CN104835754B - 具有减小不准确性且维持对比度的填充元件的计量目标 - Google Patents

具有减小不准确性且维持对比度的填充元件的计量目标 Download PDF

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Publication number
CN104835754B
CN104835754B CN201410853425.7A CN201410853425A CN104835754B CN 104835754 B CN104835754 B CN 104835754B CN 201410853425 A CN201410853425 A CN 201410853425A CN 104835754 B CN104835754 B CN 104835754B
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CN
China
Prior art keywords
target
metrology
contrast
elements
inaccuracy
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CN201410853425.7A
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English (en)
Chinese (zh)
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CN104835754A (zh
Inventor
努里尔·阿米尔
拉维夫·约哈南
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KLA Corp
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KLA Tencor Corp
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4785—Standardising light scatter apparatus; Standards therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN201410853425.7A 2014-02-12 2014-12-31 具有减小不准确性且维持对比度的填充元件的计量目标 Active CN104835754B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201461939129P 2014-02-12 2014-02-12
US61/939,129 2014-02-12
USPCT/US14/54811 2014-09-09
PCT/US2014/054811 WO2015122932A1 (en) 2014-02-12 2014-09-09 Metrology targets with filling elements that reduce inaccuracies and maintain contrast

Publications (2)

Publication Number Publication Date
CN104835754A CN104835754A (zh) 2015-08-12
CN104835754B true CN104835754B (zh) 2019-08-02

Family

ID=53800509

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410853425.7A Active CN104835754B (zh) 2014-02-12 2014-12-31 具有减小不准确性且维持对比度的填充元件的计量目标

Country Status (5)

Country Link
US (1) US10002806B2 (enExample)
JP (1) JP6635926B2 (enExample)
KR (1) KR102119290B1 (enExample)
CN (1) CN104835754B (enExample)
WO (1) WO2015122932A1 (enExample)

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KR102312241B1 (ko) * 2012-11-21 2021-10-13 케이엘에이 코포레이션 프로세스 호환 세그먼팅된 타겟들 및 설계 방법들
US20170146465A1 (en) * 2014-06-19 2017-05-25 Nova Measuring Instruments Ltd. Test structure design for metrology measurements in patterned samples
TWI780741B (zh) * 2016-02-24 2022-10-11 美商克萊譚克公司 光學計量之準確度提升
US10303839B2 (en) * 2016-06-07 2019-05-28 Kla-Tencor Corporation Electrically relevant placement of metrology targets using design analysis
US10754261B2 (en) * 2017-06-06 2020-08-25 Kla-Tencor Corporation Reticle optimization algorithms and optimal target design
US10795268B2 (en) * 2017-09-29 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for measuring overlay errors using overlay measurement patterns
US10837919B2 (en) 2017-11-06 2020-11-17 Kla Corporation Single cell scatterometry overlay targets
KR102791110B1 (ko) 2019-11-04 2025-04-07 삼성전자주식회사 반도체 소자 제조 방법
US11512948B2 (en) * 2020-05-26 2022-11-29 Kla Corporation Imaging system for buried metrology targets
US11703767B2 (en) 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US11720031B2 (en) 2021-06-28 2023-08-08 Kla Corporation Overlay design for electron beam and scatterometry overlay measurements
US11862524B2 (en) 2021-06-28 2024-01-02 Kla Corporation Overlay mark design for electron beam overlay

Citations (2)

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CN101681093A (zh) * 2007-06-04 2010-03-24 睿初科技公司 用于实施基于模型的光刻引导的布局设计的方法
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

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US6037671A (en) * 1998-11-03 2000-03-14 Advanced Micro Devices, Inc. Stepper alignment mark structure for maintaining alignment integrity
US6850858B1 (en) * 2001-07-06 2005-02-01 Dupont Photomasks, Inc. Method and apparatus for calibrating a metrology tool
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US7687925B2 (en) * 2005-09-07 2010-03-30 Infineon Technologies Ag Alignment marks for polarized light lithography and method for use thereof
KR100871801B1 (ko) * 2005-12-28 2008-12-02 동부일렉트로닉스 주식회사 반도체 소자의 얼라인먼트 키 및 그 형성 방법
KR20100079145A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 오버레이 마크의 디싱 방지를 위한 더미 패턴
US8513821B2 (en) * 2010-05-21 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Overlay mark assistant feature
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
KR20120025765A (ko) * 2010-09-08 2012-03-16 주식회사 하이닉스반도체 반도체 소자의 오버레이 버니어
JP2013120872A (ja) * 2011-12-08 2013-06-17 Toshiba Corp 重ね合わせ計測方法
CN106965554B (zh) * 2012-01-02 2018-12-21 穆特拉茨国际有限公司 喷墨系统

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681093A (zh) * 2007-06-04 2010-03-24 睿初科技公司 用于实施基于模型的光刻引导的布局设计的方法
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Also Published As

Publication number Publication date
CN104835754A (zh) 2015-08-12
KR20160118916A (ko) 2016-10-12
KR102119290B1 (ko) 2020-06-05
JP2017508145A (ja) 2017-03-23
WO2015122932A1 (en) 2015-08-20
JP6635926B2 (ja) 2020-01-29
US20150227675A1 (en) 2015-08-13
US10002806B2 (en) 2018-06-19

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