JP6635926B2 - 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット - Google Patents

不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット Download PDF

Info

Publication number
JP6635926B2
JP6635926B2 JP2016551168A JP2016551168A JP6635926B2 JP 6635926 B2 JP6635926 B2 JP 6635926B2 JP 2016551168 A JP2016551168 A JP 2016551168A JP 2016551168 A JP2016551168 A JP 2016551168A JP 6635926 B2 JP6635926 B2 JP 6635926B2
Authority
JP
Japan
Prior art keywords
target
elements
contrast
metrology
specific
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016551168A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017508145A (ja
JP2017508145A5 (enExample
Inventor
ヌリエル アミール
ヌリエル アミール
ラヴィヴ ヨハナン
ラヴィヴ ヨハナン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2017508145A publication Critical patent/JP2017508145A/ja
Publication of JP2017508145A5 publication Critical patent/JP2017508145A5/ja
Application granted granted Critical
Publication of JP6635926B2 publication Critical patent/JP6635926B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4785—Standardising light scatter apparatus; Standards therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2016551168A 2014-02-12 2014-09-09 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット Active JP6635926B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461939129P 2014-02-12 2014-02-12
US61/939,129 2014-02-12
PCT/US2014/054811 WO2015122932A1 (en) 2014-02-12 2014-09-09 Metrology targets with filling elements that reduce inaccuracies and maintain contrast

Publications (3)

Publication Number Publication Date
JP2017508145A JP2017508145A (ja) 2017-03-23
JP2017508145A5 JP2017508145A5 (enExample) 2017-10-19
JP6635926B2 true JP6635926B2 (ja) 2020-01-29

Family

ID=53800509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016551168A Active JP6635926B2 (ja) 2014-02-12 2014-09-09 不正確さを低減し且つコントラストを維持する充填要素を有する計測ターゲット

Country Status (5)

Country Link
US (1) US10002806B2 (enExample)
JP (1) JP6635926B2 (enExample)
KR (1) KR102119290B1 (enExample)
CN (1) CN104835754B (enExample)
WO (1) WO2015122932A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102312241B1 (ko) * 2012-11-21 2021-10-13 케이엘에이 코포레이션 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들
US20170146465A1 (en) * 2014-06-19 2017-05-25 Nova Measuring Instruments Ltd. Test structure design for metrology measurements in patterned samples
TWI780741B (zh) * 2016-02-24 2022-10-11 美商克萊譚克公司 光學計量之準確度提升
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
US10754261B2 (en) * 2017-06-06 2020-08-25 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US10837919B2 (en) 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
KR102791110B1 (ko) 2019-11-04 2025-04-07 삼성전자주식회사 반도체 소자 제조 방법
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037671A (en) * 1998-11-03 2000-03-14 Advanced Micro Devices, Inc. Stepper alignment mark structure for maintaining alignment integrity
US6850858B1 (en) * 2001-07-06 2005-02-01 Dupont Photomasks, Inc. Method and apparatus for calibrating a metrology tool
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
KR100871801B1 (ko) * 2005-12-28 2008-12-02 동부일렉트로닉스 주식회사 반도체 소자의 얼라인먼트 키 및 그 형성 방법
KR101096145B1 (ko) * 2007-06-04 2011-12-19 에이에스엠엘 네델란즈 비.브이. 모델-기반 리소그래피 안내 레이아웃 설계를 수행하는 방법들
KR20100079145A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 오버레이 마크의 디싱 방지를 위한 더미 패턴
US8513821B2 (en) * 2010-05-21 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark assistant feature
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR20120025765A (ko) * 2010-09-08 2012-03-16 주식회사 하이닉스반도체 반도체 소자의 오버레이 버니어
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法
CN106965554B (zh) * 2012-01-02 2018-12-21 穆特拉茨国际有限公司 喷墨系统

Also Published As

Publication number Publication date
CN104835754A (zh) 2015-08-12
KR20160118916A (ko) 2016-10-12
KR102119290B1 (ko) 2020-06-05
JP2017508145A (ja) 2017-03-23
WO2015122932A1 (en) 2015-08-20
CN104835754B (zh) 2019-08-02
US20150227675A1 (en) 2015-08-13
US10002806B2 (en) 2018-06-19

Similar Documents

Publication Publication Date Title
KR102119290B1 (ko) 부정확도를 감소시키고 콘트라스트를 유지하는 충전 요소를 갖는 계측 타겟
TWI621190B (zh) 併合成像及散射測量靶
US10274837B2 (en) Metrology target for combined imaging and scatterometry metrology
CN111542784B (zh) 具有倾斜周期性结构的计量目标及方法
TWI598972B (zh) 減少散射量測疊對量測技術中演算法之不準確
TWI648515B (zh) 計量目標及其計量量測、目標設計檔案、計量方法及以電腦為基礎之設備
TWI486801B (zh) 光罩、光罩佈線資料、非暫態之電腦可讀取儲存媒體及用於在一光罩佈線中放置次解析度輔助特徵之方法
JP2017508145A5 (enExample)
KR102009552B1 (ko) Ic 제조 공정의 메트릭을 계산하기 위한 방법
KR20160013920A (ko) 다층 타겟 설계
KR20150143623A (ko) 타겟 설계 및 생산 시의 직접 자기 조립
CN107818983B (zh) 一种标记图形及其形成方法
KR20080032615A (ko) 하드 마스크 재료의 사용, 정렬 마크 및 방법
TWI805877B (zh) 週期性半導體裝置偏移計量學系統及方法
US10698321B2 (en) Process compatible segmented targets and design methods
JP2009217366A (ja) 配線モデルライブラリ構築装置及び構築方法、レイアウトパラメータ抽出装置及び抽出方法
TW201510641A (zh) 使用精細分段製造阻抗層
KR101970685B1 (ko) 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
US20110224945A1 (en) Method of performing etch proximity correction, method of forming photomask layout using the method, computer-readable recording medium storing programmed instructions for executing the method, and mask imaging system
JP6465540B2 (ja) 形成方法及び製造方法
US20160070847A1 (en) Pattern dimension calculation method, simulation apparatus, computer-readable recording medium and method of manufacturing a semiconductor device
US20110262867A1 (en) Method of creating an evaluation map, system, method of manufacturing a semiconductor device and computer program product
JP6667669B2 (ja) 半導体製造装置および半導体製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170908

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170908

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180710

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20181218

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190314

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190516

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190927

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191217

R150 Certificate of patent or registration of utility model

Ref document number: 6635926

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250