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 18
- 238000005477 sputtering target Methods 0.000 description 15
- 239000002994 raw material Substances 0.000 description 13
- 238000000465 moulding Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 description 8
- 238000005469 granulation Methods 0.000 description 8
- 230000003179 granulation Effects 0.000 description 8
- 239000011812 mixed powder Substances 0.000 description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011324 bead Substances 0.000 description 6
- 238000013507 mapping Methods 0.000 description 6
- 238000005211 surface analysis Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002372 labelling Methods 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- 238000007561 laser diffraction method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 101150031287 petH gene Proteins 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017227269A JP6637948B2 (ja) | 2017-11-27 | 2017-11-27 | Ｉｚｏターゲット及びその製造方法 |
| CN201811055653.4A CN109837512B (zh) | 2017-11-27 | 2018-09-11 | Izo靶材及其制造方法 |
| KR1020180108709A KR102164172B1 (ko) | 2017-11-27 | 2018-09-12 | Izo 타깃 및 그 제조 방법 |
| TW107132416A TWI683018B (zh) | 2017-11-27 | 2018-09-14 | Izo靶材及其製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017227269A JP6637948B2 (ja) | 2017-11-27 | 2017-11-27 | Ｉｚｏターゲット及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019094550A JP2019094550A (ja) | 2019-06-20 |
| JP6637948B2 true JP6637948B2 (ja) | 2020-01-29 |
Family
ID=66845055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017227269A Active JP6637948B2 (ja) | 2017-11-27 | 2017-11-27 | Ｉｚｏターゲット及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6637948B2 (zh) |
| KR (1) | KR102164172B1 (zh) |
| CN (1) | CN109837512B (zh) |
| TW (1) | TWI683018B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022255266A1 (ja) * | 2021-06-04 | 2022-12-08 | Ｊｘ金属株式会社 | スパッタリングターゲット及びその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2695605B2 (ja) | 1992-12-15 | 1998-01-14 | 出光興産株式会社 | ターゲットおよびその製造方法 |
| JP2000068456A (ja) | 1998-08-21 | 2000-03-03 | Nec Corp | 半導体装置及び半導体装置の製造方法 |
| JP3721080B2 (ja) * | 1999-05-10 | 2005-11-30 | 株式会社日鉱マテリアルズ | スパッタリングターゲット及びその製造方法 |
| EP1233082B1 (en) * | 1999-11-25 | 2009-01-07 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive oxide, and method for preparing sputtering target |
| CN1869277B (zh) * | 2002-08-02 | 2010-09-29 | 出光兴产株式会社 | 溅射靶、烧结体及利用它们制造的导电膜、有机el元件及其所用的衬底 |
| JP2006249554A (ja) * | 2005-03-14 | 2006-09-21 | Fuji Electric Holdings Co Ltd | スパッタリングターゲット及びその調製方法ならびにスパッタ方法 |
| KR20110093949A (ko) * | 2005-09-20 | 2011-08-18 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 투명 도전막 및 투명 전극 |
| JP5690063B2 (ja) * | 2009-11-18 | 2015-03-25 | 出光興産株式会社 | Ｉｎ−Ｇａ−Ｚｎ系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ |
| JP6082735B2 (ja) * | 2012-05-31 | 2017-02-15 | 出光興産株式会社 | スパッタリングターゲット |
| KR101485305B1 (ko) * | 2012-07-13 | 2015-01-21 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 소결체 및 아모르퍼스막 |
| JP2017014534A (ja) * | 2013-10-09 | 2017-01-19 | 出光興産株式会社 | スパッタリングターゲット及びその製造方法 |
| JP6159867B1 (ja) * | 2016-12-22 | 2017-07-05 | Ｊｘ金属株式会社 | 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 |
-
2017
- 2017-11-27 JP JP2017227269A patent/JP6637948B2/ja active Active
-
2018
- 2018-09-11 CN CN201811055653.4A patent/CN109837512B/zh active Active
- 2018-09-12 KR KR1020180108709A patent/KR102164172B1/ko active IP Right Grant
- 2018-09-14 TW TW107132416A patent/TWI683018B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI683018B (zh) | 2020-01-21 |
| CN109837512A (zh) | 2019-06-04 |
| JP2019094550A (ja) | 2019-06-20 |
| CN109837512B (zh) | 2021-02-12 |
| KR20190062155A (ko) | 2019-06-05 |
| KR102164172B1 (ko) | 2020-10-12 |
| TW201925501A (zh) | 2019-07-01 |
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